U62H256
Automotive Fast 32K x 8 SRAM
Features
F
32768 x 8 bit static CMOS RAM
F
35 and 55 ns Access Time
F
Common data inputs and
F
F
Description
The U62H256 is a static RAM
manufactured using a CMOS pro-
cess technology with the following
operating modes:
- Read
- Standby
- Write
- Data Retention
The memory array is based on a
6-Transistor cell.
The circuit is activated by the fal-
ling edge of E. The address and
control inputs open simultaneously.
According to the information of W
and G, the data inputs, or outputs,
are active. In a Read cycle, the
data outputs are activated by the
falling edge of G, afterwards the
data word will be available at the
outputs DQ0-DQ7. After the
address change, the data outputs
go High-Z until the new information
is available. The data outputs have
no preferred state. The Read cycle
is finished by the falling edge of W,
or by the rising edge of E, respec-
tively.
Data retention is guaranteed down
to 2 V. With the exception of E, all
inputs consist of NOR gates, so
that no pull-up/pull-down resistors
are required.
F
F
F
F
F
F
F
F
data outputs
Three-state outputs
Typ. operating supply current
35 ns: 45mA
55 ns: 30mA
Standby current < 50 µA at 125°C
TTL/CMOS-compatible
Power supply voltage 5 V
Operating temperature range
-40 °C to 85 °C
-40 °C to 125 °C
CECC 90000 Quality Standard
ESD protection > 2000 V
(MIL STD 883C M3015.7)
Latch-up immunity >100 mA
Package: SOP28 (300/330 mil)
Pin Configuration
Pin Description
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
VCC
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
Signal Name
A0 - A14
DQ0 - DQ7
E
G
W
VCC
VSS
Signal Description
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
SOP
22
21
20
19
18
17
16
15
Top View
November 01, 2001
1
U62H256
Block Diagram
A6
A7
A8
A9
A10
A11
A12
A13
A14
Row Address
Inputs
Row Decoder
Memory Cell
Array
512 Rows x
64 x 8 Columns
Common Data I/O
A0
A1
A2
A3
A4
A5
Column Address
Inputs
Column Decoder
DQ0
Sense Amplifier/
Write Control Logic
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Address
Change
Detector
Clock
Generator
Truth Table
Operating Mode
Standby/not selected
Internal Read
Read
Write
* H or L
V
CC
V
SS
E
W
G
E
H
L
L
L
W
*
H
H
L
G
*
H
L
*
DQ0 - DQ7
High-Z
High-Z
Data Outputs Low-Z
Data Inputs High-Z
Characteristics
All voltages are referenced to V
SS
= 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of
≤
5 ns, measured between 10 % and 90 % of V
I
, as well as
input levels of V
IL
= 0 V and V
IH
= 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the t
dis
-times and t
en
-times, in which cases transition is measured ±200 mV from steady-state voltage.
Maximum Ratings
a
Power Supply Voltage
Input Voltage
Output Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Output Short-Circuit Current
at V
CC
= 5 V and V
O
= 0 V
c
a
Symbol
V
CC
V
I
V
O
P
D
K-Type
A-Type
T
a
T
stg
| I
OS
|
Min.
-0.5
-0.5
-0.5
-
-40
-40
-65
Max.
7
V
CC
+ 0.5
b
V
CC
+ 0.5
b
1
85
125
150
200
Unit
V
V
V
W
°C
°C
mA
Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress rating
only, and functional operation of the device at condition above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability
b
Maximum voltage is 7 V
c
Not more than 1 output should be shorted at the same time. Duration of the short circuit should not exceed 30 s.
2
November 01, 2001
U62H256
Recommended
Operating Conditions
Power Supply Voltage
Input Low Voltage
d
Symbol
V
CC
V
IL
V
IH
Conditions
Min.
4.5
-0.3
2.2
Max.
5.5
0.8
V
CC
+ 0.3
Unit
V
V
V
Input High Voltage
d
-2 V at Pulse Width 30 ns
Electrical Characteristics
Supply Current - Operating Mode
Symbol
I
CC(OP)
V
CC
V
IL
V
IH
t
cW
t
cW
Conditions
=
=
=
=
=
5.5 V
0.8 V
2.2 V
35 ns
55 ns
Min.
Max.
Unit
90
70
50
mA
mA
µA
Supply Current - Standby Mode
(CMOS level)
Supply Current - Standby Mode
(TTL level)
I
CC(SB)
V
CC
V
E
I
CC(SB)1
V
CC
V
E
K-Type
A-Type
V
OH
V
OL
I
IH
I
IL
I
OH
I
OL
V
CC
I
OH
V
CC
I
OL
V
CC
V
IH
V
CC
V
IL
V
CC
V
OH
V
CC
V
OL
V
CC
V
OH
V
CC
V
OL
= 5.5 V
= V
CC
- 0.2 V
= 5.5 V
= 2.2 V
10
20
= 4.5 V
= -4.0 mA
= 4.5 V
= 8.0 mA
= 5.5 V
= 5.5 V
= 5.5 V
= 0V
=
=
=
=
4.5 V
2.4 V
4.5 V
0.4 V
2.4
0.4
2
-2
-4
8
mA
mA
V
V
µA
µA
mA
mA
Output High Voltage
Output Low Voltage
Input High Leakage Current
Input Low Leakage Current
Output High Current
Output Low Current
Output Leakage Current
High at Three-State Outputs
Low at Three-State Outputs
I
OHZ
I
OLZ
= 5.5 V
= 5.5 V
= 5.5 V
= 0V
2
-2
µA
µA
November 01, 2001
3
U62H256
Switching Characteristics
Read Cycle
Read Cycle Time
Address Access Time to Data Valid
Chip Enable Access Time to Data Valid
G LOW to Data Valid
E HIGH to Output in High-Z
G HIGH to Output in High-Z
E LOW to Output in Low-Z
G LOW to Output in Low-Z
Output Hold Time from Address Change
E LOW to Power-Up Time
E HIGH to Power-Down Time
Symbol
Alt.
t
RC
t
AA
t
ACE
t
OE
t
HZCE
t
HZOE
t
LZCE
t
LZOE
t
OH
t
PU
t
PD
IEC
t
cR
t
a(A)
t
a(E)
t
a(G)
t
dis(E)
t
dis(G)
t
en(E)
t
en(G)
t
v(A)
3
0
3
0
35
Min.
35
Max.
Min.
55
Unit
Max.
35
35
35
15
15
12
55
55
55
25
20
15
3
0
3
0
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Switching Characteristics
Write Cycle
Write Cycle Time
Write Pulse Width
Write Setup Time
Address Setup Time
Address Valid to End of Write
Chip Enable Setup Time
Pulse Width Chip Enable to End of Write
Data Setup Time
Data Hold Time
Address Hold from End of Write
W LOW to Output in High-Z
G HIGH to Output in High-Z
W HIGH to Output in Low-Z
G LOW to Output in Low-Z
Symbol
Alt.
t
WC
t
WP
t
WP
t
AS
t
AW
t
CW
t
CW
t
DS
t
DH
t
AH
t
HZWE
t
HZOE
t
LZWE
t
LZOE
IEC
t
cW
t
w(W)
t
su(W)
t
su(A)
t
su(A-WH)
Min.
35
Max.
Min.
55
Unit
Max.
35
20
20
0
25
25
25
15
0
0
15
12
0
0
55
35
35
0
40
40
40
25
0
0
20
15
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
su(E)
t
w(E)
t
su(D)
t
h(D)
t
h(A)
t
dis(W)
t
dis(G)
t
en(W)
t
en(G)
4
November 01, 2001
U62H256
Data Retention Mode
E - controlled
V
CC
V
CC(DR)
≥
2 V
2.2 V
t
su(DR)
0V
Data Retention
t
rec
2.2 V
E
4.5 V
V
CC(DR)
- 0.2 V
≤
V
E(DR)
≤
V
CC(DR)
+ 0.3 V
Data Retention
Characteristics
Data Retention Supply Voltage
Data Retention Supply Current
Data Retention Setup Time
Operating Recovery Time
Symbol
Conditions
Alt.
IEC
V
CC(DR)
I
CC(DR)
t
CDR
t
R
t
su(DR)
t
rec
V
CC(DR)
= 3 V
V
E
= V
CC(DR)
- 0.2 V
See Data Retention
Waveforms (above)
0
t
cR
2
5.5
30
V
µA
ns
ns
Min.
Typ.
Max.
Unit
Test Configuration for Functional Check
5V
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
V
CC
V
IH
V
IL
Input level according to the
relevant test measurement
Simultaneous measure-
ment of all 8 output pins
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
481
V
O
30 pF
e
E
W
G
255
V
SS
e
In measurement of t
dis(E)
,t
dis(W)
, t
en(E)
, t
en(W)
, t
en(G)
the capacitance is 5 pF.
November 01, 2001
5
