UNISONIC TECHNOLOGIES CO., LTD
UF3808
Preliminary
POWER MOSFET
140A, 75V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UF3808
is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC
UF3808
is suitable for Automotive applications and
Anti-lock Braking System (ABS), etc.
FEATURES
* R
DS(ON)
<8.0mΩ @ V
GS
=10V
* High Switching Speed
* Dynamic dv/dt Rating
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Halogen Free
UF3808G-TA3-T
D: Drain
S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Lead Free
UF3808L-TA3-T
Note: Pin Assignment: G: Gate
UF3808L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TA3: TO-220
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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QW-R205-026.a
UF3808
ABSOLUTE MAXIMUM RATING
Preliminary
POWER MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
75
V
Gate-Source Voltage
V
GSS
±20
V
140
A
Continuous V
GS
=10V, T
C
=25°C
I
D
(Note 6)
Drain Current
V
GS
=10V, T
C
=100°C
97
A
Pulsed (Note 5)
I
DM
550
A
Avalanche Current (Note 5)
I
AR
82
A
Avalanche Energy Single Pulse (Note 3)
E
AS
430
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
5.5
V/ns
Power Dissipation (T
C
=25°C)
330
W
P
D
Linear Derating Factor
2.2
W/°C
Junction Temperature
T
J
-55~+175
°C
Storage Temperature Range
T
STG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3. L=0.13mH, I
AS
=82A, V
DD
=38V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤82A,
di/dt≤310A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
5. Repetitive rating; pulse width limited by max. junction temperature.
6. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATINGS
62
0.45
UNIT
°С/W
°С/W
PARAMETER
Junction to Ambient
Junction to Case
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UF3808
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
=0V, I
D
=250µA
MIN
75
0.086
20
250
200
-200
TYP
MAX UNIT
V
V/°C
µA
µA
nA
nA
∆BV
DSS
/∆T
J
Reference to 25°C, I
D
=1mA
I
DSS
I
GSS
V
DS
=75V, V
GS
=0V
V
DS
=60V, V
GS
=0V, T
J
=150°C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=82A
8.0
mΩ
(Note 1)
Gate Threshold Voltage
V
GS(TH)
V
DS
=10V I
D
=250µA
2.0
4.0
V
Forward Transconductance
g
FS
V
DS
=25V, I
D
=82A
100
S
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
1510
pF
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1.0MHz
780
pF
Reverse Transfer Capacitance
C
RSS
350
pF
SWITCHING PARAMETERS
138 160
nC
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate to Source Charge
Q
GS
41
nC
I
G
=100μA (Note 1)
Gate to Drain ("Miller") Charge
Q
GD
27
nC
Turn-ON Delay Time
t
D(ON)
170
ns
Rise Time
t
R
440
ns
V
DD
=30V, I
D
=1A, R
G
=25Ω
V
GS
=10V (Note 1)
Turn-OFF Delay Time
t
D(OFF)
1000
ns
Fall Time
t
F
480
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
I
S
140
A
Current (Note 1)
Maximum Body-Diode Pulsed Current
I
SM
550
A
(Note 3)
T
J
=25°C, I
S
=82A, V
GS
=0V
1.3
V
Drain-Source Diode Forward Voltage
V
SD
(Note 1)
Body Diode Reverse Recovery Time
ns
t
RR
93
140
T
J
=25°C, I
F
=82A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
Q
RR
340
510
nC
(Note 1)
Notes: 1. Pulse width
≤
400µs; duty cycle
≤
2%.
2. C
OSS
eff. is a fixed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 80%
V
DSS.
3. Repetitive rating; pulse width limited by max. junction temperature.
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QW-R205-026..a
UF3808
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
R
G
I
D
BV
DSS
L
I
AS
E
AS
= 1 LI
AS2
2
BV
DSS
BV
DSS
-V
DD
10V
t
P
DUT
V
DD
V
DD
I
D
(t)
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R205-026..a
UF3808
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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QW-R205-026..a
模拟电子
