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UF3B

3 A, SILICON, RECTIFIER DIODE, DO-214AB

器件类别:半导体    分立半导体   

厂商名称:辰颐电子

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UF3A thru UF3K
SURFACE MOUNT ULTRAFAST
RECTIFIER
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
-50 TO 800 VOLTS
CURRENT
-3.0 Amperes
SMC/DO-214AB
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Ultrafast recovery times for high efficiency
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
Glass passivated junction
High temperature soldering
260
o
C/10 seconds at terminals
.108(2.75)
.128(3.25)
.220(5.59)
.245(6.22)
.260(6.60)
.280(7.11)
.006(.152)
.012(.305)
.079(2.00)
.103(2.62)
.002(.051)
.008(.203)
.305(7.75)
.320(8.13)
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Standard Packaging: 16mm tape (EIA-481)
Weight: 0.007 ounces, 0.21 gram
.030(0.76)
.050(1.27)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, reistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS
UF3A
50
35
50
UF3B
100
70
100
UF3D
200
140
200
3.0
UF3G
400
280
400
UF3J
600
420
600
UF3K
800
560
800
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
at T
L=75 C
0
V
RRM
V
RMS
V
DC
I
(AV)
Peak Forward Surge Current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method)
TA=55 C
0
I
FSM
V
F
I
R
0
100.0
A
Maximum Instantaneous Forward Voltage at 3.0A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TA=25
0
C
@ TA=100 C
0
1.0
10.0
300
50.0
75.0
15
1.4
1.7
V
A
100.0
63
0
Maximum Reverse Recovery Time (Note 1)
TJ=25 C
Typical Junction Capacitance (Note 2)
Maximum Thermal Resistance (Note 3)
Operating and Storage Temperature Range
R
T
RR
C
J
JL
T
J
, T
STG
nS
pF
C/W
0
-50 to +150
C
Notes : 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1.0 MH
Z
and Applied Vr=4.0 volts.
3. 8.0mm
2
(.013mm thick) land areas.
UF3A thru UF3K
SURFACE MOUNT ULTRAFAST
RECTIFIER
CHENG- YI
ELECTRONIC
RATING AND CHARACTERISTICS CURVES
UF3A THRU UF3K
Fig. 2 - MAXIMUM AVERAGE
FORWARD CURRENT RATING
Fig. 1 - REVERSE RECOVERY TIME CHARACTERISTIC
AND TEST CIRCUIT DIAGRAM
50
Noninductive
10
Noninductive
AVERAGE FORWARD CURRENT,
AMPERES
3.0
2.5
2.0
1.5
1.0
0.5
0
50
60
70
80
90 100 110 120 130 140 150
LEAD TEMPERATURE,
o
C
SINGLE PHASE
HALF W AVE
60H
Z
RESISTIVE OR
INDUCTIVE LOAD
P.C.B MOUNTED
ON 0.315x0.315"(8.0x8.0mm)
COPPER PAD AREAS
trr
+0.5A
( )
PULSE
GENERATOR
NOTE 2
(+)
25 Vdc
(approx)
( )
D.U.T.
0
-0.25
1
NON-
Inductive
OSCILLOSCOPE
NOTE 1
(+)
NOTES:1. Rise Time=7ns max.
Input Impedance=1 megohm. 22pF
2. Rise Time=10ns max.
Source Impedance=50 Ohms.
-1.0
SET TIME
BASE FOR
10ns/cm
1cm
Fig. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
100
Fig. 4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT, AMPERES
10.0
0
TJ=150C
10.0
UF3A
thru
UF3D
UF3G
TJ=100C
0
1.0
0
TJ=25C
UF3K
1.0
0.1
0.1
0
TJ=25C
Pulse Width=300 s
2% Duly Cycle
01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, VOLTS
0.01
0.4 0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE. VOLTS
Fig. 5 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
200
Fig. 6 - TYPICAL JUNCTION CAPACITANCE
160
140
CAPACITANCE, pF
0
TJ=25C
f=1MHz
Vslg=50mVp-p
100
120
100
80
60
40
UF3G
thru
UF3K
UF3A thru
UF3D
50
8.3ms SINGLE HALF SINCE-WAVE
JEDEC METHOD
10
1
5
10
50
100
NUMBER OF CYCLES AT 60H
Z
20
.1
.5
1.0 2.0
5.0 10.0 20
50 100 200
500 1000
REVERSE VOLTAGE, VOLTS
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参数对比
与UF3B相近的元器件有:UF3A、UF3D、UF3G、UF3J、UF3K。描述及对比如下:
型号 UF3B UF3A UF3D UF3G UF3J UF3K
描述 3 A, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, SILICON, RECTIFIER DIODE, DO-214AB
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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