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UF4001G

1 A, 50 V, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:重庆平伟实业

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
UF4001G THRU UF4007G
ULTRAFAST RECTIFIER
VOLTAGE:50-1000V
CURRENT:1.0A
FEATURES
·Low
power loss, high efficiency
·Low
leakage
·Low
forward voltage
·High
current capability
·High
speed switching
·High
surge capability
·High
reliability
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
.034(0.9)
.028(0.7)
DIA.
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.33 grams
.107(2.7)
.080(2.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
UF
UF
SYMBOL
4001G 4002G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=50°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at
1.0A DC
Maximum DC Reverse Current at Rated DC
Blocking Voltage T
A
=25°C
Maximum Full Load Reverse Current Full Cycle
Average,.375”(9.5mm) lead length at T
L
=75°C
Maximum Reverse Recovery Time (Note 1)
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
1.0
5.0
I
R
100
t
rr
50
12
nS
pF
µA
50
35
50
100
70
100
UF
4003G
200
140
200
UF
4004G
400
280
400
1.0
30
UF
4005G
600
420
600
UF
4006G
800
560
800
UF
4007G
units
1000
700
1000
V
V
V
A
A
1.7
V
C
J
15
Typical Junction Capacitance (Note 2)
Notes: 1.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0 volts
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参数对比
与UF4001G相近的元器件有:UF4007G、UF4006G、UF4005G、UF4004G、UF4003G、UF4002G。描述及对比如下:
型号 UF4001G UF4007G UF4006G UF4005G UF4004G UF4003G UF4002G
描述 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
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