UNISONIC TECHNOLOGIES CO., LTD
UFR9120
Preliminary
Power MOSFET
P CHANNEL POWER MOSFET
DESCRIPTION
The UTC
UFR9120
is a P-channel power MOSFET using UTC’s
advanced processing technology to provide customers a minimum
on-state resistance and high switching speed
FEATURES
* Fully Avalanche Rated
* High Switching Speed
* extremely Low On-Resistance
* Surface Mount
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UFR9120L-TN3-R
UFR9120G-TN3-R
UFR9120L-TN3-T
UFR9120G-TN3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
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Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R502-570.a
UFR9120
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Preliminary
SYMBOL
V
DSS
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
RATINGS
UNIT
-100
V
±20
V
T
C
=25°C
-6.6
A
Continuous
I
D
Drain Current, V
GS
@-10V
T
C
=100°C
-4.2
A
Pulsed (Note 2)
I
DM
-26
A
Avalanche Current (Note 2)
I
AR
-6.6
A
Single Pulsed (Note 3)
E
AS
100
mJ
Avalanche Energy
4.0
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.0
V/ns
Power Dissipation T
C
=25°C
40
W
P
D
Linear Derating Factor
0.32
W/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; pulse width limited by max. junction temperature.(See Fig.11)
3. Starting T
J
=25°C, L=13mH R
G
=25Ω, I
AS
=-3.9A (See Fig.12)
4. I
SD
≤
-4.0A, di/dt
≤300A/μs,V
DD
≤
V
(BR)DSS
, T
J
≤
25°C
THERMAL DATA
SYMBOL
RATINGS
Junction to Ambient
θ
JA
110
Junction to Case
θ
JC
3.1
Note: 1. For recommended footprint and soldering techniques refer to application note
PARAMETER
UNIT
°C/W
°C/W
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QW-R502-570.a
UFR9120
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
MIN TYP MAX UNIT
-100
-0.11
V
V/°C
-25
µA
-250
+100 nA
-100 nA
-2.0
-4.0
0.48
350
110
70
27
5.0
15
14
47
28
31
-6.6
-26
100
420
-2.0
150
630
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
nC
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=-1mA
I
DSS
I
GSS
V
DS
=-100V, V
GS
=0V
V
DS
=-80V, V
GS
=0V , T
J
=150°C
V
GS
=+20V
V
GS
=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=-10V, I
D
=-3.9A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=-25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=-10V, V
DS
=-80V, I
D
=-4.0A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=-50V, I
D
= -4.0A, R
G
= 12Ω,
R
D
=12Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
MOSFET symbol showing the
Maximum Body-Diode Pulsed
integral reverse p-n junction diode
I
SM
Current (Note 1)
Drain-Source Diode Forward Voltage
V
SD
I
S
=-3.9A, V
GS
=0V, T
J
=25°C
I
F
=-4.0A, V
GS
=0V, di/dt = 100A/µs,
Body Diode Reverse Recovery Time
t
RR
T
J
=25°C (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Width
≤
300μs, Duty Cycle
≤
2%.
2. Essentially independent of operating temperature.
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www.unisonic.com.tw
3 of 6
QW-R502-570.a
UFR9120
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-570.a
UFR9120
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-570.a
FPGA/CPLD
