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UGB8CT/81

Rectifier Diode, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Vishay(威世)
零件包装代码
D2PAK
包装说明
R-PSSO-G2
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE
应用
ULTRA FAST RECOVERY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-263AB
JESD-30 代码
R-PSSO-G2
最大非重复峰值正向电流
150 A
元件数量
1
相数
1
端子数量
2
最大输出电流
8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
150 V
最大反向恢复时间
0.03 µs
表面贴装
YES
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
UG8AT-DT, UGF8AT-DT, UGB8AT-DT
Vishay Semiconductors
formerly General Semiconductor
Ultrafast Rectifier
Reverse Voltage
50 to 200 V
Forward Current
8.0 A
Reverse Recovery Time
20 ns
ITO-220AC (UGF8AT-DT)
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
TO-220AC (UG8AT-DT)
0.415 (10.54) MAX.
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
2
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
CASE
1
0.185 (4.70)
0.175 (4.44)
DIA.
0.055 (1.39)
0.045 (1.14)
0.600 (15.5)
0.580 (14.5)
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
PIN
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.191 (4.85)
0.171 (4.35)
0.060 (1.52)
PIN 1
PIN 2
0.110 (2.80)
0.100 (2.54)
PIN 1
PIN 2
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
TO-263AB (UGB8AT-DT)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.055 (1.40)
0.047 (1.19)
1
K
2
0.624 (15.85)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 2
K - HEATSINK
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout TO-263AB
0.360 (9.14)
0.320 (8.13)
Dimensions in inches
and (millimeters)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High reverse energy capability
• Excellent high temperature switching
• High temperature soldering guaranteed: 250°C/10
seconds at terminals
• Glass passivated chip junction
Mechanical Data
Case:
JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
Document Number 88765
17-Sep-03
www.vishay.com
1
UG8AT-DT, UGF8AT-DT, UGB8AT-DT
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25°C unless otherwise noted)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
ISOL
UG8AT
50
35
50
UG8BT
100
70
100
8.0
150
UG8CT
150
105
150
UG8DT
200
140
200
Unit
V
V
V
A
A
°C
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at T
C
= 100°C
Operating junction and storage temperature range
RMS Isolation voltage (UGF type only) from terminals to
heatsink with t = 1.0 second, RH
30%
–55 to +150
4500
(NOTE 1)
3500
(NOTE 2)
1500
(NOTE 3)
Electrical Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
V
F
UG8AT
UG8BT
1.0
1.2
0.95
10
300
20
30
50
20
45
45
UG8CT
UG8DT
Unit
V
µA
ns
ns
nC
pF
Maximum instantaneous forward voltage at 8.0
20A
5.0A,T
J
= 150°C
(NOTE 4)
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
Maximum reverse recovery time at
I
F
=8.0A, V
R
=30V, di/dt=50A/µs, I
rr
=10% I
RM
Maximum recovered stored charged at
I
F
=8.0A, V
R
=30V, di/dt=50A/µs
Typical junction capacitance at 4.0V, 1MHz
T
J
=25°C
T
J
=100°C
T
J
=25°C
T
J
=100°C
T
J
=25°C
T
J
=100°C
I
R
t
rr
t
rr
Q
rr
C
J
Thermal Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
R
ΘJC
UG8AT
4.0
UGF8AT
5.0
UGB8AT
4.0
Unit
°C/W
Typical thermal resistance from junction to case
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
www.vishay.com
2
Document Number 88765
17-Sep-03
UG8AT-DT, UGF8AT-DT, UGB8AT-DT
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current
Derating Curve
12
1000
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
T
C
= 100°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Rectified Current (A)
Resistive or Inductive Load
10
8.0
6.0
100
4.0
2.0
0
0
25
50
75
100
125
150
175
10
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Instantaneous Reverse Leakage Current
(µA)
100
1,000
Fig. 4 – Typical Reverse
Characteristics
T
J
= 125°C
T
J
= 100°C
Instantaneous Forward Current (A)
100
10
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
10
1
1
T
J
= 25°C
0.1
0.1
0.01
0.4
0.01
0
20
40
60
80
100
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Reverse Switching
Characteristics
60
100
I
F
= 4.0A
V
R
= 30V
50
di/dt = 150A/µs
di/dt = 100A/µs
20A/µs
50A/µs
100A/µs
50A/µs
150A/µs
20
20A/µs
10
trr
Qrr
0
0
25
50
75
100
125
150
175
Fig. 6 – Typical Junction Capacitance
T
J
= 25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
Recovered Store Charge/Reverse
Recovery Time (nC/ns)
40
30
Junction Capacitance (pF)
10
1
0.1
1
10
100
Junction Temperature (°C)
Document Number 88765
17-Sep-03
Reverse Voltage (V)
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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参数对比
与UGB8CT/81相近的元器件有:UGB8CT/31、UGB8AT/31、UGB8DT/81、UGB8DT/31、UGB8BT/31、UGB8BT/81。描述及对比如下:
型号 UGB8CT/81 UGB8CT/31 UGB8AT/31 UGB8DT/81 UGB8DT/31 UGB8BT/31 UGB8BT/81
描述 Rectifier Diode, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
零件包装代码 D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK
包装说明 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
针数 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
应用 ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
外壳连接 CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
最大非重复峰值正向电流 150 A 150 A 150 A 150 A 150 A 150 A 150 A
元件数量 1 1 1 1 1 1 1
相数 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
最大输出电流 8 A 8 A 8 A 8 A 8 A 8 A 8 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 150 V 150 V 50 V 200 V 200 V 100 V 100 V
最大反向恢复时间 0.03 µs 0.03 µs 0.03 µs 0.03 µs 0.03 µs 0.03 µs 0.03 µs
表面贴装 YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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