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UGF18DCT

18 A, 200 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
Reach Compliance Code
unknow
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.2 V
JESD-609代码
e0
最大非重复峰值正向电流
175 A
最高工作温度
150 °C
最大输出电流
18 A
最大重复峰值反向电压
200 V
最大反向恢复时间
0.03 µs
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
Base Number Matches
1
文档预览
UG18xCT, UGF18xCT, UGB18xCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Plastic Rectifier
TO-220AB
ITO-220AB
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
2
UG18xCT Series
PIN 1
PIN 3
PIN 2
CASE
3
1
UGF18xCT Series
PIN 1
PIN 3
PIN 2
2
3
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max., 10 s per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
(for ITO-220AB and TO-263AB package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
D
2
PAK (TO-263AB)
K
2
1
UGB18xCT Series
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, DC/DC converters,
and other power switching application.
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Circuit configuration
18 A
50 V to 200 V
175A
20 ns
0.95 V
150 °C
TO-220AB, ITO-220AB, D
2
PAK (TO-263AB)
Common cathode
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
Max. RMS voltage
Max. DC blocking voltage
Max. average forward rectified current at T
C
= 105 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
AC
UG18ACT
50
35
50
UG18BCT
100
70
100
18
175
-65 to +150
1500
UG18CCT
150
105
150
UG18DCT
200
140
200
UNIT
V
V
V
A
A
°C
V
Revision: 03-Jul-2018
Document Number: 88759
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
UG18xCT, UGF18xCT, UGB18xCT
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT
1.1
T
J
= 100 °C
T
A
= 25 °C
T
A
= 100 °C
V
F
I
R
1.2
0.95
10
300
t
rr
t
rr
20
30
50
20
Q
rr
C
J
45
30
nC
pF
ns
μA
ns
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
9.0 A
Max. instantaneous forward
voltage per diode
(1)
Max. DC reverse current at
rated DC blocking voltage
per diode
Max. reverse recovery time
per diode
Max. reverse recovery time
per diode
Max. stored charge per diode
Typical junction capacitance
per diode
20 A
5.0 A
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
I
F
= 9.0 A, V
R
= 30 V,
dI/dt = 50 A/μs,
I
rr
= 10 % I
RM
I
F
= 9.0 A, V
R
= 30 V,
dI/dt = 50 A/μs,
I
rr
= 10 % I
RM
at 4.0 V, 1 MHz
T
J
= 25 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 100 °C
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case per diode
SYMBOL
R
JC
UG18
4.0
UGF18
6.0
UGB18
4.0
UNIT
°C/W
ORDERING INFORMATION (EXAMPLE)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
ITO-220AB
TO-263AB
TO-263AB
(1)
PREFERRED P/N
UG18DCT-E3/45
UGF18DCT-E3/45
UGB18DCT-E3/45
UGB18DCT-E3/81
UGF18DCTHE3/45
(1)
UGB18DCTHE3/45
(1)
UGB18DCTHE3/81
(1)
UNIT WEIGHT (g)
1.85
2.00
1.35
1.35
2.00
1.35
1.35
PACKAGE CODE
45
45
45
81
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tape and reel
Note
AEC-Q101 qualified, available in ITO-220AB and TO-263AB package
Revision: 03-Jul-2018
Document Number: 88759
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
UG18xCT, UGF18xCT, UGB18xCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
1000
Instantaneous Reverse Leakage
Current (µA)
Average Forward Current (A)
T
J
= 125 °C
100
T
J
= 100 °C
16
10
12
1
T
J
= 25 °C
0.1
8
4
0
0
25
50
75
100
125
150
175
0.01
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Stored Charge/Reverse Recovery Time
(nC/ns)
1000
60
I
F
= 9.0 A
V
R
= 30 V
dI/dt =
40
150 A/µs
100 A/µs
20 A/µs
50 A/µs
100 A/µs
50 A/µs
150 A/µs
Peak Forward Surge Current (A)
T
C
= 105 °C
8.3 ms Single Half Sine-Wave
50
100
30
20
20 A/µs
10
t
rr
Q
rr
0
25
50
75
100
125
150
175
10
1
10
100
0
Number
of Cycles at 60 Hz
Junction Temperature (°C)
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode
Fig. 5 - Reverse Switching Characteristics Per Diode
100
100
T
J
= 125 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Junction Capacitance (pF)
1
10
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 03-Jul-2018
Document Number: 88759
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
UG18xCT, UGF18xCT, UGB18xCT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
0.415 (10.54) max.
0.370 (9.40)
0.360 (9.14)
Vishay General Semiconductor
TO-220AB
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2 3
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
1
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
PIN
2
3
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) min.
0.33 (8.38) min.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 03-Jul-2018
Document Number: 88759
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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