UH20FCT-E3, UHB20FCT-E3
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Recovery Rectifier
FEATURES
• Power pack
TO-220AB
TO-263AB
K
• Oxide planar chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
2
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
2
UH20FCT
PIN 1
PIN 3
PIN 2
CASE
3
UHB20FCT
PIN 1
PIN 2
1
1
K
HEATSINK
• Solder bath temperature 275 °C maximum,
JESD 22-B106 (for TO-220AB package)
10 s per
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
at I
F
T
J
max.
Package
Diode variations
2 x 10 A
300 V
180 A
25 ns
0.83 V
175 °C
TO-220AB, TO-263AB
Common cathode
For use in high frequency power factor correctors, switching
mode power supplies, freewheeling diodes and secondary
DC/DC rectification application.
MECHANICAL DATA
Case:
TO-220AB and TO-263AB
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
Max. average forward rectified
current (see Fig.1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
UH20FCT
300
20
10
180
- 55 to + 175
UHB20FCT
UNIT
V
A
A
°C
Revision: 15-Aug-13
Document Number: 88964
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
UH20FCT-E3, UHB20FCT-E3
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 5.0 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
R
t
rr
t
rr
S
I
RM
Q
rr
t
fr
V
F
I
F
= 5.0 A
I
F
= 10 A
I
F
= 10 A
SYMBOL
TYP.
0.96
0.77
1.0
0.83
0.5
25
20
28
0.36
7.0
160
150
MAX.
-
-
1.2
0.90
5
150
25
35
-
-
-
-
μA
ns
ns
-
A
nC
ns
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. instantaneous forward voltage per diode
(1)
Max. reverse current per diode
(2)
Max. reverse recovery time
Max. reverse recovery time per diode
Typical softness factor (t
b
/t
a
)
Typical reverse recovery current
Typical stored charge
Typical forward recovery time per diode
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
V
R
= 300 V
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
I
F
= 1.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
I
F
= 10 A, dI/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
per diode
I
F
= 10 A, dI/dt = 80 A/μs,
V
FR
= 1.1 x V
F max.
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JC
UH20FCT
2.0
UHB20FCT
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UH20FCT-E3/4W
UHB20FCT-E3/4W
UHB20FCT-E3/8W
UNIT WEIGHT (g)
1.88
1.38
1.38
PACKAGE CODE
4W
4W
8W
BASE QUANTITY
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tape and reel
Revision: 15-Aug-13
Document Number: 88964
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
UH20FCT-E3, UHB20FCT-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
24
100
Average Forward Rectified Current (A)
20
Instantaneous Forward Current (A)
T
J
= 125 °C
10
T
J
= 175 °C
T
J
= 25 °C
1
16
12
8
4
0
0
25
50
75
100
125
150
175
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode
12
11
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
1000
Average Power Loss (W)
10
9
8
7
6
5
4
3
2
1
0
0
2
4
Instantaneous Reverse Current (µA)
D = 0.8
100
T
J
= 175 °C
T
J
= 125 °C
10
1
T
0.1
T
J
= 25 °C
0.01
D = t
p
/T
6
8
t
p
10
12
0.001
10
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Reverse Leakage Characteristics Per Diode
200
1000
Peak Forward Surge Current (A)
180
160
140
120
100
80
60
40
20
1
T
J
= T
J
Max.
10 ms Single Half Sine-Wave
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
10
10
100
1
0.1
1
10
100
Number
of Cycles
Reverse Voltage (V)
Fig. 3 - Max. Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 15-Aug-13
Document Number: 88964
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
UH20FCT-E3, UHB20FCT-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.33 (8.38) MIN.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 15-Aug-13
Document Number: 88964
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
