UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
DESCRIPTION
UM2100 Series PIN diodes are designed for
transmit/receive switch and attenuator
applications in HF band (2-30MHz) and
below. As series configured switches, these
long lifetime (25µs typical) diodes can
control up to 2.5 kW, CW in a 50 ohm
system. In HF band, insertion loss is less
than 0.25dB and isolation is greater than
32dB (off-state).
The UM2100 series offers the lowest
distortion performance in both the transmit
and receive modes. Less than 50 mA
forward bias is requires to obtain an IP3 of
60 dBm at 300 kHz with 1 watt per tone. The
forward biased resistance/reactance vs. frequency
characteristics are flat down to 10 kHz. The
capacitance vs. reverse bias voltage characteristic
is flat down to 2 MHz.
In attenuator configuration, the UM2100
produces extremely low distortion at low values
of attenuator control current, and very low
insertion loss (0.2dB) in the “0dB” attenuator
state.
KEY FEATURES
WWW .
Microsemi
.C
OM
HF band (2-30 MHz) PIN
Long Lifetime (25µs typical)
High Power ( 1kW, CW)
High Isolation (32dB)
Low Loss (0.25dB)
Very Low Distortion (IP3=60dBm)
Voltage ratings to 1000 V
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
A
O
Condition
25 C Pin Temperature
PD
25 W
12 W
2.5 W
25 W
18.75 W
15W
O
θ
6 C/W
12.5
O
C/W
6
O
C/W
8
O
C/W
10
O
C/W
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX2101B, etc.
B & E
½ in. total length to 25
O
C Contact
Free Air
O
C
25 C Stud Temperature
D
SM
All
O
25 C Stud Temperature
O
25 C End Cap Temperature
1 us pulse (Single)
OPERATING AND STORAGE
TEMPERATURE RANGE
100 kW
-65
O
C to + 175
O
C
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100V
200V
400V
600V
800V
1000V
UM2101
UM2102
UM2104
UM2106
UM2108
UM2110
UM2100
UM2100
Copyright
2005
Rev. 0, 2005-12-13
Microsemi
Page 1
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
WWW .
Microsemi
.C
OM
Parameter
Total Capacitance
Series Resistance
Carrier Lifetime
Reverse Current
Symbol
CT
R
S
τ
I
R
IP3
Conditions
V
R
=100V, F= 1 MHz
If = 100 mA, F= 2 MHz
I
F
= 10 mA/100 V
V
R
= Voltage rating
P=2W total, I
F
=25mA
F1 = 1.999 MHz
F2 = 2.001 MHz
1.0 W/tone
MIN.
TYPICAL
1.9
1.0
25
60
MAX.
2.5
2.0
10
Units
pF
Ohms
µs
µA
dBm
20
50
Style “B”
Style “SM”
DC curent
r
s y
*
uppl
SI
GNAL
GENERAT
OR
*
POWER
SPLT ER
IT
f
1
RFC
SPECT
RUM
ANALYZER
*
ELECTRICALS
ELECTRICALS
SI
GNAL
GENERAT
OR
f
2
*
RFC
*
May be controlled with the IEEE-488 BUS CIRCUIT
Copyright
2005
Rev. 0, 2005-12-13
Microsemi
Page 2
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
WWW .
Microsemi
.C
OM
Rs versus If
TYPICAL
102
f = 2 MHz
10
1
Rs (Ohms)
100
10-1
10-1
100
101
102
If (mA)
RESISTANCE / REACTANCE VERSUS FREQUENCY
TYPICAL
2.0
RESISTANCE / REACTANCE (Ohms)
If = 100 mA
1.5
RESISTANCE
1.0
ELECTRICALS
ELECTRICALS
0.5
REACTANCE
0.0
-0.5
10
2
10
3
10
4
10
5
10
6
10
7
FREQUENCY (Hz)
Copyright
2005
Rev. 0, 2005-12-13
Microsemi
Page 3
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
WWW .
Microsemi
.C
OM
POWER LEVEL/TONE VERSUS FORWARD BIAS CURRENT
TYPICAL
40
F1 = F - 1 KHz
F2 = F + 1 KHz
35
65
70
POWER LEVEL/TONE [dBm]
30
60
25
55
20
50
15
100
101
102
45
If NEEDED TO OBTAIN AN IM3 OF -60 dBc [mA]
CAPACITANCE VERSUS VOLTAGE
TYPICAL
20
10 KHz
18
16
100 KHz
CAPACITANCE (pF)
14
200 KHz
12
IP3 [dBm]
2 MHz
1 MHz
500 KHz250 KHz
150 KHz
ELECTRICALS
ELECTRICALS
10
8
6
4
2
0
10-1
400 KHz
1 MHz
2 MHz
4 MHz
10 MHz
100
101
102
Vr (V)
Copyright
2005
Rev. 0, 2005-12-13
Microsemi
Page 4
UM2100
ATTENUATOR AND POWER PIN DIODES (2-30 MHz)
WWW .
Microsemi
.C
OM
MEAN If VERSUS Vf CURVE VERSUS TEMPERATURE
TYPICAL
101
0
10
10-1
10-2
10-3
10-4
10-5
10-6
150C------------
---------------125C
If (A)
---------------100C
--------------75C
-----25C
0.0
0.5
1.0
1.5
Vf (V)
ELECTRICALS
ELECTRICALS
ELECTRICALS
ELECTRICALS
Copyright
2005
Rev. 0, 2005-12-13
Microsemi
Page 5
FPGA/CPLD
