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UM2310S

Pin Diode, Silicon,

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
Objectid
1957259295
Reach Compliance Code
unknown
ECCN代码
EAR99
应用
ATTENUATOR; SWITCHING
外壳连接
ANODE
配置
SINGLE
最大二极管电容
20 pF
二极管元件材料
SILICON
最大二极管正向电阻
0.4 Ω
二极管类型
PIN DIODE
频带
MEDIUM FREQUENCY
JESD-30 代码
S-XUPM-G1
JESD-609代码
e0
少数载流子标称寿命
80 µs
元件数量
1
端子数量
1
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
POST/STUD MOUNT
认证状态
Not Qualified
表面贴装
YES
技术
POSITIVE-INTRINSIC-NEGATIVE
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
UPPER
文档预览
580 Pleasant St.
Watertown, MA 02472
PH: (617) 926-0404
FAX: (617) 924-1235
UM2300
SERIES
Features
LF band (100 KHz) PIN
Long Lifetime (80
µs
typ.)
High Power (1 KW CW)
High Isolation (35 dB)
Low Loss (0.2 dB)
Very Low Distortion (IP3 = > 60 dBm)
Voltage Ratings to 1000 V
PIN DIODE
SWITCH
Description
TYPICAL CAPACITANCE vs REVERSE VOLTAGE
UM2300 Series PIN diodes are designed for transmit /
receive switch and attenuator application in LF band
( 100 KHz ) and above. As series configured switches,
these long lifetime (80
µS
typ) diodes can control up to
2.5 KW CW in a 50 ohm system. In MF band, insertion
loss is less than 0.2 dB and isolation is greater than
35 dB (‘ ’
off state).
The UM2300 series offers the lowest distortion perform-
ance in both transmit & receive modes. Less than 10
mA forward bias is required to obtain an IP3 of 60 dBm
at 150 KHz with 1 watt per tone. The forward biased
resistance/reactance vs. frequency characteristics are
flat down to 10 KHz. Capacitance vs. reverse bias volt-
age characteristic is flat down to 1 MHz.
In attenuator configurations, the UM2300 produces
extremely low distortion at low values of attenuator
control current, & very low insertion loss ( 0.2 dB) in
the ‘0 dB ’attenuator state.
130
120
110
100
90
200 KHz
100 KHz
Ct (pF)
80
70
60
50
40
30
20
10
0
0
4 MHz
1 MHz
400 KHz
2 MHz
20
40
60
80
100
120
140
160
180
200
Vr (VOLTS)
Voltage Ratings (25°
C)
Reverse Voltage ( V
R
)
@ I
R
= 10
µA
100
200
400
600
800
1000
Max.
0.4
20
10
Units
pF
µA
µs
dBm
DEVICE
Electrical Specifications (25°
C)
Test
Diode Resistance R
S
Capacitance C
T
Reverse Current I
R
Carrier Lifetime
τ
IP3
Min.
Typ.
0.3
15
80
60
VOLTS............ UM2301
VOLTS............ UM2302
VOLTS............ UM2304
VOLTS............ UM2306
VOLTS............ UM2308
VOLTS............ UM2310
Conditions
F
1
= 1 MHz, 100 mA
F
2
= 1 MHz, 100 V
@ Rated Voltage
I
f
= 10 mA / 100 V
2 WATT total, I
f
= 25 mA
F
1
= 0.999 MHz, F
2
= 1.001 MHz
1.0 WATT/ tone
25° Stud Temperature
C
60
50
Thermal Resistance
1.0
°
/W
C
MSCOXXXA 12-14-98
DSW UM2300 <->(34989)
UM2300
SERIES
TYPICAL I-V CURVE
10
2
10
-2
TYPICAL IR vs VR
150 oC
101
10
0
150 oC
125 oC
100 oC
75 oC
50 oC
25 oC
10
-3
125 oC
100 oC
If [AMPERES]
10
IR (A) (MEAN)
-1
10
-4
75 oC
50 oC
10-2
10
-3
10
-5
25 oC
-6
10
10-4
10
-5
10
-7
10-6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
10
-8
0
100 200 300 400 500 600 700 800 900 1000
VR (Volts)
Vf [VOLTS]
TYPICAL RS vs FORWARD BIAS CURRENT
1000
TYPICAL Rp vs REVERSE VOLTAGE
9
10
108
10KHz
20KHz
40KHz
107
100KHz
200KHz
6
10
5
10
400KHz
1MHz
2MHz
4MHz
10MHz
100
Rs (Ohms)
10
1
Rp (OHMS)
.01
.1
1
If (mA)
10
100
104
.1
103
0
10
1
10
REVERSE VOLTAGE (VOLTS)
2
10
MSCOXXXA 12-14-98
DSW UM2300 <->(34989)
UM2300
SERIES
TYPICAL THERMAL IMPEDANCE
10
0.0
TYPICAL TCVf vs If
THERMAL IMPEDANCE - (C/W)
-0.5
DELTA
125 oC
No Heatsink
TCVf [mV/oC]
1
-1.0
-1.5
With Heatsink
.1
-2.0
-2.5
.01
1
10
100
Pt - PULSE TIME - (ms)
1000
-3.0
-3
10
-2
10
-1
10
If [AMPERES]
0
10
1
10
TYPICAL POWER LEVEL vs FORWARD BIAS CURRENT
40
f1 = F +/- 1 KHz
f2 = F +/- 1 KHz
POWER LEVEL/TONE (dBm)
35
500KHz 250KHz 150KHz
70
65
25
55
20
50
TAU = 0.1 ms
15
1
2
3
4
5
6
7 8
10
45
If NEEDED TO OBTAIN AN IM3 OF - 60 dBc (mA)
MSCOXXXA 12-14-98
IP3 (dBm)
30
60
DSW UM2300 <->(34989)
UM2300
SERIES
UM2300
MSCOXXXA 12-14-98
DSW UM2300 <->(34989)
UM2300
SERIES
UM2300S
MSCOXXXA 12-14-98
DSW UM2300 <->(34989)
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