UM4000 / UM4900
HIGH POWER PIN DIODES
DESCRIPTION
The UM4000 and UM4900 series features
high power PIN diodes with long carrier
lifetimes and thick I-regions. They are
especially suitable for use in low distortion
switches and attenuators, in HF through S
band frequencies. While both series are
electrically equivalent, the UM4900 series
have higher power ratings due to a shorter
thermal path between the chip and package.
High charge storage and long carrier
lifetime enable high RF levels to be
controlled with relatively low bias current.
Similarly, peak RF voltages can be handled
well in excess of applied reverse bias voltage.
Both series have been fully qualified in high
power UHF phase shifters and megawatt peak-
power duplexers, accumulating thousands of
hours of proven performance. Both types have
been used in the design of antenna selectors and
couplers, where inductance and capacitance
elements are switched in and out of filter or
cavity networks.
KEY FEATURES
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Microsemi
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OM
Voltage ratings to 1000 V
Power dissipation to 37.5 W
Series resistance rated at 0.5
Ω
Carrier lifetime greater than 5 µs
Non cavity design
Thermally matched configuration
Low capacitance at 0 V bias
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
A
Condition
O
25 C Pin Temperature
Low conductance at 0 V bias
Compatible with automatic
insertion equipment
UM4000
PD
θ
25 W
UM4900
PD
θ
4
O
C/W
6
O
C/W 37.5 W
B & E
½ in. total length to 25
O
C Contact
Free Air
O
C
25 C Stud Temperature
D
SM
All
25 C Stud Temperature
25
O
C End Cap Temperature
1 us pulse (Single)
O
12 W 12.5
O
C/W 12 W 12.5
O
C/W
2.5 W
2.5 W
O
25 W
6 C/W 37.5 W
4
O
C/W
18.75 W
20 W
8 C/W
7
O
C/W
O
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
25 W
6 C/W
N/A
O
100 kW
100 kW
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100
200
400
600
1000
UM4000
UM4001
UM4002
-
UM4006
UM4010
UM4900
UM4901
UM4902
-
UM4906
-
UM4000/UM49000
UM4000/UM49000
Style “B”
Style “SM”
Copyright
2005
Rev. 0, 2005-07-14
Microsemi
Page 1
UM4000 / UM4900
HIGH POWER PIN DIODES
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
WWW .
Microsemi
.C
OM
Parameter
Forward Voltage
Symbol
V
F
Conditions
I
F
= 100 mA
At rated voltage
If = 100 mA, F= 100 MHz
V
R
= 100 V, F = 1 MH
Z
V
R
= 100 V, F = 100 MHz
I
F
= 10 mA
Min
Typ.
Max
1.0
10
Units
V
u
A
Ohm
pF
Ohms
us
Reverse Current
I
R
Series Resistance
Capacitance
Parallel Resistance
Carrier Lifetime
R
S
C
T
R
P
0.3
2.4
10k
5
15k
10
0.5
3
τ
UM4000/UM4900
TYPICAL
12
11
10
1 MHz
CAPACITANCE (pF)
9
8
7
5 MHz
ELECTRICALS
ELECTRICALS
6
5
10 MHz
4
3
2
1
10
100
200
=>100 MHz
Vr (VOLTS)
Copyright
2005
Rev. 0, 2005-07-14
Microsemi
Page 2
UM4000 / UM4900
HIGH POWER PIN DIODES
F = 100 MHz
UM4000/UM4900
TYPICAL
4
10
WWW .
Microsemi
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OM
103
102
Rs (Ohms)
1
10
100
10-1
-2
10
10-6
10-5
10-4
10-3
10-2
10-1
100
If (A)
UM4000/UM4900
TYPICAL
103
1 MHz
10 MHz
Rp (KOhms)
102
100 MHz
500 MHz
1 GHz
101
3 GHz
ELECTRICALS
ELECTRICALS
100
100
101
102
103
Vr (V)
Copyright
2005
Rev. 0, 2005-07-14
Microsemi
Page 3
UM4000 / UM4900
HIGH POWER PIN DIODES
WWW .
Microsemi
.C
OM
ELECTRICALS
ELECTRICALS
Copyright
2005
Rev. 0, 2005-07-14
Microsemi
Page 4
UM4000 / UM4900
HIGH POWER PIN DIODES
WWW .
Microsemi
.C
OM
ELECTRICALS
ELECTRICALS
Copyright
2005
Rev. 0, 2005-07-14
Microsemi
Page 5
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