UM6000 / UM6200/UM6600
POWER PIN DIODES
DESCRIPTION
These series of PIN diodes are designed for
applications requiring small package size
and moderate average power handling
capability. The low capacitance of the
UM6000 and UM6600 allows them to be
used as series switching elements to 1 GHz.
The low resistance of the UM6200 is useful
in applications where forward bias current
must be minimized.
Because of its thick I-region width and long
lifetime the UM6000 and UM6600 have
been used in distortion sensitive and high
peak power applications, including receiver
protectors, TACN, and IFF equipment.
Their low capacitance allows them to be
useful as attenuator diodes at frequencies
greater than 1 GHz. The UM6200 has been
used successfully in switches in which low
insertion loss at low bias current is required.
The “A” style package for this series is the
smallest Microsemi PIN diode package. It has
been used successfully in many microwave
applications using coaxial, microstrip, and
stripline techniques at frequencies beyond X-
Band. The “B” and “E” style leaded packages
offer the highest available power dissipation for a
package this small. They have been used
extensively as series switch elements in
microstrip circuits. The “C” style package
duplicates the physical outline available in
conventional ceramic-metal packages but
incorporates the many reliability advantages of
the Microsemi construction.
KEY FEATURES
WWW .
Microsemi
.C
OM
Voltage ratings to 1000V
Average power dissipation to 6 W
Series resistance as low as 0.4
Ω
Carrier lifetime greater than 1.0 µs
Non cavity design
Thermally matched configuration
Low capacitance at 0 V bias
Low conductance at 0 V bias
Compatible with automatic insertion
equipment
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
Condition
UM6000/UM6600
PD
A & C
25
O
C Pin Temperature
6W
θ
25
O
C/W
PD
UM6200
θ
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX6001B, etc.
4 W 37.5
o
C/W
2.0 W 75
o
C/W
0.5 W
3.0 W 42.5
o
C/W
10 kW
B & E
½ in. total length to 25
O
C Contact 2.5 W
60
O
C/W
Free Air
0.5 W
O
SM
25 C End Cap Temperature
4.5 W
27.5
O
C/W
All
1 us pulse (Single)
UM6000 25 kW
UM6600 13 kW
UM6000/UM62000/UM6600
UM6000/UM62000/UM6600
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100
200
400
800
1000
UM6001
UM6002
-
UM6006
UM6010
UM6201
UM6202
UM6204
-
-
UM6601
UM6602
-
UM6606
UM6610
Copyright
2005
Rev. 0, 2006-03-13
Microsemi
Page 1
UM6000 / UM6200/UM6600
POWER PIN DIODES
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
WWW .
Microsemi
.C
OM
Parameter
Reverse Current (Max)
Series Resistance(Max)
Capacitance (Max)
Parallel Resistance(Min)
Carrier Lifetime(Min)
I-Region Width (Min)
Symbol
I
R
R
S
C
T
Rp
Conditions
At rated voltage
If = 100 mA, F= 100 MHz
V
R
= 100 V, F = 1 MH
Z
V
R
= 100 V, F = 100 MHz
I
F
= 10 mA
-
UM6600
10
2.5
0.4
300k
1.0
150
UM6000
10
1.7
0.5
300k
1.0
150
UM6200
10
0.4
1.1
350k
0.6
40
Units
u
A
Ohms
pF
Ohms
us
um
τ
W
Style “B”
Style “SM”
UM6000/UM6200/UM6600
Rs versus If
f = 100 MHz
105
10
4
103
Rs (Ohms)
UM6600
102
UM6000
10
1
UM6200
ELECTRICALS
ELECTRICALS
10
0
10-1
10-6
10-5
10-4
10-3
10-2
10-1
100
If (A)
Copyright
2005
Rev. 0, 2006-03-13
Microsemi
Page 2
UM6000 / UM6200/UM6600
POWER PIN DIODES
WWW .
Microsemi
.C
OM
UM6000/UM6200/UM6600
FORWARD VOLTAGE versus CURRENT
100
FORWARD CURRENT (A)
10-1
UM6200
10-2
UM6000
UM6600
10
-3
10
-4
10-5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE
UM6000/UM6600
Rp versus Vr
103
f = 100 MHz
Rp (kOhms)
102
f = 500 MHz
ELECTRICALS
ELECTRICALS
f = 1 GHz
f = 3 GHz
101
10
0
10
0
10
1
10
2
10
3
Vr (Volts)
Copyright
2005
Rev. 0, 2006-03-13
Microsemi
Page 3
UM6000 / UM6200/UM6600
POWER PIN DIODES
WWW .
Microsemi
.C
OM
UM6200
Rp versus Vr
10
3
f = 100 MHz
Rp (kOhms)
102
f = 500 MHz
f = 1 GHz
10
1
f = 3 GHz
100
100
101
102
103
Vr (Volts)
UM6000
Ct versus Vr
1.5
f = 1 MHz
1.0
Ct (pF)
f = 5 MHz
ELECTRICALS
ELECTRICALS
f = 10 MHz
0.5
f => 100 MHz
0.0
1
10
100
250
Vr (Volts)
Copyright
2005
Rev. 0, 2006-03-13
Microsemi
Page 4
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6200
WWW .
Microsemi
.C
OM
Ct versus Vr
1.4
1.3
f = 1 MHz
1.2
Ct (pF)
f = 10 MHz
1.1
f = 100 MHz
1.0
f = 500 MHz
0.9
0.8
1
10
100
Vr (Volts)
UM6600
Ct versus Vr
0.8
0.7
0.6
f = 1 MHz
Ct (pF)
0.5
f = 5 MHz
0.4
ELECTRICALS
ELECTRICALS
f = 10 MHz
0.3
f = 100 MHz
0.2
1
10
100
Vr (Volts)
Copyright
2005
Rev. 0, 2006-03-13
Microsemi
Page 5
