2-Electrode Gas Discharge Tube (GDT)
UN2E8 Series
Description
Gas discharge Tubes (GDT) are classical components for
protecting the installations of the telecommunications. It is
essential that IT and telecommunications systems -with their
high-grade but sensitive electronic circuits - be protected by
arresters. They are thus fitted at the input of the power supply
system together with varistors and at the connection points to
telecommunication lines. They have become equally indispensable
for protecting base stations in mobile telephone systems as well as
extensive cable television (CATV) networks with their repeaters
and distribution systems.
These protective components are also indispensable in other
sectors, In AC power transmission systems, they are often used
with current-limiting varistors, In customer premises equipment
such as DSL modems, WLAN routers, TV sets and cable modems
In air-conditioning equipment, the integral black-box concept offers
graduated protection by combining arresters with varistors, PTC,
diodes and inductor.
UN2E8-XXXM/HSMD
UN2E8-XXXM/HL
UN2E8-XXXM/H
Schematic Symbol
Features
u
u
u
u
u
u
Non-Radioactive
RoHS compliant
High insulation resistance
Excellent response to fast rising transients
Ultra low capacitance
10~20KA surge capability tested with 8/20μs
pulse as defined by IEC 61000-4-5
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E341061
Product Characteristics
Materials
Leaded Device:
Nickel-plated
Tinplated wires
Surface Mount:
Dull Tin-plated
with
Applications
Product Marking
UNION XXXM/H
XXX
M
H
-Nominal voltage
- 10KA
- 20KA
u
u
u
u
u
u
u
u
u
Communication lines and equipment
CATV equipment
Test equipment
Data lines
Power supplies
Instrumentation circuits
Medical electronics
ADSL equipment
Telecom SLIC protection
Weight
Glow to Arc
Transition Current
< 0.5 Amps
~60 Volts
-40 to +90°C
UN2E8-XXXML
UN2E8-XXXHL
UN2E8-XXXM/H
UN2E8-XXXM/HSMD
~1.5g
~1.6g
~1.35g
~1.5g
Glow Voltage
Storage and
Operational
Temperature
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
1/6
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
2-Electrode Gas Discharge Tube (GDT)
UN2E8 Series
Dimensions
Unit: mm
Without wire Devices (UN2E8-XXXM/H)
Axial Leaded Devices (UN2E8-XXXML)
Axial Leaded Devices (UN2E8-XXXHL)
Surface Mount Devices (UN2E8-XXXM/HSMD)
Recommended
pad outline
Electrical Characteristics
Service Life
DC
Spark-over
Voltage
Maximum Impulse
Spark-over Voltage
Maximum
Capacitance
Arc
Voltage
Nominal
Impulse
Discharge
Current
@8/20μs
±5
times
Max
Impulse
Discharge
Current
@8/20μs
1 time
Nominal
Impulse
Discharge
Current
@50Hz
1 Sec
10 times
Part Number
Marking
Minimum
Insulation
Resistance
Impulse Life
@100V/S
@100V/μs
@1KV/μs
@1MHz
@1A
@10/1000μs
300 times
UN2E8-75M
UN2E8-75ML
UN2E8-75MSMD
75M
75V±20%
500V
600V
1 GΩ
(at 25V)
1 GΩ
(at 50V)
1 GΩ
(at 50V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1.5pF
~15V
10KA
20KA
10A
100A
UN2E8-90M
UN2E8-90ML
UN2E8-90MSMD
90M
90V±20%
500V
600V
1.5pF
~15V
10KA
20KA
10A
100A
UN2E8-150M
UN2E8-150ML
UN2E8-150MSMD
150M
150V±20%
500V
600V
1.5pF
~20V
10KA
20KA
10A
100A
UN2E8-230M
UN2E8-230ML
UN2E8-230MSMD
230M
230V±20%
600V
700V
1.5pF
~20V
10KA
20KA
10A
100A
UN2E8-250M
UN2E8-250ML
UN2E8-250MSMD
250M
250V±20%
700V
800V
1.5pF
~20V
10KA
20KA
10A
100A
UN2E8-300M
UN2E8-300ML
UN2E8-300MSMD
300M
300V±20%
800V
900V
1.5pF
~20V
10KA
20KA
10A
100A
UN2E8-350M
UN2E8-350ML
UN2E8-350MSMD
350M
350V±20%
800V
900V
1.5pF
~20V
10KA
20KA
10A
100A
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
2/6
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
2-Electrode Gas Discharge Tube (GDT)
UN2E8 Series
Electrical Characteristics
(Continue)
Service Life
DC
Spark-over
Voltage
Maximum Impulse
Spark-over Voltage
Maximum
Capacitance
Arc
Voltage
Nominal
Impulse
Discharge
Current
@1MHz
@1A
@8/20μs
±5
times
Max
Impulse
Discharge
Current
@8/20μs
1 time
Nominal
Alternating
Discharge
Current
@50Hz
1 Sec
10 times
@10/1000μs
300 times
Impulse Life
Part Number
Marking
Minimum
Insulation
Resistance
@100V/S
@100V/μs
@1KV/μs
UN2E8-420M
UN2E8-420ML
UN2E8-420MSMD
420M
420V±20%
900V
1000V
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1.5pF
~20V
10KA
20KA
10A
100A
UN2E8-470M
UN2E8-470ML
UN2E8-470MSMD
470M
470V±20%
900V
1000V
1.5pF
~20V
10KA
20KA
10A
100A
UN2E8-600M
UN2E8-600ML
UN2E8-600MSMD
600M
600V±20%
1100V
1200V
1.5pF
~20V
10KA
20KA
10A
100A
UN2E8-800M
UN2E8-800ML
UN2E8-800MSMD
800M
800V±20%
1200V
1400V
1.5pF
~20V
10KA
20KA
10A
100A
UN2E8-75H
UN2E8-75HL
UN2E8-75HSMD
75H
75V±20%
500V
600V
1 GΩ
(at 25V)
1 GΩ
(at 50V)
1 GΩ
(at 50V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1 GΩ
(at 100V)
1.5pF
~15V
20KA
25KA
20A
200A
UN2E8-90H
UN2E8-90HL
UN2E8-90HSMD
90H
90V±20%
500V
600V
1.5pF
~15V
20KA
25KA
20A
200A
UN2E8-150H
UN2E8-150HL
UN2E8-150HSMD
150H
150V±20%
500V
600V
1.5pF
~20V
20KA
25KA
20A
200A
UN2E8-230H
UN2E8-230HL
UN2E8-230HSMD
230H
230V±20%
600V
700V
1.5pF
~20V
20KA
25KA
20A
200A
UN2E8-250H
UN2E8-250HL
UN2E8-250HSMD
250H
250V±20%
700V
800V
1.5pF
~20V
20KA
25KA
20A
200A
UN2E8-300H
UN2E8-300HL
UN2E8-300HSMD
300H
300V±20%
800V
900V
1.5pF
~20V
20KA
25KA
20A
200A
UN2E8-350H
UN2E8-350HL
UN2E8-350HSMD
350H
350V±20%
800V
900V
1.5pF
~20V
20KA
25KA
20A
200A
UN2E8-420H
UN2E8-420HL
UN2E8-420HSMD
420H
420V±20%
900V
1000V
1.5pF
~20V
20KA
25KA
20A
200A
UN2E8-470H
UN2E8-470HL
UN2E8-470HSMD
470H
470V±20%
900V
1000V
1.5pF
~20V
20KA
25KA
20A
200A
UN2E8-600H
UN2E8-600HL
UN2E8-600HSMD
600H
600V±20%
1100V
1200V
1.5pF
~20V
20KA
25KA
20A
200A
UN2E8-800H
UN2E8-800HL
UN2E8-800HSMD
Notes:
800H
800V±20%
1200V
1400V
1.5pF
~20V
20KA
25KA
20A
200A
1). Terms in accordance with ITU-T K.12 and GB/T 9043-2008
2). At delivery AQL 0.65 level
Ⅱ,
DIN ISO 2859
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
3/6
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
2-Electrode Gas Discharge Tube (GDT)
UN2E8 Series
Electrical Rating
Item
DC Spark-over Voltage
Impulse Spark-over
Voltage
Insulation Resistance
Capacitance
Test Condition / Description
The voltage is measured with a slowly rate of rise dv / dt=100V/s
The maximum impulse spark-over voltage is measured with a rise time of
dv / dt=100V//μs or 1KV/μs
The resistance of gas tube shall be measured each terminal each other terminal,
please see above spec.
The capacitance of gas tube shall be measured each terminal to each other
terminal.
Test frequency :1MHz
The maximum current applying a waveform of 8/20μs that can be applied across
the terminals of the gas tube. One hour after the test is completed, re-testing of the
DC spark-over voltage does not exceed
±30%
of the nominal DC spark-over
voltage. Dwell time between pulses is 3 minutes.
To meet
the specified
value
Nominal Impulse
Discharge Current
Requirement
Nominal Alternating
Discharge Current
Rated RMS value of AC current at 50Hz, 1 sec. 10 times. Intervals: 3min. The DC
spark-over voltage does not exceed
±30%
of the nominal DC spark-over voltage.
8
IR > 10 ohms.
Recommended soldering profile
Wave soldering
Reflow soldering
Soldering profile applied a single process
Soldering Parameters - Hand Soldering
Solder Iron Temperature: 350°C +/-5°C
Heating Time: 5 seconds max.
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
4/6
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
2-Electrode Gas Discharge Tube (GDT)
UN2E8 Series
Part Numbering
UN2E8
–
XXX M L
No,
L,
SMD,
without wire
with axial wire
Surface Mount
M, 10KA
H, 20KA
8/20μs Level
Nominal DC Spark-over Voltage
75 = 75V
350=350V
90 = 90V
470=470V
150 = 150V
600=600V
230 = 230V
800=800V
Series
Packaging Information
Part Number
UN2E8-XXXM / UN2E8XXXH
Unit: mm
Description
100PCS per Tray, 10 Trays / Inner Carton
100PCS per Tray, 10 Trays / Inner Carton
100PCS per Tray, 10 Trays / Inner Carton
Quantity
1000
1000
1000
500
UN2E8-XXXML / UN2E8XXXHL
UN2E8-XXXMSMD / UN2E8XXXHSMD
Tape & Reel -16mm tape/13″Reel
Tray used in UN2E8-XXXML / UN2E8-XXXHL
Tray used in UN2E8-XXXM / UN2E8-XXXH /
UN2E8-XXXSMD
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
5/6
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
