Small Signal Transistor Arrays
UNA0228
(UN228)
Silicon PNP epitaxial planar type (2 elements)
Silicon NPN epitaxial planar type (2 elements)
Unit: mm
For motor drives
10
0.4
±0.1
9 8 7 6
0.2
+0.1
–0.0
■
Features
•
Small and lightweight
•
Low power consumption
•
Low voltage drive
•
With 4 elements incorporated
5.5
±0.3
7.7
±0.3
12°
45°
0.5
1
2
3 4 5
0.9
±0.1
6.5
±0.3
0.8
1.5
±0.1
1.5
+0.2
–0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
PNP
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Peak collector current
NPN
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage
(Collector open)
Collector current
Peak collector current
Overall
Total power dissipation
Junction temperature
Storage temperature
*
12°
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
−12
−10
−7
−1
−2.5
12
10
7
1
2.5
0.5
150
−55
to
+150
Unit
V
V
V
A
A
V
V
V
A
A
W
°C
°C
1
2
1: Emitter
2: Base
3: Collector
4: Base
5: Emitter
6: Emitter
7: Base
8: Collector
9: Base
10: Emitter
SO10-G1 Package
Marking Symbol: UN228
Internal Connection
10
9
8
7
6
3
4
5
Note) *: When the dissipation on one device is T
C
=
25°C
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SJK00049BED
0.5
±0.2
1
UNA0228
■
Electrical Characteristics
T
a
=
25°C
±
3°C
•
PNP
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward voltage
*2
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
V
F
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −10
V, I
E
=
0
V
CE
= −1
V, I
C
= −
0.5 A
I
C
= −1
A, I
B
= −30
mA
V
CB
= −6
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
I
F
= −1
A
200
−
0.2
150
65
−1.5
Min
−12
−10
−7
−1
800
−
0.3
Typ
Max
Unit
V
V
V
µA
V
MHz
pF
V
•
NPN
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward voltage
*2
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
V
F
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
1 V, I
C
=
0.5 A
I
C
=
1 A, I
B
=
30 mA
V
CB
=
6 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
I
F
=
1 A
200
0.2
150
50
1.5
Min
12
10
7
1
800
0.3
Typ
Max
Unit
V
V
V
µA
V
MHz
pF
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Application to the built-in diode
2
SJK00049BED
UNA0228
Common characteristics chart
P
T
T
a
0.6
Total power dissipation P
T
(W)
0.5
0.4
0.3
0.2
0.1
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of PNP transistor block
I
C
V
CE
−4.8
T
a
=
25°C
−6
I
C
V
BE
V
CE
= −1
V
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
=
100/3
−4.0
−5
Collector current I
C
(A)
Collector current I
C
(A)
−1
T
a
=
75°C
25°C
−25°C
−3.2
I
B
= −14
mA
−2.4
−12
mA
−10
mA
−8
mA
−6
mA
−4
mA
−2
mA
0
0
−2
−4
−6
−8
−10
−12
−4
T
a
=
75°C
25°C
−25°C
−3
−10
−1
−1.6
−2
−10
−2
−
0.8
−1
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
−2.4
−10
−3
−
0.01
−
0.1
−1
−10
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
h
FE
I
C
V
CE
= −1
V
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
240
f
=
1 MHz
I
E
=
0
T
a
=
25°C
600
Forward current transfer ratio h
FE
500
T
a
=
75°C
25°C
300
−25°C
200
400
160
120
200
80
100
40
0
−
0.01
−
0.1
−1
−10
0
−
0.1
−1
−10
−100
Collector current I
C
(A)
Collector-base voltage V
CB
(V)
SJK00049BED
3
UNA0228
Characteristics charts of NPN transistor block
I
C
V
CE
4.8
T
a
=
25°C
6
I
C
V
BE
V
CE
=
1 V
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
I
C
/ I
B
=
100/3
4.0
5
Collector current I
C
(A)
Collector current I
C
(A)
1
T
a
=
75°C
10
−1
25°C
−25°C
3.2
I
B
=
14 mA
12 mA
10 mA
8 mA
4
T
a
=
75°C
25°C
−25°C
2.4
3
1.6
6 mA
4 mA
2
10
−2
0.8
2 mA
0
1
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10
−3
0.01
0.1
1
10
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
h
FE
I
C
V
CE
=
1 V
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
120
f
=
1 MHz
I
E
=
0
T
a
=
25°C
600
Forward current transfer ratio h
FE
500
100
400
T
a
=
75°C
300
25°C
−25°C
200
80
60
40
100
20
0
0.01
0.1
1
10
0
0.1
1
10
100
Collector current I
C
(A)
Collector-base voltage V
CB
(V)
4
SJK00049BED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
