UNISONIC TECHNOLOGIES CO., LTD
UP1855
HIGH CURRENT TRANSISTOR
FEATURES
* High current switching
* Low V
CE(SAT)
* High h
FE
1
PNP SILICON TRANSISTOR
SOT-223
*Pb-free plating product number: UP1855L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UP1855-x-AA3-R
UP1855L-x-AA3-R
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
UP1855L-x-AA3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) R: Tape Reel
(2) AA3: SOT-223
(3) refer to Classification of h
FE2
(4) L: Lead Free Plating, Blank: Pb/Sn
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ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
PARAMETER
PNP SILICON TRANSISTOR
SYMBOL
RATINGS
Collector -Base Voltage
V
CBO
-180
Collector -Emitter Voltage
V
CEO
-140
Emitter -Base Voltage
V
EBO
-6
Collector Current (Pulse)
I
CM
-10
Collector Current (DC)
I
C
-4
Power Dissipation
P
D
1
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-40 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
= -100µA
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
I
E
= -100µA
V
CB
=-150V
Collector Cut-off Current
I
CBO
V
CB
=-150V, Ta=100°C
Emitter Cut-off Current
I
EBO
V
EB
=-6V
I
C
=-100mA, I
B
=-5mA
I
C
=-500mA, I
B
=-50mA
Collector-Emitter Saturation Voltage
V
CE (SAT)
I
C
=-1A, I
B
=-100mA
I
C
=-3A, I
B
=-300mA
Base-Emitter Saturation Voltage
V
BE (SAT)
I
C
=-3A, I
B
=-300mA
Base-Emitter Turn-On Voltage
V
BE (ON)
I
C
=-3A, V
CE
=-5V
h
FE1
I
C
=-10mA, V
CE
=-5V
h
FE2
I
C
=-1A, V
CE
=-5V
DC Current Gain
h
FE3
I
C
=-3A, V
CE
=-5V
h
FE4
I
C
=-10A, V
CE
=-5V
f
T
Cob
t
ON
Switching Times
t
OFF
Note: Pulse test: t
P
≤
300µs, Duty cycle
≤
2%
Transition Frequency
Output Capacitance
I
C
=-100mA, V
CE
=-10V, f=50MHz
V
CB
=-20V, f=1MHz
I
C
=-1A, V
CC
=-50V
I
B1
=-100mA, I
B2
=100mA
MIN
-180
-140
-6
TYP
-210
-170
-8
MAX
UNIT
V
V
V
nA
µA
nA
mV
mV
mV
100
100
75
-30
-70
-110
-275
-970
-830
200
140
10
110
40
68
1030
-50
-1
-10
-60
-120
-150
-370
-1110
-950
300
MHz
pF
ns
ns
CLASSIFICATION OF h
FE2
RANK
RANGE
A
100 ~ 200
B
180 ~ 300
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TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
DC Current Gain vs.
Collector Current
Base-Emitter Turn-on Voltage
V
BE(ON)
+100℃
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Base-Emitter Turn-on Voltage vs.
Collector Current
V
CE
= 5V
300
DC Current Gain, h
FE
+25℃
200
-40℃
100
V
CE
= 5V
0
0.001
0.01
0.1
1
10
-
40℃
+
25℃
+
100
℃
+
150℃
0
0. 001
0 01
.
0.1
1
10
Collector Current, Ic (A)
Collector Current, Ic (A)
Collector-Emitter Saturation Voltage vs.
Collector Current
Collector-Emitter Saturation Voltage vs.
Collector Current
Collector-Emitter Saturation Voltage
h
FE
=10
1.6
1.4
V
CE(SAT)
(V)
Collector-Emitter Saturation Voltage
Ta = 25℃
1.6
1.4
V
CE(SAT)
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
I
C
/ I
B
=10
0.01
0.1
1
10
I
C
/ I
B
= 50
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
+150℃
-40℃
+25℃
Collector Current, Ic (A)
Collector Current, Ic (A)
Base-Emitter Saturation Voltage vs.
Collector Current
Base-Emitter Saturation Voltage
h
FE
=10
Coll ector Curr ent, Ic ( A)
Safe Operating Area
10
1.6
1.4
V
BE(SAT)
(V)
1s
1
100ms 10ms 1
.
0ms 0.1ms
1.2
1.0
0.8
0.6
0.4
0.2
-40℃
+25℃
+100
℃
D.C.
0.1
+150℃
0
0.001
0.01
0.1
1
10
0 . 01
1
10
100
500
Collector Current, Ic (A)
Collector Voltage , V
CE
(V)
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UP1855
PNP SILICON TRANSISTOR
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R220-015.D
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