DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD166010
PACKAGE DRAWING (unit: mm)
1.0 TYP
6.5±0.2
5.0 TYP
4.3 MIN
2.3±0.1
0.5±0.1
SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE
GENERAL DESCRIPTION
The
μ
PD166010 device is an N-channel high-side switch with charge
pump, current controlled input, diagnostic feedback with load current
4.0 MIN (4.4 TYP)
sense and embedded protection functions.
6
FEATURES
• Built-in charge pump
• Low on-state resistance
• Short-circuit protection
- Shutdown by short-circuit detection
• Over-temperature protection
- Shutdown with auto-restart on cooling
• Small multi-chip package: JEDEC 5-pin TO-252
(MSL: 3, profile acc. J-STD-20C)
• Built-in diagnostic function
- Proportional load current sensing
1
2
3
4
5
10.3 MAX (9.8 TYP)
6.1±0.2
0 to 0.25
0.8
1.14
0.6±0.1
NOTE
1.
No Plating area
- Defined fault signal in case of thermal shutdown and/or short circuit shutdown
•
AEC Qualified
ORDERING INFORMATION
Part Number
Lead plating
Note
Packing
Tape 2500 p/reel
Package
5-pin TO-252 (MP-3ZK)
μ
PD166010T1F-E1-AY
Sn
Note
Pb-free (This product does not contain Pb in the external electrode.)
QUALITY GRADE
Part Number
Quality Grade
Special
μ
PD166010T1F-E1-AY
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
APPLICATION
• Light bulb (to 55 W) switching
• Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor
• Replacement for fuse and relay
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. S19689EJ1V0DS00 (1st edition)
Date Published March 2009 NS
Printed in Japan
SEATING PLANE
GAUGE PLANE
1.52±0.12
0.5±0.1
0.508
2009
μ
PD166010
BLOCK DIAGRAM
3 & Tab
V
CC
VCC
VCC - VIN
Internal
power supply
Power supply
voltage sense
Control logic
Output voltage
clamp
I
CC
Von
Charge pump
Current
detector
Output voltage
sense
Fault signal
output
Temperature
Sensor
Dynamic
clamp
OUT
Current sense
ESD
protection
IS
4
VIS
RIS
IIS
Load
IL
1&5
IIN
2
VIN
IN
ESD
protection
V
OUT
PIN CONFIGURATION
Pin No.
1
2
3&Tab
4
5
Terminal Name
OUT
IN
V
CC
I
S
OUT
Function
Output to load: pin 1 and 5 must be externally shorted.
Input; activates the power switch, if shorted to ground.
Supply Voltage: tab and pin 3 are internally shorted.
Sense Output: diagnostic feedback
Note
Tab
1 2 3 4 5
Output to load: pin 1 and 5 must be externally shorted.
Note
If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor.
2
Data Sheet S19689EJ1V0DS
μ
PD166010
ABSOLUTE MAXIMUM RATING (Ta = 25°C, unless otherwise specified)
Parameter
V
CC
voltage
V
CC
voltage (Load Dump)
Symbol
V
CC1
V
CC2
R
I
= 1
Ω,
R
L
= 1.5
Ω,
t
d
= 400 ms,
R
IS
= 1 kΩ, IN = low or high
V
CC
voltage (Reverse polarity)
Load current
Load current (short circuit
current)
Power dissipation
P
D
T
C
= 25°C
I
L
= 10 A, V
CC
= 12 V, Tch,start
≤
150°C,
refer to page 16
E
AS2
V
CC
= 18 V, Tch,start
≤
150°C, R
supply
= 10 mΩ,
R
short
= 50 mΩ, L
supply
= 5
μ
H, L
short
= 15
μ
H,
refer to page 16
T
ch
T
stg
V
ESD
HBM
AEC-Q100-002 std.
R = 1.5 kΩ, C = 100pF
MM
AEC-Q100-003 std.
R = 0
Ω,
C = 200pF
Voltage of IN pin
V
IN
DC
Reverse polarity condition, 1 minute
Voltage of IS pin
V
IS
DC
Reverse polarity condition, 1 minute
V
CC
−28
V
V
CC
+14 V
V
CC
−28
V
V
CC
+14 V
V
V
V
V
400
V
−40
to +150
−55
to +150
2000
°C
°C
V
105
mJ
59
50
W
mJ
-V
CC
I
L
I
L(SC)
R
L
= 2.2
Ω,
1 minute
DC, T
C
= 25°C
−16
30
Self Limited
V
A
A
Test Conditions
Rating
28
40
Unit
V
V
Inductive load switch-off energy E
AS1
dissipation single pulse
Maximum allowable energy
under over load condition
(Single pulse)
Channel temperature
Storage temperature
Electric discharge capability
RECOMMENDED OPERATING CONDITIONS
Parameter
Power supply voltage
Symbol
V
CC
Test Conditions
T
ch
=
−40
to 150°C
Min.
8
Typ.
−
Max.
18
Unit
V
Cautions 1. It is assumed that V
IN
= 0 V when the device is activated.
2. Device operating range is limited by energy dissipation capability of the driver.
User must
carefully consider worst case load and current conditions in combination of operating voltage.
THERMAL CHARACTERISTICS
Parameter
Thermal resistance
Symbol
R
th(ch-a)
Test Conditions
Device on 50 mm x 50 mm x 1.5 mmt
epoxy PCB FR-4 with 6 cm of 70
μ
m
2
Min.
−
Typ.
45
Max.
55
Unit
°C/W
copper area
R
th(ch-c)
−
−
3.17
°C/W
Data Sheet S19689EJ1V0DS
3
μ
PD166010
ELECTRICAL CHARACTERISTICS (V
CC
= 12 V, T
ch
= 25°C, unless otherwise specified)
Parameter
Required current capability of
Input switch
Input current for turn-off
Standby current
I
IL
I
CC(off)
I
IN
= 0 A
T
ch
= 25°C
T
ch
=
−40
to 150°C
On state resistance
R
on
I
L
= 7.5 A
T
ch
= 25°C
T
ch
= 150°C
Output voltage drop limitation
as small load current
Turn on Time
Turn off Time
Slew rate on
t
on
t
off
dV/dton
R
L
= 2.2
Ω,
T
ch
=
−40
to 150°C, refer to page 15
25 to 50% V
OUT
, R
L
= 2.2
Ω,
T
ch
=
−40
to 150°C, refer to page 15
Slew rate off
-dV/dtoff
50 to 25% V
OUT
, R
L
= 2.2
Ω,
T
ch
=
−40
to 150°C, refer to page 15
−
0.2
0.5
V/
μ
s
−
−
−
200
250
0.2
500
600
0.6
V
on(NL)
T
ch
=
−40
to 150°C, refer to page 14
−
−
−
−
−
−
−
2.5
2.5
8
14
30
50
5.0
15.0
10
18
65
mV
Symbol
I
IH
Test Conditions
T
ch
=
−40
to 150°C
Min.
−
Typ.
1.0
Max.
2.2
Unit
mA
μ
A
μ
A
μ
A
mΩ
μ
s
μ
s
V/
μ
s
4
Data Sheet S19689EJ1V0DS
μ
PD166010
PROTECTION FUNCTIONS (V
CC
= 12 V, T
ch
= 25°C, unless otherwise specified)
Parameter
On-state resistance at reverse
battery condition
Note
Symbol
R
on(rev)
< 150
Ω
Test Conditions
V
CC
=
−12
V, I
L
=
−7.5
A, R
IS
= 1 kΩ, R
IN
T
ch
= 25°C
T
ch
= 150°C
Min.
Typ.
Max.
Unit
−
−
−
−
20
−
−
10
−
76
50
−
−
40
−
−
10
−
−
60
−
−
50
−
−
30
−
−
5
30
9.5
16
50
50
45
35
35
35
110
105
95
90
85
80
55
50
45
130
125
110
110
110
100
75
70
65
50
50
45
34
13
22
120
−
−
110
−
−
180
−
−
160
−
−
120
−
−
200
−
−
170
−
−
120
−
−
90
−
−
40
mΩ
mΩ
A
Short circuit detection current
I
L6, 3(SC)
Note
V
CC
−
V
IN
= 6 V,
V
on
= 3 V
T
ch
=
−40°C
T
ch
= 25°C
T
ch
= 150°C
I
L6, 6(SC)
Note
V
CC
−
V
IN
= 6 V,
V
on
= 6 V
T
ch
=
−40°C
T
ch
= 25°C
T
ch
= 150°C
I
L12, 3(SC)
V
CC
−
V
IN
= 12 V,
V
on
= 3 V
Note
T
ch
=
−40°C
T
ch
= 25°C
T
ch
= 150°C
I
L12, 6(SC)
V
CC
−
V
IN
= 12 V,
V
on
= 6 V
T
ch
=
−40°C
T
ch
= 25°C
T
ch
= 150°C
I
L12, 12(SC)
Note
V
CC
−
V
IN
= 12 V,
V
on
= 12 V
T
ch
=
−40°C
T
ch
= 25°C
T
ch
= 150°C
I
L18, 3(SC)
Note
V
CC
−
V
IN
= 18 V,
V
on
= 3 V
T
ch
=
−40°C
T
ch
= 25°C
T
ch
= 150°C
I
L18, 6(SC)
Note
V
CC
−
V
IN
= 18 V,
V
on
= 6 V
T
ch
=
−40°C
T
ch
= 25°C
T
ch
= 150°C
I
L18, 12(SC)
Note
V
CC
−
V
IN
= 18 V,
V
on
= 12 V
T
ch
=
−40°C
T
ch
= 25°C
T
ch
= 150°C
I
L18, 18(SC)
Note
V
CC
−
V
IN
= 18 V,
V
on
= 18 V
T
ch
=
−40°C
T
ch
= 25°C
T
ch
= 150°C
Output clamp voltage
(inductive load switch off)
Over load detection voltage
Turn-on check delay after input
Note
current positive slope
Under voltage shutdown
V
on(CL)
I
L
= 40 mA, T
ch
= –40 to 150°C
T
ch
=
−40
to 150°C
T
ch
=
−40
to 150°C
T
ch
= –40°C
T
ch
= 25°C
T
ch
= 150°C
V
V
ON(OvL)
t
d(OC)
V
CIN(Uv)
0.65
0.9
−
3.6
3.2
−
4.1
3.7
150
−
1
2.1
−
4.5
−
−
5.1
−
175
10
1.45
3.8
5.8
5.4
−
6.5
6.0
−
−
−
V
ms
V
V
V
V
V
V
°C
°C
Under voltage restart of
charge pump
V
CIN(CPr)
T
ch
= –40°C
T
ch
= 25°C
T
ch
= 150°C
Thermal shutdown
temperature
Thermal hysteresis
T
th
ΔT
th
Note
Not subject to production test, specified by design.
Data Sheet S19689EJ1V0DS
5
