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UPD431008LE-15

Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

器件类别:存储    存储   

厂商名称:NEC(日电)

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
NEC(日电)
Objectid
1416122496
包装说明
0.400 INCH, PLASTIC, SOJ-32
Reach Compliance Code
compliant
compound_id
293937349
最长访问时间
15 ns
JESD-30 代码
R-PDSO-J32
JESD-609代码
e0
长度
21.06 mm
内存密度
1048576 bit
内存集成电路类型
STANDARD SRAM
内存宽度
8
功能数量
1
端口数量
1
端子数量
32
字数
131072 words
字数代码
128000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
128KX8
输出特性
3-STATE
可输出
YES
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
座面最大高度
3.7 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
TIN LEAD
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
10.16 mm
文档预览
DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD431008
1M-BIT CMOS FAST STATIC RAM
128K-WORD BY 8-BIT
Description
The
µ
PD431008 is a high speed, low power, 1 048 576 bits (131 072 words by 8 bits) CMOS static RAM.
The
µ
PD431008 is packed in 32-pin plastic SOJ.
Feature
q
q
q
q
q
q
q
131 072 words by 8 bits organization
Fast access time 15, 17, 20 ns (MAX.)
Output buffers control: OE
Common I/O using three state outputs
Fully static operation: no clock or refreshing to operate
TTL compatible: all inputs and outputs
Single +5 V power supply
Ordering Information
Operating
supply current
mA (MAX.)
160
150
140
10
Standard
Standby
supply current
mA (MAX.)
Quality grade
Access time
Part number
Package
ns (MAX.)
15
32-pin plastic
SOJ (400 mil)
20
17
µ
PD431008LE-15
µ
PD431008LE-17
µ
PD431008LE-20
Remark
Operating supply current is 120 mA (MAX.) when this product is used at 50ns cycle time.
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
The information in this document is subject to change without notice.
Document No. IC-3242
(O.D.No.
IC-8815)
Date Published July 1993 P
Printed in Japan
©
1993
1992
µ
PD431008
Pin Configuration (Marking Side)
32-Pin Plastic SOJ (400 mil)
A3
A2
A1
A0
CS
I/O1
I/O2
V
CC
GND
I/O3
I/O4
WE
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A4
A5
A6
A7
OE
I/O8
I/O7
GND
V
CC
I/O6
I/O5
A8
A9
A10
A11
A12
µ
PD431008LE-15
µ
PD431008LE-17
µ
PD431008LE-20
A0 – A16
CS
WE
OE
V
CC
GND
:
:
:
:
:
:
Address Inputs
Data Inputs/Outputs
Chip Select
Write Enable
Output Enable
Power Supply
Ground
I/O1 – I/O8 :
2
µ
PD431008
Block Diagram
A7
1
Address
buffer
8
9
Row
decoder
Memory cell array
1 048 576 bits
(512× 256
×
8)
A9
A16
I/O1
I/O8
Input data
controller
Sense/Switch
Output data
controller
Column decoder
8
Address buffer
7
A0 - A6
1
A8
CS
WE
OE
V
CC
GND
Truth Table
CS
H
L
L
L
OE
!
L
!
H
WE
!
H
L
H
Mode
Not selected
Read
Write
Output disable
I/O
Hi-Z
D
OUT
D
IN
Hi-Z
I
CC
Supply current
I
SB
Remark
!
: Don't care
3
µ
PD431008
Electrical Specifications
Absolute Maximum Ratings
Parameter
Supply voltage
Input/Output voltage
Operating temperature
Storage temperature
Note
Symbol
V
CC
V
T
T
opt
T
stg
Rating
– 0.5
Note
to +7.0
– 0.5
Note
to V
CC
+0.5
0 to +70
– 55 to +125
Unit
V
V
°C
°C
–3.0 V (MIN.) (Pulse width: 10 ns)
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Ambient temperature
Note
Symbol
V
CC
V
IH
V
IL
T
a
MIN.
4.5
2.2
– 0.5
Note
0
TYP.
5.0
MAX.
5.5
V
CC
+0.5
+0.8
+70
Unit
V
V
V
°C
–3.0 V (MIN.) (Pulse width: 10 ns)
DC Characteristics (Recommended operating conditions unless otherwise noted)
Parameter
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
Test conditions
V
IN
= 0 V to V
CC
V
I/O
= 0 V to V
CC
, CS = V
IH
or OE = V
IH
or
WE = V
IL
Cycle time: 15 ns
Operating supply current
I
CC
CS = V
IL
,
I
I/O
= 0 mA
Cycle time: 17 ns
Cycle time: 20 ns
Cycle time: 50 ns
I
SB
Standby supply current
I
SB1
V
OH
V
OL
CS = V
IH
, V
IN
= V
IH
or V
IL
V
CC
– 0.2 V
<
CS,
=
<
0.2 V or V
CC
– 0.2 V
<
V
IN
V
IN
=
=
I
OH
= –4.0 mA
I
OL
= 8 mA
2.4
0.4
MIN.
–2
–2
TYP.
MAX.
+2
+2
160
150
mA
140
120
30
10
mA
Unit
µ
A
µ
A
High level output voltage
Low level output voltage
Remark
V
IN
: Input voltage
V
V
Capacitance (T
a
= +25
°C,
f = 1 MHz)
Parameter
Input capacitance
Input/Output capacitance
Remark 1.
V
IN
: Input voltage
2.
These parameters are periodically sampled and not 100 % tested.
Symbol
C
IN
C
I/O
V
IN
= 0 V
V
I/O
= 0 V
Test conditions
MIN.
TYP.
MAX.
6
8
Unit
pF
pF
4
µ
PD431008
AC Characteristics (Recommended operating conditions unless otherwise noted)
AC Test Conditions
Input waveform (Rise/fall time < 3 ns)
=
3.0 V
1.5 V
GND
Test points
1.5 V
Output waveform
1.5 V
Test points
1.5 V
Output load
AC Characteristics directed with the note should be measured with the output load shown in
Fig. 1
or
Fig. 2.
Fig. 1
(For t
AA
, t
ACS
, t
OE
, t
OH
)
+5 V
Fig. 2
(For t
CHZ
, t
CLZ
, t
OHZ
, t
OLZ
, t
WHZ
, t
OW
)
+5 V
480
480
I/O (Output)
I/O (Output)
255
30 pF
C
L
255
5 pF
C
L
Remark
C
L
includes capacitances of the probe and jig, and stray capacitances.
5
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参数对比
与UPD431008LE-15相近的元器件有:UPD431008LE-17、UPD431008LE-20。描述及对比如下:
型号 UPD431008LE-15 UPD431008LE-17 UPD431008LE-20
描述 Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Standard SRAM, 128KX8, 17ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
是否Rohs认证 不符合 不符合 不符合
包装说明 0.400 INCH, PLASTIC, SOJ-32 0.400 INCH, PLASTIC, SOJ-32 0.400 INCH, PLASTIC, SOJ-32
Reach Compliance Code compliant compliant compliant
最长访问时间 15 ns 17 ns 20 ns
JESD-30 代码 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32
JESD-609代码 e0 e0 e0
长度 21.06 mm 21.06 mm 21.06 mm
内存密度 1048576 bit 1048576 bit 1048576 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8
功能数量 1 1 1
端口数量 1 1 1
端子数量 32 32 32
字数 131072 words 131072 words 131072 words
字数代码 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C
组织 128KX8 128KX8 128KX8
输出特性 3-STATE 3-STATE 3-STATE
可输出 YES YES YES
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ SOJ SOJ
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 3.7 mm 3.7 mm 3.7 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 TIN LEAD TIN LEAD TIN LEAD
端子形式 J BEND J BEND J BEND
端子节距 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 10.16 mm 10.16 mm 10.16 mm
Base Number Matches - 1 1
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