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UPD44647364F5-E33-FQ1

QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165

器件类别:存储    存储   

厂商名称:NEC(日电)

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
NEC(日电)
零件包装代码
BGA
包装说明
LBGA,
针数
165
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.A
最长访问时间
0.45 ns
JESD-30 代码
R-PBGA-B165
JESD-609代码
e0
长度
17 mm
内存密度
75497472 bit
内存集成电路类型
QDR SRAM
内存宽度
36
功能数量
1
端子数量
165
字数
2097152 words
字数代码
2000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
2MX36
封装主体材料
PLASTIC/EPOXY
封装代码
LBGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY, LOW PROFILE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
座面最大高度
1.51 mm
最大供电电压 (Vsup)
1.9 V
最小供电电压 (Vsup)
1.7 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
TIN LEAD
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
15 mm
文档预览
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD44647094, 44647184, 44647364, 44647096, 44647186, 44647366
72M-BIT QDR
TM
II+ SRAM
2.0 & 2.5 Cycle Read Latency
4-WORD BURST OPERATION
Description
The
μ
PD44647094 and
μ
PD44647096 are 8,388,608-word by 9-bit, the
μ
PD44647184 and
μ
PD44647186 are
4,194,304-word by 18-bit and the
μ
PD44647364 and
μ
PD44647366 are 2,097,152-word by 36-bit synchronous quad data
rate static RAMs fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44647xx4 is for 2.0 cycle and the
μ
PD44647xx6 is for 2.5 cycle read latency. The
μ
PD44647094,
μ
PD44647096,
μ
PD44647184,
μ
PD44647186,
μ
PD44647364 and
μ
PD44647366 integrate unique synchronous
peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on
the positive edge of K and K#.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features
Core (V
DD
) = 1.8 ± 0.1 V power supply
I/O (V
DD
Q) = 1.5 ± 0.1 V power supply
165-pin PLASTIC BGA (15x17)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Four-tick burst for reduced address frequency
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two Echo clocks (CQ and CQ#)
Data Valid pin (QVLD) supported
Read latency : 2.0 & 2.5 clock cycles (Not selectable by user)
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 2,048 cycles after clock is resumed.
User programmable impedance output (35 to 70
Ω)
Fast clock cycle time : 2.66 ns (375 MHz) for 2.0 cycle read latency,
2.5 ns (400 MHz) for 2.5 cycle read latency
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M18526EJ1V0DS00 (1st edition)
Date Published November 2006 NS CP(N)
Printed in Japan
2006
μ
PD44647094, 44647184, 44647364, 44647096, 44647186, 44647366
Ordering Information
2.0 Cycle Read Latency
Part number
Cycle
Time
ns
Clock
Frequency
MHz
375
333
300
375
333
300
375
333
300
375
333
300
375
333
300
375
333
300
2M x 36-bit
4M x 18-bit
8M x 9-bit
1.8 ± 0.1
HSTL
165-pin PLASTIC
BGA (15x17)
Lead-free
2M x 36-bit
4M x 18-bit
8M x 9-bit
Organization
(word x bit)
Core
Supply
Voltage
V
1.8 ± 0.1
HSTL
165-pin PLASTIC
BGA (15x17)
I/O
Interface
Package
μ
PD44647094F5-E27-FQ1
μ
PD44647094F5-E30-FQ1
μ
PD44647094F5-E33-FQ1
μ
PD44647184F5-E27-FQ1
μ
PD44647184F5-E30-FQ1
μ
PD44647184F5-E33-FQ1
μ
PD44647364F5-E27-FQ1
μ
PD44647364F5-E30-FQ1
μ
PD44647364F5-E33-FQ1
μ
PD44647094F5-E27-FQ1-A
μ
PD44647094F5-E30-FQ1-A
μ
PD44647094F5-E33-FQ1-A
μ
PD44647184F5-E27-FQ1-A
μ
PD44647184F5-E30-FQ1-A
μ
PD44647184F5-E33-FQ1-A
μ
PD44647364F5-E27-FQ1-A
μ
PD44647364F5-E30-FQ1-A
μ
PD44647364F5-E33-FQ1-A
2.66
3.0
3.3
2.66
3.0
3.3
2.66
3.0
3.3
2.66
3.0
3.3
2.66
3.0
3.3
2.66
3.0
3.3
Remark
Products with -A at the end of the part number are lead-free products.
2
Preliminary Data Sheet M18526EJ1V0DS
μ
PD44647094, 44647184, 44647364, 44647096, 44647186, 44647366
2.5 Cycle Read Latency
Part number
Cycle
Time
ns
Clock
Frequency
MHz
400
375
333
300
400
375
333
300
400
375
333
300
400
375
333
300
400
375
333
300
400
375
333
300
2M x 36-bit
4M x 18-bit
8M x 9-bit
1.8 ± 0.1
HSTL
165-pin PLASTIC
BGA (15x17)
Lead-free
2M x 36-bit
4M x 18-bit
8M x 9-bit
Organization
(word x bit)
Core
Supply
Voltage
V
1.8 ± 0.1
HSTL
165-pin PLASTIC
BGA (15x17)
I/O
Interface
Package
μ
PD44647096F5-E25-FQ1
μ
PD44647096F5-E27-FQ1
μ
PD44647096F5-E30-FQ1
μ
PD44647096F5-E33-FQ1
μ
PD44647186F5-E25-FQ1
μ
PD44647186F5-E27-FQ1
μ
PD44647186F5-E30-FQ1
μ
PD44647186F5-E33-FQ1
μ
PD44647366F5-E25-FQ1
μ
PD44647366F5-E27-FQ1
μ
PD44647366F5-E30-FQ1
μ
PD44647366F5-E33-FQ1
μ
PD44647096F5-E25-FQ1-A
μ
PD44647096F5-E27-FQ1-A
μ
PD44647096F5-E30-FQ1-A
μ
PD44647096F5-E33-FQ1-A
μ
PD44647186F5-E25-FQ1-A
μ
PD44647186F5-E27-FQ1-A
μ
PD44647186F5-E30-FQ1-A
μ
PD44647186F5-E33-FQ1-A
μ
PD44647366F5-E25-FQ1-A
μ
PD44647366F5-E27-FQ1-A
μ
PD44647366F5-E30-FQ1-A
μ
PD44647366F5-E33-FQ1-A
2.5
2.66
3.0
3.3
2.5
2.66
3.0
3.3
2.5
2.66
3.0
3.3
2.5
2.66
3.0
3.3
2.5
2.66
3.0
3.3
2.5
2.66
3.0
3.3
Remarks
Products with -A at the end of the part number are lead-free products.
Preliminary Data Sheet M18526EJ1V0DS
3
μ
PD44647094, 44647184, 44647364, 44647096, 44647186, 44647366
Feature Differences between QDR II and QDR II+
Features
Frequency (DLL/PLL ON)
Organization
V
DD
V
DD
Q
Read Latency (RL)
Input Clocks (K, K#)
Output Clocks (C, C#)
Echo Clock Number (CQ, CQ#)
Package
Individual Byte Write (BWx#)
QVLD
QDR II
120 MHz to 300 MHz
x8 / x9 / x18 / x36
1.8 ± 0.1 V
1.8 ± 0.1 V or 1.5 ± 0.1 V
1.5 clocks
Single Ended (K, K#)
Yes
1 Pair
165 (11x15) pin PLASTIC BGA
Yes
No
QDR II+
300 MHz to 400 MHz
x9 / x18 / x36
1.8 ± 0.1 V
1.5 ± 0.1 V
2.0 & 2.5 clocks
Single Ended (K, K#)
No
1 Pair
165 (11x15) pin PLASTIC BGA
Yes
Yes
3
2
1
Note
Notes 1.
QDR II+ read latency is not user selectable. Offered as two different devices.
2.
Echo Clocks are single-ended inputs.
3.
Edge aligned with Echo Clocks
4
Preliminary Data Sheet M18526EJ1V0DS
μ
PD44647094, 44647184, 44647364, 44647096, 44647186, 44647366
Pin Configurations
165-pin PLASTIC BGA (15x17)
(Top View)
[
μ
PD44647094], [
μ
PD44647096]
8M x 9-bit
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ#
NC
NC
NC
NC
NC
NC
DLL#
NC
NC
NC
NC
NC
NC
TDO
2
A
NC
NC
D5
NC
NC
D6
V
REF
NC
NC
Q7
NC
D8
NC
TCK
3
A
NC
NC
NC
Q5
NC
Q6
V
DD
Q
NC
NC
D7
NC
NC
Q8
A
4
W#
A
V
SS
V
SS
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
SS
V
SS
A
A
5
NC
NC/288M
6
K#
K
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
A
QVLD
NC
7
NC/144M
8
R#
A
V
SS
V
SS
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
DD
Q
V
SS
V
SS
A
A
9
A
NC
NC
NC
NC
NC
NC
V
DD
Q
NC
NC
NC
NC
NC
NC
A
10
A
NC
NC
NC
D3
NC
NC
V
REF
Q2
NC
NC
NC
NC
D0
TMS
11
CQ
Q4
D4
NC
Q3
NC
NC
ZQ
D2
NC
Q1
D1
NC
Q0
TDI
BW0#
A
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
A
A
A
A
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
A
A
A
A
D0 to D8
Q0 to Q8
R#
W#
BW0#
K, K#
CQ, CQ#
ZQ
DLL#
QVLD
: Address inputs
: Data inputs
: Data outputs
: Read input
: Write input
: Byte Write data select
: Input clock
: Echo clock
: Output impedance matching
: DLL/PLL disable
: Q Valid output
TMS
TDI
TCK
TDO
V
REF
V
DD
V
DD
Q
V
SS
NC
NC/xxM
: IEEE 1149.1 Test input
: IEEE 1149.1 Test input
: IEEE 1149.1 Clock input
: IEEE 1149.1 Test output
: HSTL input reference input
: Power Supply
: Power Supply
: Ground
: No connection
: Expansion address for xxMb
Remarks 1.
×××#
indicates active LOW signal.
2.
Refer to
Package Drawing
for the index mark.
3.
7A and 5B are expansion addresses: 7A for 144Mb and 5B for 288Mb.
Preliminary Data Sheet M18526EJ1V0DS
5
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