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UPT48R

Trans Voltage Suppressor Diode

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Microsemi
零件包装代码
DO-216AA
针数
2
Reach Compliance Code
unknow
ECCN代码
EAR99
文档预览
UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3
and UPTB5e3 – UPTB48e3
Available
5V – 48V Small Footprint, Surface Mount
Transient Voltage Suppressors
DESCRIPTION
Microsemi’s unique Powermite UPT series of transient voltage suppressors feature oxide-
passivated chips with high-temperature solder bonds for high surge capability and negligible
electrical degradation under repeated surge conditions. Both unidirectional and bidirectional
configurations are available. In addition to its size advantages, the Powermite package includes a
fully metallic bottom (cathode) side that eliminates the possibility of solder flux entrapment at
assembly and a unique locking tab serves as an integral heat sink. Its innovative design makes this
device fully compatible for use with automatic insertion equipment.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Powermite package with standoff voltages 5 to 48 V.
Both unidirectional and bidirectional polarities:
-Anode to case bottom (UPT5e3 thru UPT48e3)
-Cathode to case bottom (UPT5Re3 thru UPT48Re3)
-Bidirectional (UPTB5e3 thru UPTB48e3)
Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional.
100% surge current testing of all parts.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
RoHS compliant versions available.
Powermite 1
(DO-216AA)
Package
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching and induced RF transients.
New improved lower leakage current for the UPT5Re3:
-Integral heat sink / locking tabs
-Fully metallic bottom side eliminates flux entrapment
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: UPT5//UPT5R/UPTB8 to17
Class 2: UPT5//UPT5R/UPTB5 to12
2
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case (base tab)
Peak Pulse Power (see
Figure 1
and
Figure 2)
UPT5Re3:
UPT5e3 thru UPT48e3:
UPT8Re3 thru UPT48Re3:
UPTB5e3 thru UPTB48e3:
Rated Average Power Dissipation
o
(base tab < 112 C)
Impulse Repetition Rate (duty factor)
Solder Temperature @ 10 s
Notes:
1. When mounted on FR4 PC board with 1 oz copper.
(1)
Symbol
T
J
/
T
STG
R
ӨJA
R
ӨJC
P
PP
Value
-65 to +150
240
15
@ 8/20 µs @10/1000µs
600
100
1000
150
1000
150
1000
150
2.5
0.01
260
Unit
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
C/W
o
C/W
W
P
M(AV)
W
%
C
T
SP
o
RF01103, Rev. A (4/5/13)
©2013 Microsemi Corporation
Page 1 of 5
UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3
and UPTB5e3 – UPTB48e3
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0.
TERMINALS: Annealed matte-tin plating over copper and readily solderable per MIL-STD-750, method 2026.
MARKING:
Anode to TAB 1:
T plus the last two digits of part number underlined, e.g. UPT5e3 is T05▪, UPT12e3 is T12▪
Cathode to TAB1:
U plus last two digits of part number underlined, e.g. UPT5Re3 is U05▪, UPT12Re3 is U12▪
Bipolar:
B plus the last two digits of part number underlined, e.g. UPTB8e3 is B08▪, UPTB12e3 is B12▪, etc.
Please note dot suffix (for e3 suffix)
POLARITY: Cathode or anode to TAB 1 (bottom) as described in marking above and on
last page.
TAPE & REEL option: Standard per EIA-481-B using 12 mm tape. Consult factory for quantities.
WEIGHT: Approximately 0.016 gram.
See
package dimensions
on last page.
PART NOMENCLATURE
Applicable to unidirectional UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3 only:
UPT 8
Powermite
Rated Standoff
Voltage
R
(e3)
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Polarity
Blank = Anode to Case Bottom
R = Cathode to Case Bottom
Applicable to bidirectional UPTB5e3 – UPTB48e3 only:
UPT
Powermite
Bi-directional
B
8
(e3)
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Rated Standoff Voltage
Symbol
V
(BR)
V
WM
P
PP
I
D
I
PP
C
SYMBOLS & DEFINITIONS
Definition
Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
Peak Pulse Power: The peak power that can be applied for a specified pulse width and waveform.
Standby Current: The maximum current that will flow at the specified voltage and temperature.
Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform.
Capacitance: The capacitance in picofarads of the TVS as defined @ 0 volts at a frequency of 1 MHz.
RF01103, Rev. A (4/5/13)
©2013 Microsemi Corporation
Page 2 of 5
UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3
and UPTB5e3 – UPTB48e3
ELECTRICAL CHARACTERISTICS
RATED
STANDOFF
VOLTAGE
V
WM
Unidirectional
UPT5
UPT5R
UPT8 & UPT8R
UPT10 & UPT10R
UPT12 & UPT12R
UPT15 & UPT15R
UPT17 & UPT17R
UPT24 & UPT24R
UPT28 & UPT28R
UPT33 & UPT33R
UPT48 & UPT48R
Bi-directional
UPTB5
UPTB8
UPTB10
UPTB12
UPTB15
UPTB17
UPTB24
UPTB28
UPTB33
UPTB48
V
5
5
8
10
12
15
17
24
28
33
48
MINIMUM
BREAKDOWN
VOLTAGE
V
(BR)
@ 1 mA
V
6.0
6.0
9.0
11.0
13.8
16.7
19.0
28.4
31.0
36.8
54.0
MAXIMUM
STANDBY
CURRENT
MAXIMUM PEAK
PULSE
CURRENT*
I
PP
@ 10/1000
µs
A
15.7
10.5
10.9
8.33
6.94
5.77
5.14
3.47
3.13
2.65
1.78
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ I
PP
V
9.5
9.5
13.7
18.0
21.6
26.0
29.2
43.2
47.8
56.7
84.3
MAXIMUM
TEMPERATURE
COEFFICIENT
of V
(BR)
DEVICE TYPE
I
D
@ V
WM
µA
50
5
2
2
1
1
1
1
1
1
1
α
V(BR)
%/
o
C
0.030
0.030
0.040
0.045
0.050
0.055
0.060
0.070
0.075
0.080
0.090
* See
figure 1
for I
PP
waveform of 10/1000
µs test pulse
.
RF01103, Rev. A (4/5/13)
©2013 Microsemi Corporation
Page 3 of 5
UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3
and UPTB5e3 – UPTB48e3
GRAPHS
l
P
– PULSE CURRENT – (% of I
PP
)
tp: Pulse duration is defined as
that point where current decays
to 50% of I
PP
and tr = 10 µs
P
PP
– PEAK PULSE POWER – (W)
EXPONENTIAL PULSE
(Pulse time duration is defined as
that point where the pulse current
decays to 50% of I
PP
.)
t – TIME – (ms)
tp – PULSE TIME
FIGURE 1
Pulse Waveform for 10/1000
µs
Exponential Surge
FIGURE 2
Peak Pulse Power vs. Pulse Duration
P
PP
– PEAK PULSE POWER – (% OF 25
o
C RATING)
CAPACITANCE – (pF)
measured at zero bias
measured at V
WM
TEMPERATURE – (
o
C)
V
WM
– STAND-OFF VOLTAGE – (V)
FIGURE 3
Derating Curve
FIGURE 4
Typical Capacitance vs. Stand-Off Voltage
RF01103, Rev. A (4/5/13)
©2013 Microsemi Corporation
Page 4 of 5
UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3
and UPTB5e3 – UPTB48e3
PACKAGE DIMENSIONS
Ltr
A
B
C
D
E
F
G
H
I
J
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.029 0.039
0.73
0.99
0.016 0.026
0.40
0.66
0.070 0.080
1.77
2.03
0.087 0.097
2.21
2.46
0.020 0.030
0.50
0.76
0.051 0.061
1.29
1.54
0.021 0.031
0.53
0.78
0.004 0.008
0.10
0.20
0.070 0.080
1.77
2.03
0.035 0.045
0.89
1.14
PAD LAYOUT
Ltr
A
B
C
D
E
Dimensions
Inch
Millimeters
0.100
2.54
0.105
2.67
0.050
1.27
0.030
0.76
0.025
0.64
RF01103, Rev. A (4/5/13)
©2013 Microsemi Corporation
Page 5 of 5
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