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US1B

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
1 A, 100 V, 硅, 信号二极管, DO-214交流

器件类别:半导体    分立半导体   

厂商名称:SUNMATE

厂商官网:http://www.sunmate.tw/

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器件:US1B

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器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
塑料, SMA, 2 PIN
状态
DISCONTINUED
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
C BEND
端子涂层
锡 铅
端子位置
包装材料
塑料/环氧树脂
结构
单一的
二极管元件材料
二极管类型
信号二极管
反向恢复时间最大
0.0500 us
最大重复峰值反向电压
100 V
最大平均正向电流
1 A
文档预览
US1A - US1M
1.0A Surface Mount Ultra-Fast Rectifier
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
Diffused Junction
Ultra-Fast Recovery Time for High Efficiency
Low Forward Voltage Drop, High Current
Capability, and Low Power Loss
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
B
Dim
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
C
A
B
C
D
E
G
H
J
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Solder Plated Terminal - Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Mounting Position: Any
D
J
H
G
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance, Junction to Terminal
Operating and Storage Temperature Range
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
qJT
T
j,
T
STG
US1A
50
35
T
A
= 25°C unless otherwise specified
US1B
100
70
US1D
200
140
US1G
400
280
1.0
30
US1J
600
420
US1K
800
560
US1M
1000
700
Unit
V
V
A
A
1.0
1.3
5.0
100
50
20
30
-65 to +150
1.7
V
mA
75
10
ns
pF
°C/W
°C
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A.
1of2
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
I
O
, AVERAGE RECTIFIED CURRENT (A)
1.0
US1A - US1D
US1G
1.0
US1J - US1M
0.5
0.1
0
25
50
75
100
125
150
T
j
- 25
°
C
Pulse Width = 300
µ
s
0.01
0
0.4
0.8
1.2
1.6
2.0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
T
T
, TERMINAL TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
40
Single Half Sine-Wave
(JEDEC Method)
I
R
, INSTANTANEOUS REVERSE CURRENT (
µ
A)
1000
30
100
T
j
= 100
°
C
10
20
1.0
T
j
= 25
°
C
10
T
j
= 150
°
C
0.1
0
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
t
rr
+0.5A
50
NI (Non-inductive)
Device
Under
Test
10
NI
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
1.0
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
2of2
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参数对比
与US1B相近的元器件有:US1D、US1J、US1K、US1M、US1A、US1G。描述及对比如下:
型号 US1B US1D US1J US1K US1M US1A US1G
描述 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
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