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US1B

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
1 A, 100 V, 硅, 信号二极管, DO-214交流

器件类别:半导体    分立半导体   

厂商名称:SY

厂商官网:http://www.shunyegroup.com/

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器件:US1B

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器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
塑料, SMA, 2 PIN
状态
DISCONTINUED
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
C BEND
端子涂层
锡 铅
端子位置
包装材料
塑料/环氧树脂
结构
单一的
二极管元件材料
二极管类型
信号二极管
反向恢复时间最大
0.0500 us
最大重复峰值反向电压
100 V
最大平均正向电流
1 A
文档预览
US1A THRU US1M
SURFACE MOUNT ULTRA FAST RECTIFIER
Reverse Voltage -
50 to 1000 Volts
DO-214AC
Forward Current -
1.0 Ampere
FEATURES
0.087 (2.21)
0.070 (1.80)
0.110(2.80)
0.100(2.54)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Ultra fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed
250 C/10 seconds at terminals
A
MECHANICAL DATA
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.222(5.66)
0.194(4.93)
SMA
SMA(H)
A:
0.096(2.42)
0.078(1.98)
0.122(3.12)
0.110(2.82)
Case:
JEDEC DO-214AC molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.003
ounce, 0.093 grams
0.004 ounce, 0.111 grams SMA(H)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
US1A US1B
US1D US1G US1J
US1K US1M
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
50
1.0
30.0
1.4
5.0
50.0
75
15.0
50.0
-65 to +150
1.7
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
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RATINGS AND CHARACTERISTIC CURVES US1A THRU US1M
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
£PEAK FORWARD SURGE CURRENT,
AMPERES
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
25
0.6
20
0.4
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
15
0.2
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
1,000
T
J
=25 C
PULSE WIDTH=300
ms
1%DUTY CYCLE
10
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
100
1
TJ=100 C
10
0.1
US1A-US1D
US1G
US1J-US1M
0.01
0.2
0.6
1.0
1.4
1.8
2.0
1
TJ=25 C
0.1
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100
T
J
=25 C
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
100
JUNCTION CAPACITANCE, pF
10
10
1
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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参数对比
与US1B相近的元器件有:US1A、US1G、US1D、US1J、US1K、US1M。描述及对比如下:
型号 US1B US1A US1G US1D US1J US1K US1M
描述 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE
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