US2305
Unitpoower
P-Channel Enhancement Mode MOSFET
BV
DSS
D
▼
Simple Drive Requirement
▼
Small Package Outline
▼
Surface Mount Device
S
SOT-23
G
-20V
65mΩ
- 4.2A
R
DS(ON)
I
D
D
G
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Rating
- 20
± 12
-4.2
-3.4
-10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
90
Unit
℃/W
Data and specifications subject to change without notice
US2305
Unitpoower
Parameter
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-4.5A
V
GS
=-4.5V, I
D
=-4.2A
V
GS
=-2.5V, I
D
=-2.0A
V
GS
=-1.8V, I
D
=-1.0A
Min.
-20
-
-
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.1
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Max. Units
-
-
53
65
100
250
-
-
-1
-10
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
-
-
-
-
-
9
-
-
-
10.6
2.32
3.68
5.9
3.6
32.4
2.6
740
167
126
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=55
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-2.8A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
= ± 12V
I
D
=-4.2A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-4.2A
R
G
=6Ω,V
GS
=-10V
R
D
=3.6Ω
V
GS
=0V
V
DS
=-15V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
trr
Qrr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-1.2A, V
GS
=0V
I
S
=-4.2A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
27.7
22
Max. Units
-1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
US2305
40
36
Unitpoower
-5.0V
-4.0V
32
T
A
=25
o
C
30
T
A
=150
o
C
-5.0V
-4.0V
28
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
24
65mΩ
-3.0V
20
20
-3.0V
16
12
10
8
V
G
= -2.0V
0
0
2
4
6
8
10
V
G
= -2.0V
4
0
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
1.8
I
D
=-4.2A
T
A
=25
o
C
Normalized R
DS(ON)
120
1.6
I
D
= -4.2A
V
GS
= -4.5V
1.4
R
DS(ON)
(
Ω
)
1.2
80
1
0.8
40
0
1
2
3
4
5
6
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
100
10
1
1
-V
GS(th)
(V)
0.5
T
j
=150 C
-I
S
(A)
o
T
j
=25 C
o
0.1
2.01E+08
0.01
0
0.4
0.8
1.2
1.6
0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
US2305
12
10000
Unitpoower
f=1.0MHz
1000
I
D
= -4.2A
10
-V
GS
, Gate to Source Voltage (V)
V
DS
= -16V
8
65mΩ
Ciss
6
C (pF)
Coss
100
4
Crss
2
0
0
5
10
15
20
25
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
1ms
-I
D
(A)
1
0.05
P
DM
t
0.01
10ms
100ms
0.1
T
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 270℃/W
℃
0.01
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
1s
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
R
D
V
DS
D
TO THE
OSCILLOSCOPE
0.8 x RATED V
DS
D
V
DS
TO THE
OSCILLOSCOPE
0.75 x RATED V
DS
G
S
V
GS
R
G
G
S
-10 V
V
GS
-1~-3mA
I
G
I
D
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
