USB50803C(-A) – USB50824C(-A)
Available
Bidirectional Low Capacitance
TVSarray
DESCRIPTION
This USB50803C(-A) – USB50824C(-A) family of Transient Voltage Suppressor (TVS) arrays
comes in an SO-8 package and can provide protection to 2 bidirectional data or interface lines. It is
designed for use in applications where very low capacitance protection is required at the board
level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-2,
electrical fast transients (EFT) per IEC 61000-4-4 and secondary effects of lightning.
Using the schematic on the last page, pins 1 & 2 are tied together for the first protected line,
and pins 7 & 8 are tied together to ground. The same would occur for a second protected line
where pins 3 & 4 tied together and pins 5 & 6 tied together to the ground. These connections may
be switched in polarity since the electrical features are the same in each anti-parallel (opposite
facing) leg when the pins are tied together in this manner for bidirectional protection. The device
with an “-A” suffix is opposite in polarity for each pin-to-pin leg (see
schematics).
This provides no
functional difference for bidirectional TVS protection with the noted pins tied together as described
above. But the difference is significant if each leg is being used separately for unidirectional
applications.
These TVS arrays have a peak power rating of 500 watts for an 8/20
µsec
pulse. This array is
suitable for protection of sensitive circuitry such as TTL, CMOS DRAM’s, SRAM’s, HCMOS, HSIC
microprocessors, Universal Serial Bus (USB) and I/O transceivers.
SO-8 Package
Also available:
Unidirectional version
USB50803 – USB50824
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
Provides electrically isolated protection for up to 2 bidirectional lines.
Surge protection per IEC 61000-4-2 and IEC 61000-4-4.
UL 94V-0 flammability classification.
Ultra low capacitance; 3 pF per line pair.
Ultra low leakage current.
RoHS compliant versions available.
APPLICATIONS / BENEFITS
•
•
•
EIA-RS485 data rates: 5 Mbs
10 Base T Ethernet.
USB data rate: 900 Mbs
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Peak Pulse Power @ 8/20
µs
(see
figure 1)
Impulse Repetition Rate
Capacitance (f = 1 MHz) @ 0 V
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
P
PP
df
C
T
SP
Value
-55 to +150
500
< .01
3
260
Unit
ºC
W
%
pF
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01092-1, Rev. A (1/11/13)
©2013 Microsemi Corporation
Page 1 of 6
USB50803C(-A) – USB50824C(-A)
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Molded SO-8 surface mount.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating.
MARKING: Logo, device marking code (see electrical characteristics table), date code.
POLARITY: Pin #1 marked by dot on top of package.
TAPE & REEL option: Per EIA standard 481. Consult factory for quantities. Carrier tubes with a quantity of 95 pieces are
standard.
WEIGHT: Approximately 0.066 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
USB 5 08 03
USB Rated Product
P
PP
Rating (x 100 W)
8 Pin Package
Rated Standoff Voltage
(V
WM
)
(See
Electrical Characteristics
table)
C
-A
e3
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Opposite polarity of Non-A
suffix version in each leg
Bidirectional Designator
Symbol
V
WM
V
(BR)
V
C
I
D
C
SYMBOLS & DEFINITIONS
Definition
Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range.
Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a pulse
time of 20
µs.
Standby Current: Leakage current at V
WM.
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.
RF01092-1, Rev. A (1/11/13)
©2013 Microsemi Corporation
Page 2 of 6
USB50803C(-A) – USB50824C(-A)
ELECTRICAL CHARACTERISTICS
STAND-
OFF
VOLTAGE
V
WM
Volts
MAX
USB50803C
USB50803C-A
USB50805C
USB50805C-A
USB50812C
USB50812C-A
USB50815C
USB50815C-A
USB50824C
USB50824C-A
3C
U3CA
5C
U5CA
12C
U12CA
15C
U15CA
24C
U24CA
3.3
5.0
12.0
15.0
24.0
BREAKDOWN
VOLTAGE
V
BR
@1 mA
Volts
MIN
4
6.0
13.3
16.7
26.7
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(Figure
2)
Volts
MAX
8
10.8
19
24
43
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(Figure
2)
Volts
MAX
11
13
26
32
57
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
200
40
1
1
1
CAPACITANCE TEMPERATURE
COEFFICIENT
(f = 1 MHz)
OF V
BR
C
@0V
α
VBR
pF
MAX
3
3
3
3
3
mV/°C
MAX
-5
1
8
11
28
PART
NUMBER
DEVICE
MARKING*
* Device marking will have an “e3” suffix added for the RoHS compliant option, e.g. U3CAe3, 5Ce3, U12CAe3, 15Ce3, and U24CAe3.
NOTE:
Transient Voltage Suppressor (TVS) products are normally selected based on their standoff voltage Vwm. The selected
voltage should be equal to or greater than the peak operating voltage of the circuit to be protected.
RF01092-1, Rev. A (1/11/13)
©2013 Microsemi Corporation
Page 3 of 6
USB50803C(-A) – USB50824C(-A)
GRAPHS
P
PP
– Peak Pulse Power - W
t
p
- Pulse Duration - µs
FIGURE 1
Peak Pulse Power vs Pulse Time
I
PP
– Peak Pulse Current - %I
PP
t – Time in microseconds
FIGURE 2
Pulse Waveform
RF01092-1, Rev. A (1/11/13)
©2013 Microsemi Corporation
Page 4 of 6
USB50803C(-A) – USB50824C(-A)
PACKAGE DIMENSIONS
Ltr
A
B
C
D
F
G
J
K
L
P
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.188
0.197
4.77
5.00
0.150
0.158
3.81
4.01
0.053
0.069
1.35
1.75
0.011
0.021
0.28
0.53
0.0160 0.050
.041
1.27
0.050 BSC
1.27 BSC
0.006
0.010
0.15
0.25
0.004
0.008
0.10
0.20
0.189
0.206
4.80
5.23
0.228
0.244
5.79
6.19
PAD LAYOUT
1.
2. PAD LAYOUT:
3.
RF01092-1, Rev. A (1/11/13)
©2013 Microsemi Corporation
Page 5 of 6
