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USD520_03

75 A, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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USD520, USD520HR2, USD535, USD535HR2,
USD545, USD545HR2, USD550, USD550HR2
POWER SCHOTTKY RECTIFIERS
TM
SCOTTSDALE DIVISION
DESCRIPTION
This series of 75 Amp rated average forward current series of Schottky
barrier power rectifiers in 20 through 50 volt selections is ideally suited for
output rectifiers and catch diodes in low voltage power supplies. The
Microsemi high conductivity design, using a heavy copper top post and 4-
point crimp, ensures cool thermal operation and low dynamic impedance
with applicable heat sinking for peak repetitive forward currents up to 150
Amps at 50% duty cycle. This rugged DO-5 hermetically sealed design
absorbs stress that can otherwise damage glass-to-metal seals during
installation and operation. It is also available in a flexible top lead as
described herein.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
DO-5
WWW.
Microsemi
.
C O M
FEATURES
Very Low Forward Voltage (0.6V at 60A, 125 C)
Low Recovered Charge
Rugged Package Design (DO-5)
Low Reverse Current (<50mA at rated V
R
at
o
125 C)
Hermetically sealed
High Reliability Screening Option with HR2 Suffix
(ie. USD520HR2)
Available with Flexible Top Lead with F suffix to
part number
o
APPLICATIONS / BENEFITS
Output Schottky Rectifiers for Low Voltage Power
Supplies
Catch Diodes for Low Voltage Power Supplies
High Efficiency for Low Voltage Supplies
Robust Construction with Heavy Copper Top Post
and Four-Point Crimp
High Peak Operating Temperature
o
Low Thermal Resistance (0.8 C/W)
High Surge Current (1000A)
ABSOLUTE MAXIMUM RATINGS
DC Blocking Voltage V
R
: Same as V
RWM
(see below)
Peak Repetitive Forward Current I
FRM
: 150 A
o
@ T
C
= 115 C (Rated V
R
, Sq Wave, 20 kHz, 50 % Duty Cycle)
Average Forward Current, I
F(AV)
: 75 A @ T
C
= 115 C
Non-Repetitive Peak Surge Current (8.3 ms), I
FSM
: 1000 A
Peak Reverse Transient Current, I
RM
: 2 A
o
o
Storage Temperature Range, T
STG
: -55 C to +200 C
Operating Junction Temperature T
J(PK)
: 175 C
o
Thermal Resistance, Junction to Case, R
?JC
: 0.8 C/W
o
o
MECHANICAL AND PACKAGING
Industry Standard DO-5 (DO-203AB) Package with
11/16 inch Hex and 1/4-28 Threaded Stud
Hermetically Sealed Metal and Glass Case Body
Metal Surface Finish: Tin Plated
Weight: 16 grams (approximate)
Maximum Unlubricated Stud Torque: 30 inch pounds
Angular Orientation of Terminal Undefined
Marking: Part Number and Logo
Flexible Top Lead Option: Add an “F” Suffix to Part
Number (see mechanical specifications on page 3)
ELECTRICAL CHARACTERISTICS (T
CASE
= 25
o
C)
Working
Peak
Reverse
Voltage
V
RWM
20 V
35 V
45 V
50 V
Non
Repetitive
Peak
Reverse
Voltage
V
RSM
@
I
RM
24 V
42 V
54 V
60 V
Maximum
Forward
Voltage
V
F
@10 A,
o
25 C
@60 A,
o
25 C
@60 A,
o
125 C
0.60 V or
0.63 V with
flexible
lead option
USD520 thru USD550
Microsemi Part Number
Maximum Reverse
Current (
pulsed)*
I
R
@ V
RWM
@T
C
=
o
25 C
20 mA
@T
C
=
o
125 C
50
50
50
75
mA
mA
mA
mA
Maximum
Capacitance
@V
R
= 5.0 V
USD520
USD520HR2
USD535
USD535HR2
USD545
USD545HR2
USD550
USD550HR2
* Duty Cycle = 1%
0.50 V
0.68 V
4000 pF
Copyright
©
2003
02-03-2003 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
USD520, USD520HR2, USD535, USD535HR2,
USD545, USD545HR2, USD550, USD550HR2
POWER SCHOTTKY RECTIFIERS
TM
SCOTTSDALE DIVISION
OUTLINE AND CIRCUIT
WWW.
Microsemi
.
C O M
OPTIONAL HIGH RELIABILITY (HR2) SCREENING
USD520 thru USD550
SCREEN
1. High Temperature
2. Temperature Cycle
3. Hermetic Seal
a.
Fine Leak
b.
Gross Leak
4. Thermal Impedance
5. Interim Electrical Parameters
6. High Temperature Reverse Blocking
7. Final Electrical Parameters
MIL-STD-750
METHOD
1032
1051
1071
H, Helium
C, Liquid
3101
GO/NO GO
As Applicable
GO/NO GO
As Applicable
T=48 hrs, Tc=125°C with applicable bias conditions
As Applicable
CONDITIONS
24 Hours @ TA = 150 C
o
F, 20 Cycles, -55 to +150 C. No dwell required @
o
25 C, T>10 min. @ extremes
o
The following tests are performed on 100% of the devices.
Copyright
©
2003
02-03-2003 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
USD520, USD520HR2, USD535, USD535HR2,
USD545, USD545HR2, USD550, USD550HR2
POWER SCHOTTKY RECTIFIERS
TM
SCOTTSDALE DIVISION
MECHANICAL SPECIFICATIONS
A
B
C
D
E
F
G
H
J
K
L
M
N
INCHES
.225 +/- .005
.060 MIN.
.156 +/- .020
.156 MIN. FLAT
.667 DIA. MAX
.090 MAX
.677 +/- .010
.375 MAX.
.140 MIN. DIA.
1.000 MAX.
.450 MAX.
.438 +/- .015
.078 MAX.
MILLIMETERS
5.72 +/- 0.13
1.52 MIN.
3.96 +/- 0.51
3.96 MIN. FLAT
16.94 DIA. MAX.
2.29 MAX.
17.20 +/- 0.25
9.53 MAX.
3.56 MIN. DIA.
25.40 MAX.
11.43 MAX.
11.13 +/- 0.38
1.98 MAX.
WWW.
Microsemi
.
C O M
Notes:
1.
2.
3.
4.
Cathode is stud
Maximum unlubricated stud torque: 30 inch pounds.
Angular Orientation of terminal is undefined.
o
Maximum tension (90 ) anode terminal 15 pounds for 30
seconds
FLEXIBLE TOP LEAD (OPTIONAL) Add an “F” suffix to Part Number.
INCHES
.718 MAX
4.50 +/- .250
.525 MAX.
.675 +/- .035
.205 +/- .005
.075 +/- .010
1.125 MAX.
MILLIMETERS
18.24 MAX
114.3 +/- 6.35
13.23 MAX.
17.15 +/- 0.89
5.21 +/- 0.13
1.91 +/- 0.25
28.58 MAX.
M
N
P
Q
R
S
T
*To 125 C (Ambient)
Note:
Consult Factory for Non-standard Lead Lengths.
o
DO-5 with Flexible Lead
USD520 thru USD550
Copyright
©
2003
02-03-2003 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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参数对比
与USD520_03相近的元器件有:USD535HR2、USD545HR2、USD550HR2、USD520HR2。描述及对比如下:
型号 USD520_03 USD535HR2 USD545HR2 USD550HR2 USD520HR2
描述 75 A, SILICON, RECTIFIER DIODE 75 A, SILICON, RECTIFIER DIODE, DO-203AB 75 A, SILICON, RECTIFIER DIODE, DO-203AB 75 A, SILICON, RECTIFIER DIODE, DO-203AB 75 A, SILICON, RECTIFIER DIODE, DO-203AB
是否Rohs认证 - 不符合 不符合 不符合 -
零件包装代码 - DO-5 DO-5 DO-5 -
包装说明 - HERMETIC SEALED, METAL, DO-5, 1 PIN O-MUPM-D1 HERMETIC SEALED, METAL, DO-5, 1 PIN -
针数 - 1 1 1 -
Reach Compliance Code - unknow unknow unknow -
ECCN代码 - EAR99 EAR99 EAR99 -
应用 - EFFICIENCY EFFICIENCY EFFICIENCY -
外壳连接 - CATHODE CATHODE CATHODE -
配置 - SINGLE SINGLE SINGLE -
二极管元件材料 - SILICON SILICON SILICON -
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
最大正向电压 (VF) - 0.5 V 0.5 V 0.5 V -
JEDEC-95代码 - DO-203AB DO-203AB DO-203AB -
JESD-30 代码 - O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 -
JESD-609代码 - e0 e0 e0 -
最大非重复峰值正向电流 - 1000 A 1000 A 1000 A -
元件数量 - 1 1 1 -
相数 - 1 1 1 -
端子数量 - 1 1 1 -
最高工作温度 - 175 °C 175 °C 175 °C -
最大输出电流 - 75 A 75 A 75 A -
封装主体材料 - METAL METAL METAL -
封装形状 - ROUND ROUND ROUND -
封装形式 - POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT -
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
认证状态 - Not Qualified Not Qualified Not Qualified -
最大重复峰值反向电压 - 35 V 45 V 50 V -
表面贴装 - NO NO NO -
技术 - SCHOTTKY SCHOTTKY SCHOTTKY -
端子面层 - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
端子形式 - SOLDER LUG SOLDER LUG SOLDER LUG -
端子位置 - UPPER UPPER UPPER -
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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