SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16G48,USM16G48,SM16J48,USM16J48
SM16G48A,USM16G48A,SM16J48A,USM16J48A
AC POWER CONTROL APPLICATIONS
l
Repetitive Peak Off-State Voltage :V
DRM
=400, 600V
l
R.M.S On-State Current
l
Gate Trigger Current
:I
T (RMS)
=16A
:I
GT
=30mA Max.
:I
GT
=20mA Max. (“A”Type)
Unit in mm
SM16G48, SM16J48, SM16G48A, SM16J48A
USM16G48, USM16J48, USM16G48A, USM16J48A
JEDEC
JEITA
TOSHIBA
―
―
13-10J1A
JEDEC
JEITA
TOSHIBA
―
―
13-10J2A
Weight : 1.7g
MARKING
NUMBER
*1
*2
SYMBOL
SM16G48, SM16G48A, USM16G48, USM16G48A
TYPE SM16J48, SM16J48A, USM16J48, USM16J48A
SM16G48A,SM16J48A,USM16G48A,USM16J48A
MARK
M16G48
M16J48
A
*3
Example
8A : January 1998
8B : February 1998
8L : December 1998
1
2001-07-13
SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
MAXIMUM RATINGS
(Ta=25
°C
)
CHARACTERISTIC
(U)SM12G48
(U)SM12G48A
(U)SM12J48
(U)SM12J48A
SYMBOL
RATING
400
V
DRM
600
I
T (RMS)
I
TSM
I t
di /dt
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
2
UNIT
Repetitive Peak
Off-State Voltage
V
R.M.S On-State Current
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I t Limit Value
Critical Rate of Rise of On-State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
2
16
150 (50Hz)
165 (60Hz)
112.5
50
5
0.5
10
2
−40~125
−40~125
A
A
A s
A /
ms
W
W
V
A
°C
°C
2
Note 1 : V
DRM
=0.5×Rated
I
TM
≤25A
t
gw
≥10ms
t
gr
≤250ns
i
gp
=I
GT
×2.0
ELECTRICAL CHARACTERISTICS
(Ta=25
°C
)
CHARACTERISTIC
Repetitive Peak Off-State Current
I
Gate Trigger Voltage
II
III
IV
I
(U)SM16G48
(U)SM16J48
Gate Trigger
Current
(U)SM16G48A
(U)SM16J48A
II
III
IV
I
II
III
IV
Peak On-State Voltage
Gate Non-Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
Off-State Voltage
(U)SM16G48
(U)SM16J48
(U)SM16G48A
(U)SM16J48A
(U)SM16G48
(U)SM16J48
(U)SM16G48A
(U)SM16J48A
V
TM
V
GD
I
H
R
th (j-c)
I
TM
=17A
V
D
=Rated, Tc=125°C
V
D
=12V, I
TM
=1A
Junction to Case, AC
V
DRM
=Rated, T
j
=125°C
Exponential Rise
I
GT
V
D
=12V
R
L
=20W
V
GT
V
D
=12V
R
L
=20W
SYMBOL
I
DRM
TEST CONDITION
V
DRM
=Rated
T2 (+) , Gate (+)
T2 (+) , Gate (-)
T2 (-) , Gate (-)
T2 (-) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (-)
T2 (-) , Gate (-)
T2 (-) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (-)
T2 (-) , Gate (-)
T2 (-) , Gate (+)
MIN.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
0.2
―
―
―
―
10
4
TYP.
―
―
―
―
―
―
―
―
50
―
―
―
―
―
―
―
―
300
200
―
―
MAX.
20
1.5
1.5
1.5
―
30
30
30
―
20
20
20
―
1.5
―
50
2.0
―
V /
ms
―
―
V /
ms
―
―
V
mA
°C / W
mA
V
UNIT
mA
dv / dt
Critical Rate of Rise of
Off-State Voltage at
Commutation
(dv / dt) c
V
DRM
=400V, T
j
=125°C
(di / dt) c=−8.7A / ms
2
2001-07-13
SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
3
2001-07-13
SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
4
2001-07-13
SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A
RESTRICTIONS ON PRODUCT USE
000707EAA
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
5
2001-07-13
瑞萨电子MCU
