Standard Products
UT54BS32245 32bit Bus Switch
Preliminary Datasheet
May 2015
www.aeroflex.com/busswitch
FEATURES
□ Provides cold-sparing capability without the need for actual
cold-sparing multiplexer inputs
□ Bidirectional Operation
□ 3.3 V operating power supply with typical 11Ω switch
connection between ports
□ 5.0V operating power supply typical 5Ω switch connection
between ports
□ Isolates non cold-spared devices from an active bus
□ Ultra low power CMOS technology
□ ESD Rating HBM: 2000V, Class 2
□ Operational environment:
- Total-dose: up to 300 krad(Si)
- Latchup immune (LET <= 100 MeV-cm
2
/mg)
□ Packaging options:
- 99-lead CCGA, CLGA, CBGA
□ Standard Microcircuit Drawing (SMD)
- QML Q and V pending
INTRODUCTION
The UT54BS32245 provides 32 bits of high-speed CMOS-
compatible bus switching. The low on-state resistance of the
switch allows connections to be made with minimal
propagation delay. The device is organized as four 8-bit bus
switches, two 16-bit bus switches, or one 32-bit bus switch.
When output enable (/EN) is low, the switch is on and port A is
connected to port B. When /EN is high, the switch is open and
the high-impedance state exists between the two ports.
APPLICATIONS INFORMATION
Memory Interface
- Solution for multiple memory devices on a bus
Bus Isolation
- Ability to electrically isolate a device, or banks of
devices, from memory bus or ADC output when not
needed
- Enables bank switching for redundancy or device failure
- Provides cold-sparing capability without the need for
actual cold-sparing buffers
Redundancy
- Allows multiple non cold-spare devices to be present
on a bus
Supports Analog Applications
- In voltage range: 3.0 to 3.6V or 4.5 to 5.5V
- Signal isolation: -60dB
- Bandwidth (3dB): 500 MHz
1A1
1B1
2A1
2B1
3A1
3B1
4A1
4B1
1A8
1B8
2A8
2B8
3A8
3B8
4A8
4B8
/EN1
/EN2
/EN3
/EN4
Figure 1. UT54BS32245 Block Diagram
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Aeroflex Microelectronic Solutions - HiRel
1
2
3
4
5
6
7
8
9
10
A
B
C
D
E
F
G
H
J
K
3A1
3A7
3A8
3A5
3A6
2A7
2A5
2A6
2A8
VSS
VDD
3B1
3B2
3B4
2B7
2B5
2B8
VDD
2A3
3A2
3B5
/OE3
3B3
VSS
VSS
2B6
/OE2
2B4
2A4
3A4
3B6
3B7
NC
VDD
VDD
NC
2B3
2B2
2A2
3A3
3B8
VSS
VDD
VSS
VSS
VDD
VSS
2B1
2A1
4A1
4B1
VSS
VDD
VSS
VSS
VDD
VSS
1B8
1A3
4A2
4B2
4B3
VSS
VDD
VDD
NC
1B7
1B6
1A4
4A4
4B4
/OE4
4B6
VSS
VSS
1B3
/OE1
1B5
1A2
4A3
VDD
4B8
4B5
4B7
1B4
1B2
1B1
VDD
1A1
VSS
4A8
4A7
4A5
4A6
1A6
1A5
1A8
1A7
VSS
Figure 2. UT54BS32245 Pinout
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PIN DESCRIPTION
Pin No.
A2, A3, A4, A5, A6, A7, A8, A9,
B1, B10, C1, C10, D1, D10, E1,
E10, F1, F10, G1, G10, H1, H10,
J1, J10, K2, K3, K4, K5, K6, K7,
K8, K9
B3, B4, B5, B6, B7, B8, C2, C4,
C7, C9, D2, D3, D8, D9, E2, E9,
F2, F9, G2, G3, G8, G9, H2, H4,
H7, H9, J3, J4, J5, J6, J7, J8
C3, C8, H3, H8
A10, D4, D7, C5, C6, E3, E5, E6,
E8, F3, F5, F6, F8, G4, H5, H6, K1,
K10
B2, B9, D5, D6, E4, E7, F4, F7, G5,
G6, G7, J2, J9
Name
nAn
Description
Port A pins
nBn
Port B pins
/ENn
VSS
VDD
Active LOW enable pin
Ground Pin
Supply Pin, +3.3V –or- +5.0V
TRUTH TABLE
INPUT (/EN)
L
A port to B port
-or-
B port to A port
DISCONNECT
Function
H
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ABSOLUTE MAXIMUM RATINGS
1
Symbol
V
DD 2
V
I2
I
CCC
P
D3
T
J
Ө
JC
T
STG
ESD
Parameter
Positive Output Supply Voltage
Voltage on an Input pin during operation
Continuous DC Channel Current
Maximum package power dissipation
permitted at T
C
=125°C
Junction Temperature
Thermal resistance, junction-to-case
Storage Temperature
ESD protection (Human Body Model) Class 2
MIN
-0.5
MAX
7.2
V
DD
+
0.3V
65
1.6
+150
15
Unit
V
V
mA
W
°C
°C/W
°C
V
-65
+150
2000
Notes:
1. Permanent device damage may occur if absolute maximum ratings are exceeded. Functional
operation should be restricted to recommended operating conditions. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability and performance.
2. All voltages referenced to VSS
3. Per MIL-STD-883, method 1012.1, section 3.4.1, PD=(Tj(max) - Tc(max)) / Өjc
4.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
IN
T
C
t
R
t
F
1
1
Parameter
Positive Output Supply Voltage
Input Voltage on any pin
Case Temperature Range
Rise time
Fall time
LIMIT
3.0 to 3.6 or 4.5 to 5.5
0.0 to V
DD
-55 to +125
>5
>5
60
Unit
V
V
°C
ns
ns
mA
I
CCC
Continuous DC Channel Current
Notes:
1.
All voltages referenced to VSS
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OPERATIONAL ENVIROMENT
PARAMETER
Total Ionizing Dose (TID)
Single Event Latchup (SEL)
LIMIT
3.0E5
>100
UNITS
rad(Si)
MeV-cm2/mg
DC CHARACTERISTICS
*,1
(V
DD
= 5.0V ± 0.5V, 3.3V ± 0.3V, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the
temperature range ordered
Symbol
V
IH
V
IL
I
ID
I
IA
I
DD
I
DDQ
Parameter
High level input voltage
Low level input voltage
Leakage current digital
Leakage current analog
Active Supply Current
Quiescent Supply
Current
Input Capacitance (/EN)
I/O Capacitance when
device OFF
Condition
V
DD
=3.6V, 5.5V
V
DD
=3.0V, 4.5V
V
DD
= MAX;
V
I
= V
DD
or V
SS
V
DD
= MAX;
V
I
= V
DD
or V
SS
V
DD
=3.6V, 5.5V
V
DD
= MAX;
I
O
= 0mA;
V
I
= V
DD
or V
SS
V
I
= V
DD
or VSS
V
DD
= MAX
V
O
= V
DD
or VSS
V
I
= V
DD
/2
/EN = V
DD
V
DD
= MAX
V
O
= open
V
I
= V
DD
/2
/EN = 0V
V
DD
= 4.5V
V
I
= VSS
V
DD
= 3.0V
V
I
= VSS
I
O
= 30mA
I
O
= 15mA
I
O
= 30mA
I
O
= 15mA
MIN
0.7*V
DD
MAX
0.3*V
DD
Unit
V
V
µA
µA
mA/MHz
µA
pF
pF
-1
-3
1
3
0.5
15
5
5
C
I
C
IO(OFF)
C
IO(ON)
I/O Capacitance when
device ON
16
pF
R
ONL 2,3
Resistance through
switch
10
13
10
13
Ω
Ω
R
ON(Flat)
1,2
Switch On Resistance
V
DD
=3.0V,4.5V
V
I
= V
DD
V
DD
=3.0V
V
I
= V
DD
/2
I
O
= -30mA
I
O
= -15mA
5
6
10
13
Ω
Ω
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