FET BIAS CONTROLLER WITH POLARISATION
SWITCH AND TONE DETECTION
ISSUE 1 - OCTOBER 1998
DEVICE DESCRIPTION
The ZNBG series of devices are designed to
meet the bias requirements of GaAs and
HEMT FETs commonly used in satellite
receiver LNBs, PMR cellular telephones etc.
with a minimum of external components.
With the addition of two capacitors and a
resistor the devices provide drain voltage and
current control for three external grounded
source FETs, generating the regulated
negative rail required for FET gate biasing
whilst operating from a single supply. This
negative bias, at -3 volts, can also be used to
supply other external circuits.
The ZNBG3113/14 includes bias circuits to
drive up to three external FETs. A control
input to the device selects either one of two
FETs as operational, the third FET is
p e r m a n e n t l y a ct i v e . T hi s f e a t u r e i s
particularly used as an LNB polarisation
switch. Also specific to LNB applications is
the 22kHz tone detection and logic output
feature which is used to enable high and low
band frequency switching.
The facility to control the tone switching
delay is provided. This allows the rejection
of other lower frequency tones tat may be
present in multiple LNB applications.
ZNBG3113
ZNBG3114
Drain current setting of the ZNBG3113/14 is
user selectable over the range 0 to 15mA, this
is achieved with addition of a single resistor.
The series also offers the choice of drain
voltage to be set for the FETs, the 3113 gives
2.2 volts drain whilst the 3114 gives 2 volts.
These devices are unconditionally stable
over the full working temperature with the
FETs in place, subject to the inclusion of the
recommended gate and drain capacitors.
These ensure RF stability and minimal
injected noise.
It is possible to use less than the devices full
complement of FET bias controls, unused
drain and gate connections can be left open
circuit without affecting operation of the
remaining bias circuits.
To protect the external FETs the circuits have
been designed to ensure that, under any
conditions including power up/down
transients, the gate drive from the bias
circuits cannot exceed the range -3.5V to 1V.
Furthermore if the negative rail experiences
a fault condition, such as overload or short
circuit, the drain supply to the FETs will shut
down avoiding excessive current flow.
The ZNBG3113/14 are available in QSOP20
for the minimum in device size. Device
operating temperature is -40 to 70°C to suit
a wide range of environmental conditions.
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
•
•
Provides bias for GaAs and HEMT FETs
Drives up to three FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator
requires only 2 external capacitors
Choice in drain voltage
Wide supply voltage range
Polarisation switch for LNBs
22KHz tone detection for band
switching
Programmable tone delay
Compliant with ASTRA control
specifications
QSOP surface mount package
4-123
•
•
•
Satellite receiver LNBs
Private mobile radio (PMR)
Cellular telephones
ZNBG3113
ZNBG3114
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
Supply Current
Input Voltage (V
POL
)
Drain Current (per FET)
(set by R
CAL
)
Operating Temperature
Storage Temperature
-0.6V to 12V
100mA
25V Continuous
0 to 15mA
-40 to 70°C
-50 to 85°C
Power Dissipation (T
amb
=
25°C)
QSOP20
500mW
ELECTRICAL CHARACTERISTICS. TEST CONDITIONS
Ω
(Unless otherwise stated):T
amb
=
25°C,V
CC
=5V,I
D
=10mA (R
CAL
=33kΩ)
SYMBOLPARAMETER
CONDITIONS
MIN.
V
CC
I
CC
Supply Voltage
Supply Current
I
D1
to I
D3
=0
I
D1
=0,I
D2
to I
D3
=10mA, V
POL
=14V
I
D2
=0,I
D1
to I
D3
=10mA, V
POL
=15.5V
I
D1
to I
D3
=0, I
LB
=10mA
I
D1
to I
D3
=0, I
HB
=10mA
-3.0
5
LIMITS
TYP.
MAX.
10
15
35
35
45
45
-2.5
-2.4
V
mA
mA
mA
mA
mA
V
V
UNITS
V
SUB
-3.5
Substrate Voltage (Internally generated) I
SUB
=0
I
SUB
=-200µA
Output Noise
Drain Voltage
Gate Voltage
Oscillator
Frequency
C
G
=4.7nF, C
D
=10nF
C
G
=4.7nF, C
D
=10nF
200
E
ND
E
NG
f
O
0.02
Vpkpk
0.005 Vpkpk
350
800
kHz
4-124
ZNBG3113
ZNBG3114
SYMBOLPARAMETER
CONDITIONS
MIN.
LIMITS
TYP.
MAX.
µA
UNITS
GATE CHARACTERISTICS
I
GO
Output Current
Range
I
Dx
(mA)
V
G1O
V
G1L
V
G1H
V
G2O
V
G2L
V
G2H
V
G3L
V
G3H
I
D
I
DV
I
DT
V
D1
Output Voltage
Gate 1
Off
Low
High
Output Voltage
Gate 2
Off
Low
High
Output Voltage
Gate 3
Low
High
V
POL
(V)
I
GOx
(µA)
µ
-2.7
-2.7
0.4
-2.7
-2.7
0.4
-3.5
0.4
-2.4
-2.4
0.75
-2.4
-2.4
0.75
-2.9
0.75
-2.0
-2.0
1.0
-2.0
-2.0
1.0
-2.0
1.0
V
V
V
V
V
V
V
V
-30
2000
I
D1
=0 V
POL
=14 I
GO1
=-10
I
D1
=12 V
POL
=15.5 I
GO1
=-10
I
D1
=8 V
POL
=15.5 I
GO1
=0
I
D2
=0 V
POL
=15.5 I
GO2
=-10
I
D2
=12 V
POL
=14 I
GO2
=-10
I
D2
=8 V
POL
=14 I
GO2
=0
I
D3
=12
I
D3
=8
I
GO3
=-10
I
GO3
=0
DRAIN CHARACTERISTICS
Current
Current Change
with V
CC
with T
j
Drain 1 Voltage:
High
ZNBG3113
ZNBG3114
Drain 2 Voltage:
High
ZNBG3113
ZNBG3114
Drain 3 Voltage:
High
ZNBG3113
ZNBG3114
Voltage Change
with V
CC
with T
j
Leakage Current
Drain 1
Drain 2
V
CC
= 5 to 10V
T
j
=-40 to +70°C
8
10
0.2
0.05
12
mA
%/V
%/°C
I
D1
=10mA, V
POL
=15.5V
I
D1
=10mA, V
POL
=15.5V
2.0
1.8
2.2
2.0
2.4
2.2
V
V
V
D2
I
D2
=10mA, V
POL
=14V
I
D2
=10mA, V
POL
=14V
2.0
1.8
2.2
2.0
2.4
2.2
V
V
V
D3
I
D3
=10mA, V
POL
=15.5V
I
D3
=10mA, V
POL
=15.5V
V
CC
= 5 to 10V
T
j
=-40 to +70°C
V
D1
=0.1V, V
POL
=14V
V
D2
=0.1V, V
POL
=15.5V
4-125
2.0
1.8
2.2
2.0
0.5
50
2.4
2.2
V
V
%/V
ppm
V
DV
V
DT
I
L1
I
L2
10
10
µA
µA
ZNBG3113
ZNBG3114
SYMBOLPARAMETER
CONDITIONS
MIN.
LIMITS
TYP.
MAX.
UNITS
TONE DETECTION CHARACTERISTICS
I
B
V
OUT
I
OUT
G
V
V
OUT
I
LEAK
V
TH
Filter Amplifier
Input Bias Current
Output Voltage
5
Output Current
5
Voltage Gain
Rectifier
Output Voltage
5
R
F1
=150kΩ
R
F1
=150kΩ
V
OUT
=1.96V, V
FIN
=2.1V
f=22kHz,V
IN
=1mV
R
F1
=150kΩ I
L
=-10µA
1.8
0.04
1.75
400
0.15
1.95
520
46
2.0
20
2.2
200
1.0
2.05
650
µA
V
µA
dB
V
nA
Leakage Current
5
R
F1
=150kΩ V
OUT
=3V
Comparator
Threshold
Voltage
5
Output Stage
L
OV
Volt. Range
L
OV
Bias Current
L
B
Output Low
L
B
Output High
H
B
Output Low
H
B
Output High
f=0
I
L
=50mA(L
B
or H
B
)
V
LOV
=0
V
LOV
=0 I
L
=-10µA
V
LOV
=3V I
L
=0
V
LOV
=0 I
L
=10mA
V
LOV
=3V I
L
=50mA
V
LOV
=0 I
L
=-10µA
V
LOV
=3V I
L
=0
V
LOV
=0 I
L
=10mA
V
LOV
=3V I
L
=50mA
Enabled
6
Enabled
7
Disabled
6
Disabled
7
Enabled
6
Enabled
7
Disabled
6
Disabled
7
2.95
-0.5
0.04
-3.5
-0.01
3.2
3.45
V
V
LOV
I
LOV
V
LBL
V
LBH
V
HBL
V
HBH
V
CC
-1.8 V
0.15
-2.75
0
1.0
-2.5
0.01
µA
V
V
-0.025 0
2.9
3.0
-3.5
-0.01
-2.75
0
0.025 V
3.1
V
-2.5
0.01
V
V
-0.025 0
2.9
3.0
0.025 V
3.1
V
µA
V
ms
POLARITY SWITCH CHARACTERISTICS
I
POL
V
TPOL
T
SPOL
NOTES:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, C
NB
and C
SUB
, of
47nF are required for this purpose.
2. The characteristics are measured using an external reference resistor R
CAL
of value 33k wired from pins R
CAL
to ground.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all outputs. C
G
, 4.7nF, are connected between
gate outputs and ground, C
D
, 10nF, are connected between drain outputs and ground.
5 . These parameters are lneearly related to V
CC
6. These parameters are measured using Test Circuit 1
7. These parameters are measured using Test Circuit 2
Input Current
Threshold
Voltage
Switching Speed
V
POL
=25V (Applied via R
POL
=10kΩ) 10
14
V
POL
=25V (Applied via R
POL
=10kΩ)
V
POL
=25V (Applied via R
POL
=10kΩ)
20
40
14.75 15.5
100
4-126
ZNBG3113
ZNBG3114
TEST CIRCUIT 1
V2 Characteristics
Type
AC source
Frequency
22kHz
Voltage
350mV p/p enabled
100mV p/p disabled
TEST CIRCUIT 2
V2 Characteristics
Type
AC source
Frequency
22kHz
Voltage
350mV p/p enabled
100mV p/p disabled
4-127
