V20DM120C-M3, V20DM120CHM3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.55 V at I
F
= 5 A
Dual Trench MOS Barrier Schottky Rectifier
TMBS
®
eSMP
®
Series
TO-263AC (SMPD)
K
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
1
2
Top View
Bottom View
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
V20DM120C
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, inductrial, and
automotive application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A (T
A
= 125 °C)
T
J
max.
Package
Diode variations
2 x 10 A
120 V
120 A
0.65 V
150 °C
TO-263AC (SMPD)
Dual common cathode
MECHANICAL DATA
Case:
TO-263AC SMPD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity:
As marked
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
V
RRM
V20DM120C
120
20
A
10
120
10 000
-40 to +150
A
V/μs
°C
UNIT
V
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Revision: 06-Feb-15
Document Number: 89989
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V20DM120C-M3, V20DM120CHM3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 5 A
Instantaneous forward voltage per diode
I
F
= 10 A
I
F
= 5 A
I
F
= 10 A
V
R
= 90 V
Reverse current at rated V
R
per diode
V
R
= 120 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
5 ms
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
SYMBOL
TYP.
0.65
0.85
0.55
0.65
23
1.6
-
3
MAX.
-
0.93
-
0.73
-
-
600
20
μA
mA
μA
mA
V
UNIT
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
per diode
Typical thermal resistance
per device
per device
SYMBOL
R
JC
R
JA
(1)(2)
V20DM120C
2.8
1.5
48
UNIT
°C/W
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2)
Free air, without heatsink
ORDERING INFORMATION
(Example)
PACKAGE
TO-263AC (SMPD)
TO-263AC (SMPD)
Note
(1)
AEC-Q101 qualified
PREFERRED P/N
V20DM120C-M3/I
V20DM120CHM3/I
(1)
UNIT WEIGHT
PACKAGE CODE BASE QUANTITY
(g)
0.55
0.55
I
I
2000/reel
2000/reel
DELIVERY MODE
13" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
24
22
20
18
16
14
12
10
8
6
4
2
0
0
9
Average Forward Rectified Current (A)
R
thJC
= 1.5 °C/W
8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
Average Power Loss (W)
7
6
5
4
3
2
1
0
0
1
2
3
4
D = 1.0
R
thJA
= 48 °C/W
T
D = t
p
/T
t
p
25
50
75
100
125
150
5
6
7
8
9
10 11 12
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 06-Feb-15
Document Number: 89989
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V20DM120C-M3, V20DM120CHM3
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
100
Junction to Ambient
100
Instantaneous Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
T
A
= 100 °C
1
T
A
= 25 °C
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
Instantaneous Reverse Current (mA)
100
50
Thermal Resistance (°C/W)
10
1
0.1
0.01
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
45
40
35
30
25
Epoxy printed circiut
board FR4 copper
thickness = 70 μm
T
A
= 25 °C
0.001
0.0001
10
20
30
40
50
60
70
80
90
100
S(cm2)
20
1
2
3
4
5
6
7
8
9
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Copper Pad Areas (cm
2
)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
10 000
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p
-p
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 06-Feb-15
Document Number: 89989
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V20DM120C-M3, V20DM120CHM3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Vishay General Semiconductor
TO-263AC (SMPD)
Mounting Pad Layout
Revision: 06-Feb-15
Document Number: 89989
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000