V23990-K420-A40-PM
MiniSKiiP® 3 PIM
Features
●
Solderless interconnection
●
Trench Fieldstop IGBT4 technology
1200V/100A
MiniSKiiP
®
3 housing
Target Applications
●
Industrial Motor Drives
Schematic
Types
●
V23990-K420-A40-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°
C
2
1600
DC current
T
h
=80°
C
91
500
T
j
=25°
C
1250
99
150
V
A
A
A
2
s
W
°
C
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
=150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
h
=80°
C
1200
88
300
198
±20
10
800
175
V
A
A
W
V
µs
V
°
C
copyright Vincotech
1
Revision: 2.1
V23990-K420-A40-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Repetitive peak reverse voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
h
=80°
C
1200
70
300
144
175
V
A
A
W
°
C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12.7
min 12.7
V
mm
mm
copyright Vincotech
2
Revision: 2.1
V23990-K420-A40-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
D8,D9,D10,D11,D12,D13
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50µm
λ=1W/mK
1500
35
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
0,8
0,97
0,88
0,85
0,71
0,0035
0,0047
1,35
V
V
0,1
1,1
0,7
mA
Thermal resistance chip to heatsink per chip
R
thJH
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50µm
λ=1W/mK
±15
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=4
Rgon=4
V
CE
=V
GE
15
0
20
1200
0
0,0038
100
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
5
1,6
5,8
1,92
2,33
6,5
2,2
0,12
600
V
V
mA
nA
7,5
±15
600
100
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
204
216
35
42
296
384
78
112
7,83
12,12
5,72
9,25
6150
405
345
800
ns
mWs
pF
nC
Thermal resistance chip to heatsink per chip
R
thJH
0,48
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
Rgon=4
±15
600
100
100
di(rec)max
/dt
Erec
Thermal grease
thickness≤50µm
λ=1W/mK
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
1,5
2,47
2,46
68,3
91,3
267
455
5,69
15,08
2761
977
1,87
5,42
0,66
2,7
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
K/W
copyright Vincotech
3
Revision: 2.1
V23990-K420-A40-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Thermistor
Rated resistance
Deviation of R100
R100
Power dissipation constant
A-value
B-value
Vincotech NTC Reference
B(25/50) Tol. %
B(25/100) Tol. %
R
∆R/R
P
R100=1670
T=25°
C
T=100°
C
T=100°
C
T=25°
C
T=25°
C
T=25°
C
7,635*10-3
1,731*10-5
E
-3
1670,313
mW/K
1/K
1/K²
1000
3
%
copyright Vincotech
4
Revision: 2.1
V23990-K420-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
300
I
C
(A)
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
300
T1,T2,T3,T4,T5,T6,T7 IGBT
250
250
200
200
150
150
100
100
50
50
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
100
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
300
I
F
(A)
D1,D2,D3,D4,D5,D6,D7 FWD
T
j
= 25°
C
250
80
200
60
150
40
100
T
j
= T
jmax
-25°
C
20
T
j
= T
jmax
-25°
C
T
j
= 25°
C
50
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
1
2
3
4
V
F
(V)
5
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright Vincotech
5
Revision: 2.1
