V23990-P589-A31-PM
preliminary datasheet
flowPIM 1 3rd gen
Features
●
3~ rectifier, BRC, Inverter, NTC
●
Very compact housing, easy to route
●
IGBT2 phantom speed / EmCon4 technology
●
Lower losses than IGBT3 or 4 for f
sw
> 8kHz
1200V / 25A
flowPIM1 housing
Target Applications
●
Motor Drives with 8kHz < f
sw
< 30kHz
●
Low audible noise applications (f
sw
> 16kHz)
●
High efficiency applications
●
Centered aircon, fans, pumps
Schematic
Types
●
V23990-P589-A31-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Peak repetitive reverse voltage
DC forward current
Surge forward current
I t-value
Power dissipation per diode
Maximum junction temperature
2
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°C
2
1600
T
j
=T
j
max
T
h
=80°C
36
320
T
j
=45°C
510
40
150
V
A
A
A
2
s
W
°C
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Maximum junction temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
1200
27
75
67
±20
150
V
A
A
W
V
°C
copyright Vincotech
1
Revision: 1
V23990-P589-A31-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak repetitive reverse voltage
DC forward current
Repetitive peak forward current
Power dissipation per diode
Maximum junction temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
1200
21
50
37
175
V
A
A
W
°C
Brc Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum junction temperature
V
CE
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
1200
V
A
A
W
V
μs
V
°C
15
45
39
±20
10
800
175
Brc Diode
Peak repetitive reverse voltage
DC forward current
Repetitive peak forward current
Power dissipation per diode
Maximum junction temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
1200
V
A
A
W
°C
10
20
21
175
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12.7
min 12.7
V
mm
mm
copyright Vincotech
2
Revision: 1
V23990-P589-A31-PM
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
V
to
r
t
I
r
R
thJH
R
thJC
Thermal grease
thickness≤50μm
λ=0.61W/mK
1600
50
50
50
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
0.8
1.29
1.24
0.93
0.82
7
9
1.6
V
V
mΩ
0.02
2
1.77
K/W
N/A
mA
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. diode
Gate-emitter leakage current
Integrated gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
R
thJH
R
thJC
Thermal grease
thickness≤50μm
λ=0.61W/mK
f=1MHz
0
25
Tj=25°C
Rgoff=16Ω
Rgon=16Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=VGE
15
0
20
1200
0
0.001
25
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
4.5
1.5
5.5
2.13
2.32
6.5
2.75
0.01
200
-
136
137
13.2
15.8
201
235
58
99
0.94
1.32
1.17
1.74
2020
193
64
1.05
K/W
N/A
pF
V
V
mA
nA
Ω
ns
±15
600
25
mWs
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
thJH
R
thJC
Thermal grease
thickness≤50μm
λ=0.61W/mK
Rgoff=16Ω
±15
600
25
25
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.3
1.9
1.89
60
65
84
153
2.68
4.64
4514
2719
1.25
2.14
1.92
K/W
N/A
2.2
V
A
ns
μC
A/μs
mWs
copyright Vincotech
3
Revision: 1
V23990-P589-A31-PM
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Brc Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl. diode
Gate-emitter leakage current
Integrated gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
Vcc=960V
Thermal grease
thickness≤50μm
λ=0.61W/mK
±15
15
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgon=32Ω
Rgoff=32Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=VGE
15
0
20
1200
0
0.0005
15
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1.6
5.8
1.88
2.30
6.5
2.2
0.005
200
-
87
87
24
28
194
256
77
102
0.95
1.29
0.82
1.17
900
80
55
120
1.8
K/W
N/A
nC
pF
V
V
mA
nA
Ω
ns
±15
600
15
mWs
Brc Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
E
rec
R
thJH
R
thJC
Thermal grease
thickness≤50μm
λ=0.61W/mK
Rgon=32Ω
±15
600
10
±15
600
10
10
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.3
1.85
1.76
2.2
5
10
12
324
489
1.38
2.27
46
46
0.58
0.96
3.28
K/W
N/A
V
μA
A
ns
μC
A/μs
mWs
Thermistor
Rated resistance
Operating current
Power dissipation
B-value
R
I
P
B
(25/50)
Tol. ±3%
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
200
3950
20.9
22
0.75
23.1
0.3
kΩ
mA
mW
K
copyright Vincotech
4
Revision: 1
V23990-P589-A31-PM
preliminary datasheet
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
75
I
C
(A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
75
I
C
(A)
Output inverter IGBT
60
60
45
45
30
30
15
15
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
μs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
μs
125
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
30
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
75
I
F
(A)
Output inverter FRED
25
60
T
j
= 25°C
20
45
15
30
10
T
j
= T
jmax
-25°C
5
T
j
= T
jmax
-25°C
T
j
= 25°C
15
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
1
2
3
V
F
(V)
4
At
t
p
=
V
CE
=
250
10
μs
V
At
t
p
=
250
μs
copyright Vincotech
5
Revision: 1
