V40DM150C
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.54 V at I
F
= 5.0 A
FEATURES
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
®
®
TMBS
eSMP Series
SMPD (TO-263AC)
K
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
Available
1
2
Top View
Bottom View
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
V40DM150C
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, industrial, and
automotive application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A (T
A
= 125 °C)
T
J
max.
Package
Diode variations
2 x 20 A
150 V
160 A
0.72 V
175 °C
SMPD (TO-263AC)
Common cathode
MECHANICAL DATA
Case:
SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity:
as marked
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
V
RRM
I
F(AV) (1)
I
FSM
T
J (2)
T
STG
SYMBOL
V40DM150C
V40DM150C
150
40
A
20
160
-40 to +175
°C
-55 to +175
A
V
UNIT
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction temperature range
Storage temperature range
Notes
(1)
Mounted on infinite heatsink
(2)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
Revision: 27-Nov-17
Document Number: 87569
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40DM150C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 5 A
I
F
= 10 A
Instantaneous forward voltage per diode
I
F
= 20 A
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
V
R
= 100 V
Reverse current at rated V
R
per diode
V
R
= 150 V
Typical junction capacitance
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
5 ms
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
C
J
I
R (2)
T
A
= 125 °C
T
A
= 25 °C
V
F (1)
SYMBOL
TYP.
0.68
0.88
1.24
0.54
0.62
0.72
0.01
3.5
-
7
1000
MAX.
-
-
1.47
-
-
0.82
-
-
0.25
20
-
pF
mA
V
UNIT
4.0 V, 1 MHz
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per device
SYMBOL
R
JC
(1)
R
JA
(2)(3)
V40DM150C
1.6
58
UNIT
°C/W
Notes
(1)
Mounted on infinite heatsink
(2)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
- junction-to-ambient
(3)
Free air, without heatsink
ORDERING INFORMATION
(Example)
PREFERRED P/N
V40DM150C-M3/I
V40DM150CHM3/I
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.55
0.55
PACKAGE CODE
I
I
BASE QUANTITY
2000/reel
2000/reel
DELIVERY MODE
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 27-Nov-17
Document Number: 87569
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40DM150C
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
45
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
R
thJA
= 58
C/W
R
thJC
= 1.6 C/W
100
T
J
= 175 °C
10
T
J
= 150 °C
1
0.1
0.01
0.001
0.0001
T
J
= -40 °C
10
20
30
40
50
60
70
80
90
100
T
J
= 25 °C
T
J
= 125 °C
T
J
= 100 °C
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Instantaneous Reverse Current (mA)
0.00001
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
20.0
18.0
D = 0.8
D = 0.5
D = 0.3
D = 1.0
D = 0.2
D = 0.1
T
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
2
4
6
8
Junction Capacitance (pF)
Average Power Loss (W)
100
D = t
p
/T
t
p
10
10 12 14 16 18 20 22 24
0.1
1
10
100
Average Forward Current (A)
Fig. 2 - Average Power Loss Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
100
100
Junction-to-ambient
Instantaneous Forward Current (A)
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 125 °C
1
T
J
= 100 °C
T
J
= 25 °C
0.1
T
J
= -40 °C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
10
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 27-Nov-17
Document Number: 87569
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40DM150C
www.vishay.com
Vishay General Semiconductor
65
Thermal Resistance (°C/W)
60
55
50
45
40
35
30
25
1
2
3
4
5
Epoxy printed circuit
board FR4 copper
thickness = 70 μm
S
(cm
2
)
6
7
8
9
Copper Pad Areas (cm
2
)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMPD
(TO-263AC)
0.402 (10.20)
0.386 (9.80)
0.059 (1.50) REF.
0.071 (1.80)
0.063 (1.60)
0.020 (0.52)
0.011 (0.27)
0.048 (1.21)
0.032 (0.81)
0.354 (8.99)
0.338 (8.59)
0.509 (12.93)
0.485 (12.33)
0.063 (1.60)
0.047 (1.20)
0.200
NOM.
(5.08)
0 to 0.01
(0 to 0.254)
0.069 (1.74)
0.053 (1.34)
0.020 (0.52)
0.011 (0.27)
0.052 (1.23)
0.028 (0.72)
Mounting Pad Layout
0.339 (8.60)
0.323 (8.20)
0.420 (10.66) MIN.
0.276 (7.00)
0.260 (6.60)
0.194
NOM.
(4.93)
0.604 (15.33)
0.525 (13.33)
0.330
REF.
(8.38)
0.120 (3.05) REF.
0.080 (2.03) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 27-Nov-17
Document Number: 87569
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000
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