V436664X24VASG-75,V436664X24VASG-75 pdf中文资料,V436664X24VASG-75引脚图,V436664X24VASG-75电路-Datasheet-电子工程世界

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V436664X24V

512MB 144-PIN UNBUFFERED SDRAM

SODIMM, 64M X 64 3.3VOLT

PRELIMINARY

Features

JEDEC-standard 144 pin, Small-Outline, Dual in

line Memory Module (SODIMM)

Serial Presence Detect with E

PROM

Nonbuffered

Fully Synchronous, All Signals Registered on

Positive Edge of System Clock

Single +3.3V (± 0.3V) Power Supply

All Device Pins are LVTTL Compatible

8192 Refresh Cycles every 64 ms

Self-Refresh Mode

Internal Pipelined Operation; Column Address

can be changed every System Clock

Programmable Burst Lengths: 1, 2, 4, 8

Auto Precharge and Piecharge all Banks by A10

Data Mask Function by DQM

Mode Register Set Programming

Programmable (CAS Latency: 2, 3 Clocks)

SOC component package

CILETIV LESOM

32M x 8

Description

The V436664X24V memory module is organized

67,108,864x 64 bits in a 144 pin SODIMM. The 64M

x 64 memory module uses 16 Mosel-Vitelic 64M x 4

SDRAM. The x64 modules are ideal for use in high

performance computer systems where increased

memory density and fast access times are required.

Speed

Grade

-75PC, CL=2,3

(133 MHz)

-75, CL=3

(133 MHz)

-10PC, CL=2,3

(100 MHz)

Part Number

V436664X24VXXX-75PC

Configuration

64M x 64

V436664X24VXXX-75

64M x 64

V436664X24VXXX-10PC

64M x 64

32M x 8

143

Pin 2 on Backside

Pin 144 on Backside

V436664X24V Rev.1.0 January 2002

V436664X24V

Front

DQMB1

DQMB5

VDD

VSS

DQ8

DQ40

DQ9

DQ41

DQ10

DQ42

DQ11

DQ43

VDD

DQ12

DQ44

Front

DQ13

DQ45

DQ14

DQ46

DQ15

DQ47

VSS

CLK0

CKE0

VDD

RAS

CAS

CKE1

CS0

CS1

A12

Back

CLK1

VSS

VDD

DQ16

DQ48

DQ17

DQ49

DQ18

DQ50

DQ19

DQ51

VSS

DQ20

DQ52

DQ21

DQ53

100

101

102

103

104

105

106

107

108

109

110

111

112

113

114

115

116

117

118

119

120

Back

DQ22

DQ54

DQ23

DQ55

VDD

BA0

VSS

BA1

A10

A11

VDD

DQMB2

DQMB6

DQMB3

DQMB7

VSS

121

122

123

124

125

126

127

128

129

130

131

132

133

134

135

136

137

138

139

140

141

142

143

144

Back

DQ24

DQ56

DQ25

DQ57

DQ26

DQ58

DQ27

DQ59

VDD

DQ28

DQ60

DQ29

DQ61

DQ30

DQ62

DQ31

DQ63

VSS

SDA

SCL

VDD

CILETIV LESOM

Front

VSS

DQ0

DQ32

DQ1

DQ33

DQ2

DQ34

DQ3

DQ35

VDD

DQ4

DQ36

DQ5

DQ37

DQ6

DQ38

DQ7

DQ39

VSS

DQMB0

DQMB4

Pin Configurations (Front Side/Back Side)

Note:

1. RAS, CAS, WE CASx, CSx are active low signals.

Pin Names

A0–A11, BA0, BA1

DQ0–DQ63

RAS

CAS

CS0, CS1

DQMB0–DQMB7

CKE0, CKE1

CLK0, CLK1

SDA

SCL

VDD

VSS

Address, Bank Select

Data Inputs/Outputs

Row Address Strobes

Column Address Strobes

Write Enable

Chip Select

Output Enable

Clock Enable

Clock

Serial Input/Output

Serial Clock

Power Supply

Ground

No Connect (Open)

V436664X24V Rev. 1.0 January 2002

V436664X24V

CILETIV LESOM

MOSEL VITELIC

MANUFACTURED

V436664X24V Rev. 1.0 January 2002

Part Number Information

X 2

X S

G - XX

SDRAM

3.3V

WIDTH

DEPTH

144 PIN SODIMM

X4 COMPONENT

REFRESH

RATE 8K

SPEED

75PC = PC133 CL2,3

75 = PC133 CL3

10PC = PC100 CL2,3

LEAD FINISH

G = GOLD

COMPONENT

PACKAGE, S=SOC

COMPONENT A=0.17u B=0.14u

REV LEVEL

LVTTL

4 BANKS

V436664X24V

CILETIV LESOM

BLOCK DIAGRAM

CS0

DQM0

I/O1–I/O4

DQM

I/O1–I/O4 D0

DQM

I/O1–I/O4 D1

DQM

I/O1–I/O4 D2

DQM

I/O1–I/O4 D3

DQM4

I/O33–I/O36

DQM

I/O1–I/O4 D8

DQM

I/O1–I/O4 D9

DQM

I/O1–I/O4 D10

DQM

I/O1–I/O4 D11

I/O5–I/O8

DQM1

I/O9–I/O12

I/O37–I/O40

DQM5

I/O41–I/O44

I/O13–I/O16

I/O45–I/O48

CS0

DQM2

I/O17–I/O20

DQM

I/O1–I/O4 D4

DQM

I/O1–I/O4 D5

DQM

I/O1–I/O4 D6

DQM

I/O1–I/O4 D7

DQM6

I/O49–I/O52

DQM

I/O1–I/O4 D12

DQM

I/O1–I/O4 D13

DQM

I/O1–I/O4 D14

CS0,

I/O21–I/O24

DQM3

I/O25–I/O28

I/O53–I/O56

DQM7

I/O57–I/O60

I/O29–I/O32

I/O61–I/O64

DQM

I/O1–I/O4 D15

CLK1,CLK3

CLK0, CLK2

V436664X24V Rev. 1.0 January 2002

RAS

CAS

CKE0

DQM0–DQM7

D0–D15

A0–A11

BA0, BA1

10K

12pF

D0–D17

V436664X24V

A serial presence detect storage device - E

PROM -

is assembled onto the module. Information about the

module configuration, speed, etc. is written into the

CILETIV LESOM

Block Diagram

Serial Presence Detect Information

SPD-Table for modules:

Byte Num-

ber

PROM device during module production using a se-

rial presence detect protocol (I

C synchronous 2-wire

bus)

Hex Value

Function Described

Number of SPD bytes

Total bytes in Serial PD

Memory Type

Number of Row Addresses (without BS bits)

Number of Column Addresses ( x8 SDRAM)

Number of DIMM Banks

Module Data Width

Module Data Width (continued)

Module Interface Levels

SDRAM Cycle Time at CL=3

SDRAM Access Time from Clock at CL=3

Dimm Config (Error Det/Corr.)

Refresh Rate/Type

SDRAM width, Primary

Error Checking SDRAM Data Width

Minimum Clock Delay from Back to Back Ran-

dom Column Address

Burst Length Supported

Number of SDRAM Banks

Supported CAS Latencies

CS Latencies

WE Latencies

SDRAM DIMM Module Attributes

SDRAM Device Attributes: General

Minimum Clock Cycle Time at CAS Latency = 2

SPD Entry Value

128

256

SDRAM

LVTTL

7.5 ns/10.0 ns

5.4 ns/6.0ns

none

Self-Refresh,15.6

µs

n/a /

ccd

= 1 CLK

1, 2, 4 & 8

CL = 2 / 3

CS Latency = 0

WL = 0

Non Buffered/Non Reg.

Vcc tol ± 10%

7.5 ns/10.0 ns

-75PC

-75

-10PC

Maximum Data Access Time from Clock for CL

Minimum Clock Cycle Time at CL = 1

Maximum Data Access Time from Clock at CL =

Minimum Row Precharge Time

5.4ns/6.0ns

Not Supported

15 ns / 20 ns

V436664X24V Rev. 1.0 January 2002

参数对比

与V436664X24VASG-75相近的元器件有：V436664X24VASG-75PC、V436664X24VASG-10PC、V436664X24VBSG-10PC、V436664X24VBSG-75PC、V436664X24VBSG-75。描述及对比如下：

型号	V436664X24VASG-75	V436664X24VASG-75PC	V436664X24VASG-10PC	V436664X24VBSG-10PC	V436664X24VBSG-75PC	V436664X24VBSG-75
描述	Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, SODIMM-144	Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, SODIMM-144
零件包装代码	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
包装说明	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
针数	144	144	144	144	144	144
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
最长访问时间	5.4 ns	5.4 ns	6 ns	6 ns	5.4 ns	5.4 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	133 MHz	133 MHz	100 MHz	100 MHz	133 MHz	133 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
内存密度	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bi
内存集成电路类型	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
内存宽度	64	64	64	64	64	64
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	144	144	144	144	144	144
字数	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words
字数代码	64000000	64000000	64000000	64000000	64000000	64000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	64MX64	64MX64	64MX64	64MX64	64MX64	64MX64
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
封装等效代码	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	8192	8192	8192	8192
自我刷新	YES	YES	YES	YES	YES	YES
最大待机电流	0.032 A	0.032 A	0.032 A	0.032 A	0.032 A	0.032 A
最大压摆率	4 mA	4 mA	3.52 mA	3.52 mA	4 mA	4 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
厂商名称	-	-	Mosel Vitelic Corporation ( MVC )	Mosel Vitelic Corporation ( MVC )	Mosel Vitelic Corporation ( MVC )	Mosel Vitelic Corporation ( MVC )