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V437464C24V

3.3 VOLT 64M x 72 HIGH PERFORMANCE

PC133 REGISTERED PLL ECC SDRAM

MODULE

Description

PRELIMINARY

168 Pin Registered ECC 67,108,864 x 72 bit

Oganization SDRAM Modules

Utilizes High Performance 64M x 4 SDRAM in

TSOPII-54 Packages

Fully PC Board Layout Compatible to INTEL’S

Rev 1.2 Module Specification

Single +3.3V (± 0.3V) Power Supply

Programmable CAS Latency, Burst Length, and

Wrap Sequence (Sequential & Interleave)

Auto Refresh (CBR) and Self Refresh

All Inputs, Outputs are LVTTL Compatible

8192 Refresh Cycles every 64 ms

Serial Present Detect (SPD)

SDRAM Performance

Key Component Timing Parameters

Clock Frequency (max.)

Clock Access Time CAS Latency = 3

Clock Access Time CAS Latency = 2

CILETIV LESOM

Features

Frequency

V437464C24V

133 MHz (PC)

V437464C24V

133 MHz

V437464C24V

100 MHz (PC)

V437464C24V Rev.1.0 January 2002

The V437464C24V memory module is organized

67,108,864 x 72 bits in a 168 pin dual in line

memory module (DIMM). The 64M x 72 registered

DIMM uses 18 Mosel-Vitelic 64M x 4 ECC SDRAM.

The x72 registered modules are ideal for use in high

performance computer systems where increased

memory density and fast access times are required.

-7PC

143

5.4

-7

143

5.4

-8PC

125

Units

MHz

Module Frequency vs AC Parameter

(CAS Latency)

RCD

Unit

CLK

V437464C24V

Front

DQM1

CS0

VSS

A10(AP)

BA1

VCC

CLK0

VSS

CS2

DQM2

DQM3

VCC

CB2

CB3

VSS

I/O17

I/O18

Front

I/O19

I/O20

VCC

I/O21

CKE1*

VSS

I/O22

I/O23

I/O24

VSS

I/O25

I/O26

I/O27

I/O28

VCC

I/O29

I/O30

I/O31

I/O32

VSS

CLK2*

SDA

SCL

VCC

100

101

102

103

104

105

106

107

108

109

110

111

112

Back

VSS

I/O33

I/O34

I/O35

I/O36

VCC

I/O37

I/O38

I/O39

I/O40

I/O41

VSS

I/O42

I/O43

I/O44

I/O45

I/O46

VCC

I/O47

I/O48

CB4

CB5

VSS

VCC

CAS

DQM4

113

114

115

116

117

118

119

120

121

122

123

124

125

126

127

128

129

130

131

132

133

134

135

136

137

138

139

140

Back

DQM5

CS1

RAS

VSS

BA0

A11

VCC

CLK1*

A12

VSS

CKE0

CS3

DQM6

DQM7

VCC

CB6

CB7

VSS

I/O49

I/O50

141

142

143

144

145

146

147

148

149

150

151

152

153

154

155

156

157

158

159

160

161

162

163

164

165

166

167

168

Back

I/O51

I/O52

VCC

I/O53

REGE

VSS

I/O54

I/O55

I/O56

VSS

I/O57

I/O58

I/O59

I/O60

VCC

I/O61

I/O62

I/O63

I/O64

VSS

CLK3*

SA0

SA1

SA2

VCC

CILETIV LESOM

Front

VSS

I/O1

I/O2

I/O3

I/O4

VCC

I/O5

I/O6

I/O7

I/O8

I/O9

VSS

I/O10

I/O11

I/O12

I/O13

I/O14

VCC

I/O15

I/O16

CBO

CB1

VSS

VCC

DQM0

Pin Configurations (Front Side/Back Side)

Notes:

These pins are not used in this module.

Pin Names

A0–A12

I/O1–I/O64

RAS

CAS

BA0, BA1

CKE0

CS0, CS2

CLK0–CLK3

DQM0–DQM7

VCC

VSS

SCL

Address Inputs

Data Inputs/Outputs

Row Address Strobe

Column Address Strobe

Read/Write Input

Bank Selects

Clock Enable

Chip Select

Clock Input

Data Mask

Power (+3.3 Volts)

Ground

Clock for Presence Detect

CB0–CB4

REGE

SA0–A2

SDA

Serial Data OUT for Presence

Detect

Serial Data IN for Presence

Detect

Check Bits (x72 Organization)

No Connection

Don’t Use

V437464C24V Rev. 1.0 January 2002

V437464C24V

Block Diagram

RCS0

RQM0

I/O1–I/O4

10Ω

DQM

I/O1–I/O8 D0

DQM

I/O1–I/O8 D1

DQM

I/O1–I/O8 D2

DQM

I/O1–I/O8 D3

DQM

I/O1–I/O8 D4

RQM4

I/O33–I/O36

10Ω

DQM

I/O1–I/O8 D9

DQM

I/O1–I/O8 D10

DQM

I/O1–I/O8 D11

DQM

I/O1–I/O8 D12

DQM

I/O1–I/O8 D13

I/O13–I/O16

10Ω

RQM2

I/O17–I/O20

10Ω

I/O21–I/O24

10Ω

RQM3

I/O25–I/O28

10Ω

I/O29–I/O32

10Ω

CILETIV LESOM

MOSEL VITELIC

MANUFACTURED

Module Part Number Information

G - XX

SPEED

75PC= PC133 CL2

75 = PC133 CL3

10PC= PC100 CL2

SDRAM

3.3V

WIDTH

DEPTH

168 PIN REGISTERED

DIMM X4 COMPONENT

REFRESH

RATE 8K

LEAD FINISH

G = GOLD

COMPONENT

PACKAGE, T = TSOP

COMPONENT A=0.17um

REV LEVEL B=0.14um

LVTTL

4 BANKS

I/O5–I/O8

10Ω

RQM1

I/O9–I/O12

10Ω

I/O37–I/O40

10Ω

RQM5

I/O41–I/O44

10Ω

I/O45–I/O48

10Ω

RAS

CAS

CKE0

DQM0–DQM7

CB1–CB3

10Ω

RCS2

CB4–CB7

10Ω

RRAS

RCAS

RWE

D0–D17

R0CKE0, R1CKE0

RDQM0–RDQM7

RC0, RCS2

RA0–RA12

RBA0, RBA1

D0–D17

DQM

I/O1–I/O8 D5

RQM6

I/O49–I/O52

10Ω

DQM

I/O1–I/O8 D14

CS0, CS

A0–A12

BA0, BA1

DQM

I/O1–I/O8 D6

I/O53–I/O56

10Ω

RQM7

I/O57–I/O60

10Ω

DQM

I/O1–I/O8 D15

REGE

10K

DQM

I/O1–I/O8 D7

DQM

I/O1–I/O8 D8

DQM

I/O1–I/O8 D16

DQM

I/O1–I/O8 D17

PLL CLK

10K

CLK1–CLK3

12pF

CLK0

10K

PLL

12pF

D0–D17

I/O61–I/O64

10Ω

V437464C24V Rev. 1.0 January 2002

V437464C24V

written into the E

PROM device during module pro-

duction using a serial presence detect protocol (I

synchronous 2-wire bus)

A serial presence detect storage device –

PROM – is assembled onto the module. Informa-

tion about the module configuration, speed, etc. is

CILETIV LESOM

SPD-Table

Memory Type

CS Latencies

WE Latencies

Serial Presence Detect Information

Byte Num-

ber

Function Described

Number of SPD bytes

Total bytes in Serial PD

Hex Value

SPD Entry Value

128

256

SDRAM

-75PC

-75

-10PC

Number of Row Addresses (without BS bits)

Number of Column Addresses (for x4

SDRAM)

Number of DIMM Banks

Module Data Width

Module Data Width (continued)

Module Interface Levels

SDRAM Cycle Time at CL=3

SDRAM Access Time from Clock at CL=3

Dimm Config (Error Det/Corr.)

Refresh Rate/Type

SDRAM width, Primary

Error Checking SDRAM Data Width

Minimum Clock Delay from Back to Back

Random Column Address

Burst Length Supported

Number of SDRAM Banks

Supported CAS Latencies

LVTTL

7.5 ns/10.0 ns

5.4 ns/6.0 ns

ECC

Self-Refresh, 7.8µs

n/a / x4

ccd

= 1 CLK

1, 2, 4, 8

CL = 2/3

CS Latency = 0

WL = 0

Registered/Buffered

Vcc tol ± 10%

7.5ns/10.0ns

SDRAM DIMM Module Attributes

SDRAM Device Attributes: General

Minimum Clock Cycle Time at CAS Latency

Maximum Data Access Time from Clock for

CL = 2

Minimum Clock Cycle Time at CL = 1

Maximum Data Access Time from Clock at

CL = 1

Minimum Row Precharge Time

5.4ns/6.0ns

Not Supported

15 ns/20 ns

V437464C24V Rev. 1.0 January 2002

V437464C24V

CILETIV LESOM

SPD-Table

Byte Num-

ber

Function Described

Minimum Row Active to Row Active Delay

RRD

Minimum RAS to CAS Delay t

RCD

Minimum RAS Pulse Width t

RAS

Module Bank Density (Per Bank)

SDRAM Input Setup Time

SDRAM Input Hold Time

SDRAM Data Input Setup Time

SDRAM Data Input Hold Time

Superset Information (May be used in Fu-

ture)

SPD Revision

Checksum for Bytes 0 - 62

Manufacturer’s JEDEC ID Code

Manufacturer’s JEDEC ID Code (cont.)

Manufacturing Location

Module Part Number (ASCII)

PCB Identification Code

Assembly Manufacturing Date (Year)

Assembly Manufacturing Date (Week)

Assembly Serial Number

Reserved

Intel Specification for Frequency

Supported Frequency

Unused Storage Location

Mosel Vitelic

Revision 2/1.2

Hex Value

SPD Entry Value

14 ns/15 ns/16 ns

-75PC

-75

-10PC

62-61

15 ns/20 ns

42 ns/45 ns

512 MByte

1.5 ns/2.0 ns

0.8 ns/1.0 ns

1.5 ns/2.0 ns

0.8 ns/1.0 ns

65-71

73-90

91-92

95-98

99-125

126

127

128+

V437464C24V Rev. 1.0 January 2002

参数对比

与V437464C24VBTG-10PC相近的元器件有：V437464C24VBTG-75、V437464C24VBTG-75PC、V437464C24VATG-75、V437464C24VATG-10PC、V437464C24VATG-75PC。描述及对比如下：

型号	V437464C24VBTG-10PC	V437464C24VBTG-75	V437464C24VBTG-75PC	V437464C24VATG-75	V437464C24VATG-10PC	V437464C24VATG-75PC
描述	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168
厂商名称	Mosel Vitelic Corporation ( MVC )	Mosel Vitelic Corporation ( MVC )	Mosel Vitelic Corporation ( MVC )	Mosel Vitelic Corporation ( MVC )	Mosel Vitelic Corporation ( MVC )	Mosel Vitelic Corporation ( MVC )
零件包装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
包装说明	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
针数	168	168	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
最长访问时间	6 ns	5.4 ns	5.4 ns	5.4 ns	6 ns	5.4 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	100 MHz	133 MHz	133 MHz	133 MHz	100 MHz	133 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
内存密度	4831838208 bit	4831838208 bit	4831838208 bit	4831838208 bit	4831838208 bit	4831838208 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
内存宽度	72	72	72	72	72	72
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	168	168	168	168	168	168
字数	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words
字数代码	64000000	64000000	64000000	64000000	64000000	64000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	64MX72	64MX72	64MX72	64MX72	64MX72	64MX72
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
封装等效代码	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168	DIMM168
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	8192	8192	8192	8192
自我刷新	YES	YES	YES	YES	YES	YES
最大待机电流	0.036 A	0.036 A	0.036 A	0.036 A	0.036 A	0.036 A
最大压摆率	3.96 mA	4.3 mA	4.3 mA	4.3 mA	3.96 mA	4.3 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL