V54C3128(16/80/40)4VC
128Mbit SDRAM
3.3 VOLT, TSOP II / BGA PACKAGE
8M X 16, 16M X 8, 32M X 4
5
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Access Time (t
AC2
) CAS Latency = 2
200 MHz
5 ns
4.5 ns
4.5 ns
6
166 MHz
6 ns
5.4 ns
5.4 ns
7PC
143 MHz
7 ns
5.4 ns
5.4 ns
7
143 MHz
7 ns
5.4 ns
6 ns
10
100 MHz
10 ns
6 ns
6 ns
Features
■
■
■
■
■
■
■
■
■
■
■
4 banks x 2Mbit x 16 organization
4 banks x 4Mbit x 8 organization
4 banks x 8Mbit x 4 organization
High speed data transfer rates up to 200 MHz
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or
Interleave
Programmable Burst Length:
1, 2, 4, 8, and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 4096 cycles/64 ms
Available in 54 Pin TSOP II, 54 Ball BGA, 60 Ball
BGA
LVTTL Interface
Single +3.3 V
±0.3
V Power Supply
Description
The V54C3128(16/80/40)4VC is a four bank Syn-
chronous DRAM organized as 4 banks x 2Mbit x 16,
4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The
V54C3128(16/80/40)4VC achieves high speed data
transfer rates up to 200 MHz by employing a chip
architecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
200 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
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Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
-40°C to 85°C
-40°C to 105°C
-40°C to 125°C
Package Outline
J/K/I
•
•
•
•
Access Time (ns)
5
•
•
•
•
Power
7
•
•
•
•
6
•
•
•
•
7PC
•
•
•
•
Std.
•
•
•
•
L
•
•
•
•
Temperature
Mark
Blank
I
H
E
V54C3128(16/80/40)4VC Rev. 1.3 November 2008
1
ProMOS TECHNOLOGIES
Part Number Information
V54C3128(16/80/40)4VC
V
ProMOS
5 4
C
3
1 2 8 8 0
ORGANIZATION
& REFRESH
1Mx16, 2K : 1616
4Mx16, 4K : 6516
4
V
D
T
7 5
PC
OTHER
PC
: CL2
TYPE
54 : SDRAM
55 : MOBILE SDRAM
32Mx4, 4K : 12840
16Mx8, 4K : 12880
64Mx4, 8K : 25640
32Mx8, 8K : 25680
128Mx4, 8K : 51240
64Mx8, 8K : 51280
8Mx16, 4K : 12816
BLANK: CL3
TEMPERATURE
BLANK: 0 - 70C
16Mx16, 8K : 25616
32Mx16, 8K : 51216
I:
H:
E:
SPEED
I/O
V: LVTTL
REV LEVEL
A: 1st
B: 2nd
C: 3rd
D: 4th
PACKAGE
LEAD
PLATING
SPECIAL FEATURE
L : LOW POWER GRADE
U : ULTRA LOW POWER GRADE
T
S
C
B
D
Z
R
E
F
G
H
I
J
K
M
N
P
RoHS
10 : 100MHz
8 : 125MHz
75 : 133MHz
-40 - 85C
-40 - 105C
-40 - 125C
CMOS
BANKS
VOLTAGE
2 : 2 BANKS
4 : 4 BANKS
8 : 8 BANKS
7 : 143MHz
6 : 166MHz
5 : 200MHz
4:
3:
2:
1:
3.0V
3.3 V
2.5 V
1.8 V
GREEN PACKAGE
DESCRIPTION
TSOP
60-Ball FBGA
54-BallFBGA
BGA
Die-stacked TSOP
Die-stacked FBGA
* RoHS: Restriction of Hazardous Substances
* Green: RoHS-compliant and Halogen-free
V54C3128(16/80/40)4VC Rev. 1.3 November 2008
2
ProMOS TECHNOLOGIES
V54C3128(16/80/40)4VC
Description
TSOP-II
Pkg.
I
Pin Count
54
54 Pin Plastic TSOP-II
x16 PIN CONFIGURATION
Top View
V
CC
I/O
0
V
CCQ
I/O
1
I/O
2
V
SSQ
I/O
3
I/O
4
V
CCQ
I/O
5
I/O
6
V
SSQ
I/O
7
V
CC
LDQM
WE
CAS
RAS
CS
BA0
BA1
A
10
A
0
A
1
A
2
A
3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
Pin Names
CLK
CKE
Clock Input
Clock Enable
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Address Inputs
Bank Select
Data Input/Output
Data Mask
Power (+3.3V)
Ground
Power for I/O’s (+3.3V)
Ground for I/O’s
Not connected
V
SS
I/O
15
V
SSQ
I/O
14
I/O
13
V
CCQ
I/O
12
I/O
11
V
SSQ
I/O
10
I/O
9
V
CCQ
I/O
8
V
SS
NC
UDQM
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
CS
RAS
CAS
WE
A
0
–A
11
BA0, BA1
I/O
0
–I/O
15
LDQM, UDQM
V
CC
V
SS
V
CCQ
V
SSQ
NC
V54C3128(16/80/40)4VC Rev. 1.3 November 2008
3
ProMOS TECHNOLOGIES
V54C3128(16/80/40)4VC
Description
TSOP-II
Pkg.
I
Pin Count
54
54 Pin Plastic TSOP-II
x8 PIN CONFIGURATION
Top View
V
CC
I/O
0
V
CCQ
NC
I/O
1
V
SSQ
NC
I/O
2
V
CCQ
NC
I/O
3
V
SSQ
NC
V
CC
NC
WE
CAS
RAS
CS
BA0
BA1
A
10
A
0
A
1
A
2
A
3
V
CC
V
SS
I/O
7
V
SSQ
NC
I/O
6
V
CCQ
NC
I/O
5
V
SSQ
NC
I/O
4
V
CCQ
NC
V
SS
NC
DQM
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
Pin Names
CLK
CKE
Clock Input
Clock Enable
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Address Inputs
Bank Select
Data Input/Output
Data Mask
Power (+3.3V)
Ground
Power for I/O’s (+3.3V)
Ground for I/O’s
Not connected
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
356804V-01
CS
RAS
CAS
WE
A
0
–A
11
BA0, BA1
I/O
0
–I/O
7
DQM
V
CC
V
SS
V
CCQ
V
SSQ
NC
V54C3128(16/80/40)4VC Rev. 1.3 November 2008
4
ProMOS TECHNOLOGIES
V54C3128(16/80/40)4VC
Description
TSOP-II
Pkg.
I
Pin Count
54
54 Pin Plastic TSOP-II
x4 PIN CONFIGURATION
Top View
V
CC
NC
V
CCQ
NC
I/O
0
V
SSQ
NC
NC
V
CCQ
NC
I/O
1
V
SSQ
NC
V
CC
NC
WE
CAS
RAS
CS
BA0
BA1
A
10
A
0
A
1
A
2
A
3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
356404V-01
Pin Names
CLK
CKE
Clock Input
Clock Enable
Chip Select
Row Address Strobe
Column Address Strobe
Write Enable
Address Inputs
Bank Select
Data Input/Output
Data Mask
Power (+3.3V)
Ground
Power for I/O’s (+3.3V)
Ground for I/O’s
Not connected
V
SS
NC
V
SSQ
NC
I/O
3
V
CCQ
NC
NC
V
SSQ
NC
I/O
2
V
CCQ
NC
V
SS
NC
DQM
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
CS
RAS
CAS
WE
A
0
–A
11
BA0, BA1
I/O
0
–I/O
3
DQM
V
CC
V
SS
V
CCQ
V
SSQ
NC
V54C3128(16/80/40)4VC Rev. 1.3 November 2008
5
