V59C1G01(408/808/168)QB
HIGH PERFORMANCE 1Gbit DDR2 SDRAM
8 BANKS X 32Mbit X 4 (408)
8 BANKS X 16Mbit X 8 (808)
8 BANKS X 8Mbit X 16 (168)
37
DDR2-533
Clock Cycle Time (t
CK3
)
Clock Cycle Time (t
CK4
)
Clock Cycle Time (t
CK5
)
Clock Cycle Time (t
CK6
)
Clock Cycle Time (t
CK7
)
System Frequency (f
CK max
)
5ns
3.75ns
-
-
-
266 MHz
3
DDR2-667
5ns
3.75ns
3ns
-
-
333 MHz
25A
DDR2-800
5ns
3.75ns
3ns
2.5ns
-
400 MHz
25
DDR2-800
5ns
3.75ns
2.5ns
2.5ns
-
400 MHz
19A
DDR2-1066
5ns
3.75ns
3ns
2.5ns
1.875ns
533 MHz
Features
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Description
The V59C1G01(408/808/168)QB is a eight bank DDR
DRAM organized as 8 banks x 32Mbit x 4 (408), 8 banks x
16Mbit x 8 (808), or 8 banks x 8Mbit x 16 (168). The
V59C1G01(408/808/168)QB achieves high speed data
transfer rates by employing a chip architecture that
prefetches multiple bits and then synchronizes the output
data to a system clock.
The chip is designed to comply with the following key
DDR2 SDRAM features:(1) posted CAS with additive la-
tency, (2) write latency = read latency-1, (3) On Die Ter-
mination.
All of the control, address, circuits are synchronized
with the positive edge of an externally supplied clock. I/O
s are synchronized with a pair of bidirectional strobes
(DQS, DQS) in a source synchronous fashion.
Operating the eight memory banks in an interleaved
fashion allows random access operation to occur at a
higher rate than is possible with standard DRAMs. A se-
quential and gapless data rate is possible depending on
burst length, CAS latency and speed grade of the device.
High speed data transfer rates with system frequency
up to 533 MHz
8 internal banks for concurrent operation
4-bit prefetch architecture
Programmable CAS Latency: 3, 4 ,5 , 6 and 7
Programmable Additive Latency:0, 1, 2, 3 , 4, 5 and 6
Write Latency = Read Latency -1
Programmable Wrap Sequence: Sequential
or Interleave
Programmable Burst Length: 4 and 8
Automatic and Controlled Precharge Command
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tcase be-
tween 0
o
C and 85
o
C
ODT (On-Die Termination)
Weak Strength Data-Output Driver Option
Bidirectional differential Data Strobe (Single-ended
data-strobe is an optional feature)
On-Chip DLL aligns DQ and DQs transitions with CK
transitions
DQS can be disabled for single-ended data strobe
Read Data Strobe (RDQS) supported (x8 only)
Differential clock inputs CK and CK
JEDEC Power Supply 1.8V ± 0.1V
VDDQ =1.8V ± 0.1V
Available in 60-ball FBGA for x4 and x8 component or
84-ball FBGA for x16 component
RoHS compliant
PASR Partial Array Self Refresh
tRAS lockout supported
Available Speed Grade
1:
Table
Grade
-37 (DDR2-533)
-3 (DDR2-667)
-25A (DDR2-800)
-25 (DDR2-800)
-19A (DDR2-1066)
CL
4
5
6
5
7
tRCD
4
5
6
5
7
tRP
4
5
6
5
7
Unit
CLK
CLK
CLK
CLK
CLK
Device Usage Chart
Operating
Temperature
Range
0°C
≤
Tc
≤
85°C
-40°C
≤
Tc
≤
95°C
Package Outline
60-ball FBGA
84-ball FBGA
•
•
CK Cycle Time (ns)
-37
•
•
Power
-19A
•
•
-3
•
•
-25A
•
•
-25
•
•
Std.
•
•
L
•
•
Temperature
Mark
Blank
I
V59C1G01(408/808/168)QB Rev. 1.5 August 2011
1
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QB
Part Number Information
1
2
3
4
5
6
7
8
9 10
11
12
13
14
15
16 17 18
19
V
ProMOS
5 9
C
1
G 0 1 8 0
ORGANIZATION
& REFRESH
64Mx4, 8K : 25640
32Mx8, 8K : 25680
128Mx4, 8K : 51240
64Mx8, 8K : 51280
32Mx16, 8K : 51216
64Mx16, 8K : G0116
16Mx16, 8K : 25616
8
Q
B
J
2 5
TEMPERATURE
BLANK:
0 - 85 C
-40 - 95 C
-40 - 105 C
-40 - 125 C
I:
H:
E:
SPEED
5 : 200MHz @CL3-3-3
TYPE
59 : DDR2
CMOS
256Mx4, 8K : G0140
128Mx8, 8K : G0180
VOLTAGE
1:
1.8 V
BANKS
4 : 4 BANKS
8 : 8 BANKS
I/O
Q: SSTL_18
REV CODE
37 : 266MHz @CL4-4-4
3 : 333MHz @CL5-5-5
25 : 400MHz @CL5-5-5
25A : 400MHz @CL6-6-6
19 : 533MHz @CL6-6-6
19A : 533MHz @CL7-7-7
SPECIAL FEATURE
L : LOW POWER GRADE
U : ULTRA LOW POWER GRADE
F
J
P
PACKAGE
RoHS Green
PACKAGE
DESCRIPTION
FBGA
De-stacked FBGA
*RoHS: Restriction of Hazardous Substances
*GREEN: RoHS-compliant and Halogen-Free
1Gb DDR2 SDRAM Addressing
Confi gura tion
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
256Mb x 4
8
BA0 ~ BA2
A
10
/AP
A
0
~ A
13
A
0
~ A
9,
A
11
128Mb x 8
8
BA0 ~ BA2
A
10
/AP
A
0
~ A
13
A
0
~ A
9
64Mb x1 6
8
BA0 ~ BA2
A
10
/AP
A
0
~ A
12
A
0
~ A
9
V59C1G01(408/808/168)QB Rev. 1.5 August 2011
2
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QB
128M
x
4
DDR2 PIN CONFIGURATION
(Top view : see balls through package)
1
VDD
NC
VDDQ
NC
VDDL
2
NC
VSSQ
DQ1
VSSQ
VREF
CKE
BA2
BA0
A10/AP
VSS
A3
A7
VDD
A12
3
VSS
DM
VDDQ
DQ3
VSS
WE
BA1
A1
A5
A9
NC
A
B
C
D
E
F
G
H
J
K
L
7
VSSQ
DQS
VDDQ
DQ2
VSSDL
RAS
CAS
A2
A6
A11
NC
8
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
A0
A4
A8
A13
VSS
VDD
9
VDDQ
NC
VDDQ
NC
VDD
ODT
V59C1G01(408/808/168)QB Rev. 1.5 August 2011
3
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QB
V59C1G01(408/808/168)QB Rev. 1.5 August 2011
4
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QB
64Mx16 DDR2 PIN CONFIGURATION
(Top view: see balls through package)
1
VD D
DQ1 4
VD DQ
DQ1 2
VD D
DQ6
VD DQ
DQ4
VD DL
2
NC
VSSQ
DQ9
VSSQ
NC
VSSQ
DQ1
VSSQ
VRE F
CKE
3
VS S
UDM
VD DQ
DQ1 1
VS S
LD M
VD DQ
DQ3
VS S
WE
BA1
A1
A5
A9
NC
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
7
VSS Q
UDQS
VDD Q
DQ10
VSS Q
LD QS
VDD Q
DQ2
VSS DL
RA S
CAS
A2
A6
A11
NC
8
UD QS
VS SQ
DQ8
VS SQ
LD QS
VS SQ
DQ0
VS SQ
CK
CK
CS
A0
A4
A8
NC
9
VD DQ
DQ1 5
VD DQ
DQ1 3
VD DQ
DQ7
VD DQ
DQ5
VD D
ODT
BA2
BA 0
A1 0/AP
VD D
VS S
A3
A7
VS S
VDD
A1 2
V59C1G01(408/808/168)QB Rev. 1.5 August 2011
5
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