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VB20120C-E3/4W

10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
D2PAK
包装说明
R-PSSO-G2
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW POWER LOSS
应用
EFFICIENCY
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.72 V
JEDEC-95代码
TO-263AB
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
120 A
元件数量
2
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-40 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
245
认证状态
Not Qualified
最大重复峰值反向电压
120 V
表面贴装
YES
技术
SCHOTTKY
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.54 V at I
F
= 5 A
TMBS
®
TO-220AB
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
2
V20120C
PIN 1
PIN 3
PIN 2
CASE
3
1
VF20120C
PIN 1
PIN 3
PIN 2
2
3
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
1
TO-263AB
K
K
TO-262AA
2
1
1
VB20120C
PIN 1
PIN 2
K
HEATSINK
2
3
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
VI20120C
PIN 1
PIN 3
PIN 2
K
Case:
TO-220AB,
TO-262AA
ITO-220AB,
TO-263AB
and
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A
T
J
max.
2 x 10 A
120 V
120 A
0.64 V
150 °C
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(Fig. 1)
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
V
AC
T
J
, T
STG
V20120C
VF20120C
VB20120C
VI20120C
UNIT
V
A
A
V
°C
120
20
10
120
1500
- 40 to + 150
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Document Number: 89040
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
TEST CONDITIONS
I
R
= 1.0 mA
I
F
= 5 A
I
F
= 10 A
I
F
= 5 A
I
F
= 10 A
V
R
= 90 V
Reverse current per diode
(2)
V
R
= 120 V
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
40 ms
T
A
= 25 °C
T
A
= 25 °C
V
F
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
BR
TYP.
120 (minimum)
0.62
0.81
0.54
0.64
8
6
I
R
-
14
MAX.
-
-
0.90
V
-
0.72
-
-
700
45
µA
mA
µA
mA
UNIT
V
Instantaneous forward voltage per diode
(1)
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
θJC
V20120C
2.8
VF20120C
5.0
VB20120C
2.8
VI20120C
2.8
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
V20120C-E3/4W
VF20120C-E3/4W
VB20120C-E3/4W
VB20120C-E3/8W
VI20120C-E3/4W
UNIT WEIGHT (g)
1.88
1.75
1.37
1.37
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
25
10
Resistive or Inductive Load
V(B,I)20120C
D = 0.5
D = 0.3
6
D = 0.2
4
D = 0.1
T
2
D = t
p
/T
0
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
t
p
D = 1.0
D = 0.8
Average Forward Rectified Current (A)
15
VF20120C
10
5
Mounted on specific Heatsink
0
Average Power Loss (W)
20
8
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89040
Revision: 19-May-08
New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
10
1
T
A
= 25 °C
V(B,I)20120C
1
0.01
0.1
1
10
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
10
T
A
= 125 °C
1
T
A
= 100 °C
0.1
Junction to Case
1
0.01
T
A
= 25 °C
VF20120C
0.1
0.01
0.1
1
10
100
0.001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Junction Capacitance (pF)
100
10
0.1
1
10
100
Reverse
Voltage
(V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 89040
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
45° REF.
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.600 (15.24)
0.580 (14.73)
PIN
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
1
2
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.191 (4.85)
0.171 (4.35)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
TO-262AA
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
30° (TYP.)
(REF.)
0.950 (24.13)
0.920 (23.37)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.510 (12.95)
0.470 (11.94)
3
0.350 (8.89)
0.330 (8.38)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
PIN 1
PIN 3
PIN 2
HEATSINK
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89040
Revision: 19-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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参数对比
与VB20120C-E3/4W相近的元器件有:V20120C、VF20120C、VB20120C。描述及对比如下:
型号 VB20120C-E3/4W V20120C VF20120C VB20120C
描述 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB 10 A, 120 V, SILICON, RECTIFIER DIODE, TO-263AB
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