is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
1
VBM1806
www.VBsemi.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A
T
C
= 25 °C
75
150
0.76
38
36
19
19
1.1
75
70
A
V
ns
nC
ns
C
iss
C
oss
C
rss
V
DS
= 40 V,V
GS
= 10 V, I
D
= 10 A
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 40 V, R
L
= 4
I
D
10 A, V
GEN
= 6.0 V, R
g
= 1
V
DD
= 40 V, R
L
= 4
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 40 V, V
GS
= 0 V
f = 1 MHz
0.5
V
DS
= 40 V, V
GS
= 6 V, I
D
= 10 A
V
DS
= 40 V,V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 40 V, V
GS
= 0 V, f = 1 MHz
5560
1400
560
35.5
22
17.1
5.3
7.3
57
1.3
12
8
32
7
14
11
30
8
86
2
24
16
64
14
28
22
60
16
ns
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th
)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 6 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 20 A
85
0.0065
0.0090
0.0140
60
S
2.5
80
37
- 6.1
4.5
± 100
1
10
V
mV/°C
V
nA
μA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBM1806
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru6V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 4 V
60
100
120
80
T
C
= 25
°C
60
40
40
20
V
GS
= 3 V
0
0.0
1.0
2.0
3.0
V
GS
= 2 V
4.0
5.0
20
T
C
= 125
°C
T
C
= - 55
°C
0.0
1.4
2.8
4.2
5.6
7.0
V
GS
-
Gate-to-Source
Voltage (V)
0
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0250
10000
0.0210
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
8000
C
oss
6000
C
iss
0.0170
V
GS
= 4.5 V
0.0130
V
GS
= 6.0 V
0.0090
V
GS
= 10 V
0.0050
0
20
40
60
80
100
I
D
- Drain Current (A)
4000
2000
C
rss
0
0
12
24
36
48
V
DS
- Drain-to-Source Voltage (V)
60
On-Resistance vs. Drain Current
2.0
I
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
8
1.7
R
DS(on)
- On-Resistance
(Normalized)
I
D
= 20 A
V
DS
= 40 V
Capacitance
10
V
GS
= 10 V
6
V
DS
= 20 V
V
DS
= 60 V
1.4
V
GS
= 6.0V
1.1
4
2
0.8
0
0
8
16
24
32
Q
g
- Total
Gate
Charge (nC)
40
0.5
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
3
VBM1806
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.050
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25 °C
0.040
I
D
= 20 A
0.030
0.1
0.020
T
J
= 125
°C
0.010
0.01
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.000
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
500
0.2
400
V
GS(th)
Variance (V)
I
D
= 5 mA
- 0.4
Power (W)
- 0.1
300
200
- 0.7
I
D
= 250 μA
100
- 1.0
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
1000
I
DM
Limited
100
I
D
- Drain Current (A)
I
D
Limited
10
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
1
Limited by R
DS(on)
*
10 ms
100 ms
0.1
T
A
= 25 °C
Single
Pulse
0.01
0.01
BVDSS Limited
1
s
10
s
DC
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
4
VBM1806
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
75
60
I
D
- Drain Current (A)
Package Limited
45
30
15
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
2.5
75
60
2.0
Power (W)
Power (W)
45
1.5
30
1.0
15
0.5
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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