* Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.
** Die in wafer form.
Features
❏
Free from secondary breakdown
❏
Low power drive requirement
❏
Ease of paralleling
❏
Low C
ISS
and fast switching speeds
❏
Excellent thermal stability
❏
Integral Source-Drain diode
❏
High input impedance and high gain
Product marking for TO-243AA:
VN4F❋
Where
❋
= 2-week alpha date code
Advanced DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
❏
Motor controls
❏
Converters
❏
Amplifiers
❏
Switches
❏
Power supply circuits
❏
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Package Options
Absolute Maximum Ratings
D
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
G
D
S
TO-243AA
(SOT-89)
SGD
TO-92
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
VN2460
Thermal Characteristics
Package
TO-243AA
TO-92
†
I
D
(continuous)*
0.2A
0.16A
I
D
(pulsed)
0.6A
0.5A
Power Dissipation
@ T
C
= 25
°
C
1.6W
†
1W
θ
jc
°
C/W
15
125
θ
ja
°
C/W
78
†
170
I
DR
*
0.2A
0.16A
I
DRM
0.6A
0.5A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
600
1.5
-5.5
100
10
1
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
Conditions
V
GS
= 0V, I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 2.0mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 10V, I
D
= 100mA
V
GS
= 10V, I
D
= 100mA
V
DS
= 25V, I
D
= 100mA
V
GS
= 0V, V
DS
= 25V
f = 1.0 MHz
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
0.25
25
20
1.7
50
150
50
25
10
10
25
20
1.5
A
Ω
%/°C
m
pF
ns
V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
