VN3515
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
►
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
►
►
►
►
►
►
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Ordering Information
Device
VN3515
Package Option
TO-92
VN3515L-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
V
GS(TH)
(max)
(V)
I
D(ON)
(min)
(mA)
350
15
1.8
150
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
DRAIN
SOURCE
GATE
TO-92 (L)
Product Marking
S iV N
3515L
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (L)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
Package may or may not include the following marks: Si or
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
VN3515
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
†
(pulsed)
(mA)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
(mA)
I
DRM
150
600
1.0
125
170
150
600
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
r
t
d(ON)
t
f
t
d(OFF)
V
SD
Parameter
Gate threshold voltage
Gate body leakage
A
= 25
O
C unless otherwise specified)
Min
350
0.6
-
-
Typ
-
-
-
-
-
0.3
9.5
17
350
-
-
-
-
-
-
-
-
Max
-
1.8
10
1
100
-
15
35
-
110
30
10
20
20
65
65
1.2
Units
V
V
nA
µA
A
Ω
Conditions
V
GS
= 0V, I
D
= 100µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 0.8 Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= 4.5V, V
DS
= 10V
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 4.5V, I
D
= 100mA, T
A
= 125
O
C
Drain-to-source breakdown voltage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state
resistance
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Rise time
Turn-on delay time
Fall time
Turn-off delay time
Diode forward voltage drop
-
0.15
-
-
125
-
-
-
-
-
-
-
-
mmho V
DS
= 15V, I
D
= 100mA
pF
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
ns
V
DD
= 25V,
I
D
= 100mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 160mA
V
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
F
10%
t
d(ON)
V
DD
R
GEN
10%
90%
D.U.T.
INPUT
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
VN3515
3-Lead TO-92 Package Outline (L)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version D080408.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
website: http//www.supertex.com.
©2009
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VN3515
A020209
3
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
