tSztni-donductoi ^Ptoaueti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
VN35AK, VN66AK, VN67AK,
VN98AK, VN99AK
n-Channel Enhancement-mode
Vertical Power MOSFET
FEATURES
• High speed, high current switching
• High gain-bandwidth product
• Inherently temperature stable
• Extended safe operating area
• Simple DC biasing
• Requires almost zero current drive
APPLICATIONS
• High current analog switches
• RF power amplifiers
• Laser diode pulsers
• Line drivers
• Logic buffers
• Pulse amplifiers
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25° C unless otherwise noted)
Drain-source Voltage
VN35AK
35V
VN66AK, VN67AK
60V
VN98AK, VN99AK
9QY
Drain-gate Voltage
VN35AK
35V
VN66AK, VN67AK
60V
VN98AK. VN99AK
90V
Continuous Drain Current (see note 1)
1.2A
Peak Drain Current (see note 2)
3.0A
Gate-source Forward Voltage
,
+30V
Gate-source Reverse Voltage
-30V
Thermal Resistance, Junction to Case
20°C/W
Continuous Device Dissipation at (or below)
25'C Case Temperature
6.25W
Linear Derating Factor
50mW/°C
Operating Junction
Temperature Range
-55 to -H50°C
Storage Temperature Range
-55
to +150°C
Lead Temperature
(1/16 in. from case for 10 sec)
+300°C
Note 1. TC = 25°C; controlled by typical rDS(sn) and maximum
power dissipation.
Note 2.
Pulse width 80Msec, duty cycle 10%.
Note 3.
The Drain-source diode is an integral part
of the
MOSFET
structure.
SCHEMATIC DIAGRAM
DRAIN
Q
(OUTLINE DWG. TO-39)
GATE
O
GATE
Body Internally connected to tourc*.
Drain common lo C«M.
CHIP TOPOGRAPHY
Quality Semi-Conductors
VN35AK, VN66AK, VIM67AK, VN98AK, VN99AK
ELECTRICAL CHARACTERISTICS! (25°C unless otherwise noted)
CHARACTERISTIC
VNWAK
Mm
_1
_2
_3
4;
_S
VNMAK
VN87AK
TVP MAX MIN TYP MAX
I
2.0
100
500
10
500
100
60
0.8
0.5
2.0
100
500
10
VNMAK
VNMAK
MIN TYP MAX
90
0.8
0.5
2.0
100
500
UNIT
TEST CONDITIONS
Vus = 0, (0 - 10fiA
Vos =
Vas.
lo « 1 mA
Vas = 15V. VDS = 0
Vos = 15V. Vos = 0. T* = 125-C (Note 2)
Vos = Max. Rating. VGS = 0
Vtis
~
0.8 Max. Rating, Vos • D. TA = 125°C
(Note 2)
rvcis • 25V, VGS = o
Vps = 25V. VGS = 10V
VGS • 5V. ID » 0.3A
VGS = 10V, lo = 1.0A
(Note 1)
Vas = SV. lo
-
0.3A
BVosS
Vosith)
IQSS
Drain-Source Breakdown
Gats-Threshold Voltage
Gate-Body Leakage
3S
0.0
V
o.s
nA,
M
A
8
T
6 A
T
Dss
~7 [
C
iD'on'
_B
__9
10
VOSIC
""
11
1?
gt>
13
14 D
C.jj
V
16 N
&>
"
A
16 M
Cru
17
1
ton
18
C
tq«
10
Zero Gate Voltage
Drain Current
ON-State Drain Current
VN66AK
VN98AK
Drain-Source
Saturation Voltage VN35AK
VN67AX
VN99AK
Forward TransconduCtance
Input Capacitance
Common Source Output
Capacitance
Reverse Transfer Capacitance
Turn ON Time
Turn OFF Time
1.D
500
1.0
100
2.0
1.0
2.2
1.1
22
250
40
35
3
3
100
soo
1,0
<2JO~
1.1
22
I 1.8
2.2
170 250
40
32
5
3
3
z.o
1.0
2.2
250
40
38
7
3
3
nA
A
4.0
3.0
3.5
50
40
8
V
mfl
2.5
170
50
45
10
8
8
4.5
50
40
10
8
8
170
Vcs =
10V.
ID =
1.0A
VDS =
24V,
ID = 0.5A, f = 1 KHz
VGS • 0, Vos = 24V, f = 1MHz
pF
(Note 2)
l_8~l
10
a
ns
Not* 1. Pulse test — 80ps pulse, TWj duty cycle.
Note 2.
Sample test.
THERMAL RESPONSE
POWER DISSIPATION v* CASE
OR AMBIENT TEMPERATURE
DC SAFE OPERATING REGION
Tc = 25°C
BREAKDOWN
VOLTAGE VARIATION
WITH TEMPERATURE
0
»4d
**0
*120 «1(0
T - TEMMBATUKE CO
*200
t
TO
100
-40-10 0 »
40 60 SO 100 l» 140
V
D5
- OHAIN-TO-SOURCE VOLTAGE (VOLTS!
