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VP0808L-P002-G

MOSFET 80V 5Ohm

器件类别:半导体    分立半导体   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件参数
参数名称
属性值
产品种类
Product Category
MOSFET
制造商
Manufacturer
Microchip(微芯科技)
RoHS
Details
技术
Technology
Si
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 80 V
Id - Continuous Drain Current
- 280 mA
Rds On - Drain-Source Resistance
5 Ohms
Vgs - Gate-Source Voltage
30 V
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
Configuration
Single
Channel Mode
Enhancement
系列
Packaging
Cut Tape
系列
Packaging
Reel
Fall Time
30 ns
Pd-功率耗散
Pd - Power Dissipation
1 W
产品
Product
MOSFET Small Signal
Rise Time
40 ns
工厂包装数量
Factory Pack Quantity
2000
Transistor Type
1 P-Channel
类型
Type
FET
Typical Turn-Off Delay Time
30 ns
Typical Turn-On Delay Time
15 ns
单位重量
Unit Weight
0.016000 oz
文档预览
Supertex inc.
P-Channel Enhancement-Mode
Vertical DMOS FETs
VP0808
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode
General Description
Applications
The Supertex VP0808 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VP0808
Package
TO-92
VP0808L-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
-80
5.0
-1.1
For packaged products, -G indicates package is RoHS compliant (‘Green’).
Consult factory for die / wafer form part numbers.
Refer to Die Specification VF25 for layout and dimensions.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±30V
-55
O
C to +150
O
C
Pin Configuration
DRAIN
SOURCE
GATE
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
TO-92 (L)
Product Marking
Y YW W
S i VP
0808L
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (L)
Package may or may not include the following marks: Si or
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
VP0808
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
(mA)
I
DRM
-280
-3.0
1.0
125
170
-280
-3.0
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
= 25°C unless otherwise specified)
A
Sym
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Gate body leakage current
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on time
Rise time
Turn-off time
Fall time
Diode forward voltage drop
Min
-80
-1.0
-
-
-
-1.1
-
200
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-1.2
Max
-
-4.5
-100
-10
-500
-
5.0
-
150
60
25
15
40
30
30
-
Units
V
V
nA
µA
A
Ω
mmho
pF
Conditions
V
GS
= 0V, I
D
= -10µA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= -10V, V
DS
= -15V
V
GS
= -10V, I
D
= -1.0A
V
DS
= -10V, I
D
= -500mA
V
GS
= 0V,
V
DS
= -25V,
f = 1.0MHz
V
DD
= -25V,
I
D
= -500mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= -900mA
ns
V
Notes:
1.
All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
90%
t
(OFF)
t
r
t
d(OFF)
t
f
INPUT
-10V
Pulse
Generator
R
GEN
D.U.T.
INPUT
t
(ON)
t
d(ON)
0V
Output
R
L
OUTPUT
VDD
90%
10%
90%
10%
V
DD
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
2
Tel: 408-222-8888
www.supertex.com
VP0808
3-Lead TO-92 Package Outline (L)
D
Seating
Plane
A
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
-
.022
c
.014
-
.022
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2011
Supertex inc.
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VP0808
A031411
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
3
Supertex inc.
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参数对比
与VP0808L-P002-G相近的元器件有:VP0808L-G-P013、VP0808L-P014、VP0808L-G-P003、VP0808L-P013。描述及对比如下:
型号 VP0808L-P002-G VP0808L-G-P013 VP0808L-P014 VP0808L-G-P003 VP0808L-P013
描述 MOSFET 80V 5Ohm MOSFET N-CH Enhancmnt Mode MOSFET MOSFET 80V 5Ohm MOSFET 80V 5Ohm
产品种类
Product Category
MOSFET MOSFET MOSFET MOSFET MOSFET
制造商
Manufacturer
Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技)
RoHS Details Details No Details No
技术
Technology
Si Si Si Si Si
安装风格
Mounting Style
Through Hole Through Hole Through Hole Through Hole Through Hole
封装 / 箱体
Package / Case
TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3
Number of Channels 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel
Transistor Polarity P-Channel P-Channel P-Channel P-Channel P-Channel
Vds - Drain-Source Breakdown Voltage - 80 V - 80 V - 80 V - 80 V - 80 V
Id - Continuous Drain Current - 280 mA - 280 mA - 280 mA - 280 mA - 280 mA
Rds On - Drain-Source Resistance 5 Ohms 5 Ohms 5 Ohms 5 Ohms 5 Ohms
Vgs - Gate-Source Voltage 30 V 30 V 30 V 30 V 30 V
最小工作温度
Minimum Operating Temperature
- 55 C - 55 C - 55 C - 55 C - 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C + 150 C + 150 C + 150 C
Configuration Single Single Single Single Single
Channel Mode Enhancement Enhancement Enhancement Enhancement Enhancement
Fall Time 30 ns 30 ns 30 ns 30 ns 30 ns
Pd-功率耗散
Pd - Power Dissipation
1 W 1 W 1 W 1 W 1 W
产品
Product
MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal
Rise Time 40 ns 40 ns 40 ns 40 ns 40 ns
工厂包装数量
Factory Pack Quantity
2000 2000 2000 2000 2000
Transistor Type 1 P-Channel 1 P-Channel 1 P-Channel 1 P-Channel 1 P-Channel
Typical Turn-Off Delay Time 30 ns 30 ns 30 ns 30 ns 30 ns
Typical Turn-On Delay Time 15 ns 15 ns 15 ns 15 ns 15 ns
单位重量
Unit Weight
0.016000 oz 0.016000 oz 0.007760 oz 0.016000 oz 0.007760 oz
系列
Packaging
Reel Reel - Reel -
类型
Type
FET - FET - FET
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