VP0808B/L/M, VP1008B/L/M
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
–100
–80
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
5 @ V
GS
= –10 V
5 @ V
GS
= –10 V
5 @ V
GS
= –10 V
5 @ V
GS
= –10 V
5 @ V
GS
= –10 V
5 @ V
GS
= –10 V
V
GS(th)
(V)
–2 to –4.5
–2 to –4.5
–2 to –4.5
–2 to –4.5
–2 to –4.5
–2 to –4.5
I
D
(A)
–0.88
–0.28
–0.31
–0.79
–0.28
–0.31
Features
D
D
D
D
D
High-Side Switching
Low On-Resistance: 2.5
W
Moderate Threshold: –3.4 V
Fast Switching Speed: 40 ns
Low Input Capacitance: 75 pF
TO-205AD (TO-39)
(Case Drain)
S
1
Benefits
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
TO-226AA
(TO-92)
Applications
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Power Supply, Converter Circuits
D
Motor Control
TO-237
(Tab Drain)
S
1
S
1
G
VP0808B
VP1008B
D
Top View
2
VP0808L
VP1008L
3
G
2
VP0808M
VP1008M
3
2
G
3
D
D
Top View
Top View
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
T
A
=
25_C
T
A
=
100_C
T
A
=
25_C
T
A
=
100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
, T
stg
VP0808B
b
–80
"20
–0.88
–0.53
–3
6.25
2.5
20
VP0808L
–80
"30
–0.28
–0.17
–3
0.8
0.32
156
VP0808M
–80
"30
–0.31
–0.20
–3
1
0.4
125
VP1008B
b
–100
"20
–0.79
–0.53
–3
6.25
2.5
20
VP1008L
–100
"30
–0.28
–0.17
–3
0.8
0.32
156
VP1008M
–100
"30
–0.31
–0.20
–3
1
0.4
125
Unit
V
A
W
_C/W
_C
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Operating Junction and
Storage Temperature Range
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70218.
Siliconix
P-37655—Rev. B, 25-Jul-94
1
VP0808B/L/M, VP1008B/L/M
Specifications
a
Limits
VP0808B/L/M
VP1008B/L/M
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body
Gate Body Leakage
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= –10
mA
V
DS
= V
GS
, I
D
= –1 mA
V
DS
= 0 V, V
GS
=
"20
V
T
J
= 125_C
V
DS
= –80 V, V
GS
= 0 V
–110
–3.4
–80
–2
–4.5
"100
"500
–10
–500
–100
V
–2
–4.5
"100
"500
nA
Zero Gate Voltage Drain Current
I
DSS
T
J
= 125_C
V
DS
= –100 V, V
GS
= 0 V
T
J
= 125_C
–10
–500
–2
2.5
4.4
325
0.45
200
–1.1
5
8
200
–1.1
5
8
mA
On-State Drain Current
c
Drain-Source On Resistance
Drain Source On-Resistance
c
Forward Transconductance
c
Common Source
Output Conductance
c
I
D(on)
r
DS( )
DS(on)
g
fs
g
os
V
DS
= –15 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –1 A
T
J
= 125_C
V
DS
= –10 V, I
D
= –0.5 A
V
DS
= –7.5 V, I
D
= –0.1 A
A
W
mS
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= –25 V, V
GS
= 0 V
25 V
f = 1 MHz
75
40
18
150
60
25
150
60
25
pF
Switching
d
Turn-On
Turn On Time
t
d(on)
t
r
t
d(off)
t
f
Notes
a. T
A
= 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v2%.
d. Switching time is essentially independent of operating temperature.
V
DD
=
–25
V, R
L
= 47
W
I
D
^
–0 5
A V
GEN
= -10 V
–0.5
A,
R
G
= 25
W
11
30
20
20
15
40
30
30
15
40
ns
30
30
VPDV10
Turn-Off Time
2
Siliconix
P-37655—Rev. B, 25-Jul-94
VP0808B/L/M, VP1008B/L/M
Typical Characteristics (25_C Unless Otherwise Noted)
Ohmic Region Characteristics
–2.0
T
J
= 25_C
–1.6
I
D
– Drain Current (A)
V
GS
= –10 V
I
D
– Drain Current (mA)
–9 V
–8 V
–7 V
–0.8
–6 V
–0.4
–5 V
–4 V
0
0
–1
–2
–3
–4
–5
V
DS
– Drain-to-Source Voltage (V)
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
V
DS
– Drain-to-Source Voltage (V)
–16
–20
T
J
= 25_C
V
GS
= –4.0 V
Output Characteristics for Low Gate Drive
–1.2
–12
–3.8 V
–8
–3.6 V
–3.4 V
–3.2 V
–4
–0.5
Transfer Characteristics
7
T
J
= –55_C
r
DS(on)
– On-Resistance (
W
)
6
On-Resistance vs. Gate-to-Source Voltage
T
J
= 25_C
–0.4
I
D
– Drain Current (A)
V
DS
= –10 V
–0.3
125_C
25_C
I
D
= 0.1 A
5
4
3
2
1
0.5 A
1.0 A
–0.2
–0.1
0
0
–2
–4
–6
–8
–10
V
GS
– Gate-Source Voltage (V)
0
0
–4
–8
–12
–16
–20
V
GS
– Gate-Source Voltage (V)
10
r
DS(on)
– Drain-Source On-Resistance (
W
)
On-Resistance vs. Drain Current
r
DS(on)
– Drain-Source On-Resistance
(Normalized)
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Normalized On-Resistance
vs. Junction Temperature
V
GS
= –10 V
I
D
= 0.5 A
8
6
4
V
GS
= –10 V
2
0
0
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
I
D
– Drain Current (A)
–50
–10
30
70
110
150
T
J
– Junction Temperature (_C)
Siliconix
P-37655—Rev. B, 25-Jul-94
3
VP0808B/L/M, VP1008B/L/M
Typical Characteristics (25_C Unless Otherwise Noted)
–10
V
DS
= –5 V
I
D
– Drain Current (mA)
160
–1
T
J
= 150_C
25_C
125_C
–0.1
–55_C
C – Capacitance (pF)
Threshold Region
200
V
GS
= 0 V
f = 1 MHz
Capacitance
120
C
iss
C
oss
40
C
rss
80
–0.01
–1.0
0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–4.5
0
–10
–20
–30
–40
–50
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
–15.0
V
GS
– Gate-to-Source Voltage (V)
–12.5
–10.0
V
DS
= –50 V
–7.5
–5.0
–2.5
0
0
100
200
300
400
500
Q
g
– Total Gate Charge (pC)
1
10
–80 V
I
D
= –0.5 A
t – Switching Time (ns)
100
Drive Resistance Effects on Switching
t
r
t
f
t
d(off)
10
t
d(on)
V
DD
= –25 V
R
L
= 50
W
V
GS
= 0 to –10 V
I
D
= –500 mA
20
50
R
G
– Gate Resistance (W)
100
1
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
t
1
Notes:
P
DM
0.01
Single Pulse
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
0.01
0.1
1
10
100
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
4
Siliconix
P-37655—Rev. B, 25-Jul-94
