VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operation junction temperature
2
2
3
1
1
Cathode
3
Anode
• Designed and qualified
JEDEC
®
-JESD 47
• UL E78996 approved
according
to
• Fully isolated package (V
INS
= 2500 V
RMS
)
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
TO-220 FULL-PAK
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-220FP
10 A
1000 V, 1200 V
1.33 V
140 A
80 ns
150 °C
Single die
0.6
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-10ETF1..FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, 100 A/µs
10 A, T
J
= 25 °C
Sinusoidal waveform
CHARACTERISTICS
VALUES
1000 to 1200
10
140
80
1.33
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETF10FPPbF, VS-10ETF10FP-M3
VS-10ETF12FPPbF, VS-10ETF12FP-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
1300
I
RRM
AT 150 °C
mA
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 95 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
10
115
140
66
94
940
A
2
s
A
2
s
A
UNITS
Revision: 11-Feb-16
Document Number: 94093
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
10 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.33
22.9
0.96
0.1
4
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 10 A
pk
25 A/μs
25 °C
VALUES
310
4.7
1.05
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
rr
t
Q
rr
I
RM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance
junction to case
Maximum thermal resistance
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220 FULL-PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth, and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
2.5
62
0.5
2
0.07
6 (5)
12 (10)
10ETF10FP
10ETF12FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
Revision: 11-Feb-16
Document Number: 94093
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series
www.vishay.com
Vishay Semiconductors
24
150
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
130
10ETF.. Series
R
thJC
(DC) = 2.5 °C/W
20
16
12
8
4
0
Ø
120
110
100
90
80
70
0
2
4
6
30°
60°
DC
180°
120°
90°
60°
30°
Conduction angle
RMS limit
Ø
120°
180°
90°
8
10
12
Conduction period
10ETF.. Series
T
J
= 150 °C
0
2
4
6
8
10
12
14
16
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
Maximum Allowable Case
Temperature (°C)
140
130
10ETF.. Series
R
thJC
(DC) = 2.5 °C/W
130
120
At any rated load condition and with
rated Vrrm applied following
surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
Peak Half Sine Wave
Forward Current (A)
110
100
90
80
70
60
50
40
30
Ø
120
110
100
90
30°
80
70
0
2
4
6
8
10
60°
90°
120°
Conduction period
DC
180°
12
14
16
18
VS-10ETF..
Series
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
140
180°
120°
90°
60°
30°
RMS limit
Ø
Maximum Average Forward
Power Loss (W)
14
12
10
8
6
4
2
0
0
2
120
Peak Half Sine Wave
Forward Current (A)
100
80
60
40
20
0
0.01
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
Conduction angle
10ETF.. Series
T
J
= 150 °C
4
6
8
10
VS-10ETF..
Series
0.1
1
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 94093
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series
www.vishay.com
Vishay Semiconductors
2.0
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
Instantaneous Forward Current (A)
1000
T
J
= 150 °C
T
J
= 25 °C
100
Q
rr
- Typical Reverse
Recovery Charge (µC)
1.6
I
FM
= 8 A
1.2
I
FM
= 5 A
0.8
I
FM
= 2 A
0.4
I
FM
= 1 A
10
10ETF.. Series
1
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
40
80
120
160
200
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.6
0.5
10ETF.. Series
T
J
= 25 °C
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 8 A
I
FM
= 10 A
5
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
0.4
0.3
0.2
0.1
0
0
40
80
120
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
4
3
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
2
1
0
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
0.8
10ETF.. Series
T
J
= 150 °C
0.6
I
FM
= 1 A
I
FM
= 2 A
I
FM
= 5 A
I
FM
= 8 A
I
FM
= 10 A
20
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 8 A
12
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
4
0.4
I
rr
- Typical Reverse
Recovery Current (A)
200
t
rr
- Typical Reverse
Recovery Time (µs)
16
8
0.2
0
0
40
80
120
160
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 11-Feb-16
Document Number: 94093
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF1...FPPbF Series, VS-10ETF1...FP-M3 Series
www.vishay.com
Vishay Semiconductors
25
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
I
rr
- Typical Reverse
Recovery Current (A)
20
I
FM
= 8 A
15
I
FM
= 5 A
I
FM
= 2 A
10
I
FM
= 1 A
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (°C/W)
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
1
Steady state
value
(DC operation)
Single pulse
10ETF.. Series
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 94093
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
