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VS-112CNQ030A

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30V V(RRM), Silicon, PLASTIC, D-61-8, 3 PIN

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
R-PSFM-T3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
其他特性
FREE WHEELING DIODE, HIGH RELIABILITY
应用
POWER
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
5100 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
30 V
表面贴装
NO
技术
SCHOTTKY
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
VS-112CNQ030A PbF Series
Vishay High Power Products
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 55 A
VS-112CNQ030APbF
Base
common
cathode
FEATURES
• 150 °C T
J
operation
• Center tap module
• Very low forward voltage drop
1
Anode
1
2
Common
cathode
3
Anode
2
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
D-61-8
VS-112CNQ030ASMPbF
1
Anode
1
2
Common
cathode
3
Anode
2
• New fully transfer-mold low profile, small footprint, high
current package
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
D-61-8-SM
VS-112CNQ030ASLPbF
Base
common
cathode
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
1
D-61-8-SL
Anode
1
3
Anode
2
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 55 A
30 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
55 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
110
30
5100
0.39
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-112CNQ030APbF
30
UNITS
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94124
Revision: 16-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
VS-112CNQ030A PbF Series
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated
load condition and
with rated V
RRM
50 % duty cycle at T
C
= 131 °C, rectangular waveform
110
5100
A
880
36
8
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
55
A
UNITS
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 55 A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 8 A, L = 1.12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
55 A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
110 A
55 A
110 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
V
R
= Rated V
R
T
J
= 125 °C
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
400
5100
5.5
10 000
pF
nH
V/μs
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
VALUES
0.49
0.57
0.39
0.51
3.5
mA
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink (D-61-8 only)
Approximate weight
Mounting torque
(D-61-8 only)
minimum
maximum
Case style D-61
Marking device
Case style D-61-8-SM
Case style D-61-8-SL
SYMBOL
T
J
, T
Stg
DC operation
See fig. 4
DC operation
R
thCS
Mounting surface, smooth and greased
Device flatness < 5 mils
TEST CONDITIONS
VALUES
- 55 to 150
0.5
0.25
0.30
7.8
0.28
40 (35)
58 (50)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
R
thJC
112CNQ030A
112CNQ030ASM
112CNQ030ASL
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94124
Revision: 16-Apr-10
VS-112CNQ030A PbF Series
Schottky Rectifier
Vishay High Power Products
New Generation 3 D-61 Package, 2 x 55 A
1000
1000
T
J
= 150 °C
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
100
T
J
= 125 °C
T
J
= 100 °C
100
10
T
J
= 75 °C
1
T
J
= 50 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0
5
10
15
20
25
30
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
10 000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
0
5
10
15
20
25
30
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
0.01
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Document Number: 94124
Revision: 16-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
VS-112CNQ030A PbF Series
Vishay High Power Products
150
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 55 A
35
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS limit
DC
Allowable Case Temperature (°C)
140
DC
Average Power Loss (W)
30
25
20
15
10
5
0
130
Square wave (D = 0.50)
80
% rated V
R
applied
120
See note (1)
110
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
1000
At any rated load condition and
with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94124
Revision: 16-Apr-10
VS-112CNQ030A PbF Series
Schottky Rectifier
Vishay High Power Products
New Generation 3 D-61 Package, 2 x 55 A
ORDERING INFORMATION TABLE
Device code
VS-
1
112
2
C
3
N
4
Q
5
030
6
A
7
PbF
8
1
-
-
-
-
-
-
-
HPP product suffix
Current rating (110 A)
Circuit configuration:
C = Common cathode
Package:
N = D-61
Schottky “Q” series
Voltage rating (030 = 30 V)
Package style:
A = D-61-8
ASM = D-61-8-SM
ASL = D-61-8-SL
2
3
4
5
6
7
8
-
None = Standard production
PbF = Lead (Pb)-free
Standard pack quantity: A = 10 pieces; ASM/ASL = 20 pieces
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95354
www.vishay.com/doc?95356
Document Number: 94124
Revision: 16-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
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