VS-301U(R) Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 300 A
FEATURES
• Wide current range
• High voltage rating up to 2500 V
• High surge current capabilities
• Stud cathode and stud anode version
• High resistance to acceleration
• Designed and qualified for industrial level
DO-205AB (DO-9)
RoHS
COMPLIANT
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
300 A
DO-205AB (DO-9)
Single diode
• Converters
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
301U(R)
PARAMETER
TEST CONDITIONS
160 TO 200
330
I
F(AV)
I
F(RMS)
50 Hz
I
FSM
60 Hz
50 Hz
60 Hz
V
RRM
T
J
Range
T
C
120
520
8250
8640
340
311
1600 to 2000
-40 to 180
250
300
120
470
6050
A
6335
183
167
2500
-40 to 180
V
°C
kA
2
s
A
°C
A
UNITS
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
160
VS-301U(R)
200
250
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1600
2000
2500
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
2100
2600
15
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 25-Nov-13
Document Number: 93509
1
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VS-301U(R) Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
TEST CONDITIONS
301U(R)
160 TO 200
330
120
520
8250
8640
6940
Sinusoidal half wave,
initial T
J
= T
J
maximum
7270
340
311
241
220
3400
0.77
0.84
0.49
0.49
1.22
250
300
120
470
6050
6335
5090
5330
183
167
129
118
1830
0.90
0.97
0.59
m
r
f2
V
FM
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 942 A, T
J
= T
J
maximum, t
p
= 10 ms sinusoidal
wave
0.55
1.46
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
A
I
F(AV)
I
F(RMS)
180° conduction, half sine wave
DC at T
C
= 115 °C (up to 2000 V), T
C
= 102 °C (2500 V)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed mounting torque
+0 -20 %
301U
303U
Weight
305U
307U
309U
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
TEST CONDITIONS
VALUES
-40 to 180
°C
-40 to 200
0.14
K/W
0.08
37
28
250 ± 5
152 ± 5
177 ± 5
197 ± 5
160 ± 5
DO-205AB (DO-9)
g
N·m
UNITS
Revision: 25-Nov-13
Document Number: 93509
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For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-301U(R) Series
www.vishay.com
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
80 TO 200
0.015
0.018
0.023
0.034
0.056
250
0.015
0.018
0.023
0.034
0.056
RECTANGULAR CONDUCTION
80 TO 200
0.011
0.019
0.025
0.035
0.057
250
0.011
0.019
0.025
0.035
0.057
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
301U(R) S
eries(1600V to 2000V)
R
thJC
(DC) = 0.14 K/ W
Maximum Allowable Case T
emperat ure (°C)
Maximum Allowable Case T
emperature (°C)
180
170
160
150
140
130
180
301U(R S
) eries (2500V)
170
160
150
140
30°
130
120
110
0
50
100
150
200
250
300
350
Average Forward Current (A)
60°
90°
120°
Conduction Angle
R
thJC
(DC) = 0.14 K/ W
Conduction Angle
30°
120
110
0
50
100
150
60°
180°
90°
120°
180°
200
250
300
350
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Allowable Cas T
e emperature (°C)
Maximum Allowable Cas T
e emperature (°C)
180
170
160
150
140
130
120
110
100
0
100
200
300
400
30°
60°
90°
120°
180°
DC
500
600
Conduction Period
180
301U(R S
) eries (2500V)
170
160
150
140
130
120
110
100
90
0
100
200
300
400
500
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
Conduction Period
301U(R S
) eries(1600V to 2000V)
R
thJC
(DC) = 0.14 K/ W
R
thJC
(DC) = 0.14 K/ W
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Revision: 25-Nov-13
Document Number: 93509
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For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-301U(R) Series
www.vishay.com
Vishay Semiconductors
Maximum Avera ge F
orward P
ower Loss (W)
400
350
300
250
200
0.7
K/ W
180°
120°
90°
60°
30°
RMSLimit
R
t
A
hS
2
0.
W
K/
0.
3
K/
W
=
1
0.
W
K/
ta
el
-D
R
150
100
50
0
0
50
100
150
Conduction Angle
301U(R) S
eries
(1600V to 2000V)
T
J
= 180°C
200
250
300
1.5 K
/
3 K/ W
W
350
20
40
60
80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Maximum Average F
orward Power Los (W)
s
550
500
450
400
350
300
250
RMSLimit
200
150
100
50
0
Conduc tion Period
0.7
K/
W
DC
180°
120°
90°
60°
30°
R
th
SA
=
0.
1
K/
W
0.
2
K/
W
-D
el
ta
R
0.3
K/
W
301U(R) S
eries
(1600V to 2000V)
T = 180°C
J
0
100
200
300
400
500
1.5 K/
W
3 K/ W
600 40
20
60
80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Maximum Average F
orward Power L (W)
oss
450
400
350
300
250
200
150
100
50
0
0
50
100
150
200
250
300
20
Conduction Angle
180°
120°
90°
60°
30°
R Limit
MS
R
th
SA
0.
2
=
1
0.
K/
W
W
K/
ta
el
-D
0.
3
K/
W
R
0.7
K/ W
301U(R S
) eries (2500V)
T = 180°C
J
1.5 K
/
W
3 K/ W
40
60
80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 6 - Forward Power Loss Characteristics
Revision: 25-Nov-13
Document Number: 93509
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-301U(R) Series
www.vishay.com
Vishay Semiconductors
Maximum Average F
orward Power Los (W)
s
600
500
400
300
DC
180°
120°
90°
60°
30°
R
th
SA
=
0.
1
K/
W
0.
2K
/W
0.3
K/
W
-D
el
ta
R
RMS Limit
200
100
0
Conduction Period
0.7
K/ W
301U(R S
) eries (2500V)
T = 180°C
J
1.5 K/ W
3 K/ W
0
100
200
300
400
500 40
20
60
80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 7 - Forward Power Loss Characteristics
Peak Half S Wave F
ine
orward Current (A)
Peak Half S Wave F
ine
orward Current (A)
8000
7000
6000
5000
4000
3000
2000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 180°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
6000
At Any R
ated Load Condition And With
R
ated V
RRM
Applied Following S
urge.
Initial T = 180°C
J
5000
@60 Hz 0.0083 s
@50 Hz 0.0100 s
4500
5500
4000
3500
3000
2500
2000
1500
1
10
100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
301U(R) S
eries
(1600V to 2000V)
10
100
301U(R) S
eries (2500V)
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 8 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Peak Half S Wave F
ine
orward Current (A)
8000
7000
6000
5000
4000
3000
2000
Peak Half S Wave F
ine
orward Current (A)
9000
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 180 °C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
6000
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 180 °C
J
5000
No Voltage Reapplied
Rated V
RRM
Reapplied
4000
3000
2000
301U(R S
) eries (2500V)
1000
0.01
0.1
Pulse T
rain Duration (s)
1
301U(R) S
eries
(1600V to 2000V)
0.1
Pulse T
rain Duration (s)
1
1000
0.01
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 11 - Maximum Non-Repetitive Surge Current
Revision: 25-Nov-13
Document Number: 93509
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
