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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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SUP40N25-60
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 30 V
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 250 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 250 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 6 V, I
D
= 15 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
a
Symbol
Test Conditions
Min .
250
2
Typ.
Max.
Unit
4
± 250
1
50
250
V
nA
µA
A
70
0.049
0.060
0.121
0.163
0.051
70
5000
0.064
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DS
= 15 V, I
D
= 20 A
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
300
170
95
140
pF
V
DS
= 125 V, V
GS
= 10 V, I
D
= 45 A
f = 1 MHz
V
DD
= 100 V, R
L
= 2.78
I
D
45 A, V
GEN
= 10 V, R
g
= 2.5
28
34
1.6
22
220
40
145
35
330
60
220
45
70
nC
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
A
V
ns
A
µC
I
F
= 45 A, V
GS
= 0 V
I
F
= 45 A, di/dt = 100 A/µs
1
150
12
0.9
1.5
225
18
2
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP40N25-60
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 thru 7 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6V
80
100
60
60
40
40
T
C
= 125 °C
20
25 °C
- 55 °C
0
20
5V
4V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
150
T
C
= - 55 °C
g
fs
- Transconductance (S)
25 °C
R
DS(on)
- On-Resistance ()
120
0.08
0.10
Transfer Characteristics
90
125 °C
60
0.06
V
GS
= 6 V
V
GS
= 10 V
0.04
30
0.02
0
0
10
20
30
40
50
60
0.00
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
7000
6000
C
iss
C - Capacitance (pF)
5000
4000
3000
2000
1000
0
0
40
80
120
160
200
V
DS
- Drain-to-Source Voltage (V)
C
rss
20
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
16
V
DS
= 125 V
I
D
= 45 A
12
8
4
C
oss
0
0
30
60
90
120
150
180
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP40N25-60
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.8
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V
I
D
= 20 A
I
S
- Source Current (A)
100
2.4
2.0
T
J
= 150 °C
10
T
J
= 25 °C
1.6
1.2
0.8
0.4
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
100
300
290
Source-Drain Diode Forward Voltage
I
D
= 1.0 mA
280
10
I
Dav
(A)
V
DS
(V)
I
AV
(A) at T
A
= 25 °C
270
260
250
240
I
AV
(A) at T
A
= 150 °C
0.1
0.00001
0.0001
0.001
0.01
t
in
(s)
0.1
1
230
- 50
- 25
0
25
50
75
100
125
150
175
1
T
J
- Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown vs. Junction Temperature
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Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?73132.
Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
