VS-ENQ030L120S
www.vishay.com
Vishay Semiconductors
EMIPAK-1B PressFit Power Module
Neutral Point Clamp Topology, 30 A
FEATURES
• Ultrafast Trench IGBT technology
• HEXFRED
®
and silicon carbide diode technology
• PressFit pins technology
• Exposed Al
2
O
3
substrate with low thermal resistance
• Low internal inductances
• PressFit pins locking technology. Patent # US.263.820 B2
EMIPAK-1B
(package example)
• UL approved file E78996
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
TRENCH IGBT 1200 V STAGE
V
CES
V
CE(ON)
typical at I
C
= 30 A
I
C
at T
C
= 102 °C
V
CES
V
CE(ON)
typical at I
C
= 30 A
I
C
at T
C
= 106 °C
Speed
Package
Circuit
1200 V
2.12 V
30 A
DESCRIPTION
VS-ENQ030L120S is an integrated solution for a neutral
point clamp topology in a single package. The EMIPAK-1B
package is easy to use thanks to the PressFit pins and the
exposed substrate provides improved thermal performance.
The optimized layout also helps to minimize stray
parameters, allowing for better EMI performance.
TRENCH IGBT 600 V STAGE
600 V
1.42 V
30 A
8 kHz to 30 kHz
EMIPAK-1B
3-levels neutral point clamp topology
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Operating junction temperature
Storage temperature range
RMS isolation voltage
Q1 - Q4 TRENCH IGBT 1200 V
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
V
CES
V
GES
I
CM
I
LM (1)
T
C
= 25 °C
Continuous drain current
I
C
T
C
= 80 °C
T
SINK
= 80 °C
Power dissipation
P
D
T
C
= 25 °C
T
C
= 80 °C
1200
± 30
120
120
61
40
21
216
121
W
A
V
SYMBOL
T
J
T
Stg
V
ISOL
T
J
= 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
TEST CONDITIONS
MAX.
150
-40 to +150
3500
UNITS
°C
V
A
PATENT(S):
www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.
Revision: 16-Jun-16
Document Number: 94684
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ENQ030L120S
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Q2 - Q3 TRENCH IGBT 600 V
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
V
CES
V
GES
I
CM
I
LM (2)
T
C
= 25 °C
Continuous collector current
I
C
T
C
= 80 °C
T
SINK
= 80 °C
Power dissipation
D1 - D4 HEXFRED ANTIPARALLEL DIODE
Single pulse forward current
I
FSM
I
F
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C
T
C
= 25 °C
Diode continuous forward current
T
C
= 80 °C
T
SINK
= 80 °C
Power dissipation
P
D
T
C
= 25 °C
T
C
= 80 °C
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C
T
C
= 25 °C
Diode continuous forward current
I
F
T
C
= 80 °C
T
SINK
= 80 °C
Power dissipation
P
D
T
C
= 25 °C
T
C
= 80 °C
180
46
30
17
187
105
W
A
A
P
D
T
C
= 25 °C
T
C
= 80 °C
600
± 20
130
130
64
42
25
174
97
W
A
V
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Vishay Semiconductors
A
D2 - D3 SILICON CARBIDE ANTIPARALLEL DIODE
Single pulse forward current
I
FSM
150
40
28
20
140
79
W
A
A
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1)
V
CC
= 600 V, V
GE
= 15 V, L = 500 μH, R
g
= 4.7
,
T
J
= 150 °C
(2)
V
CC
= 300 V, V
GE
= 15 V, L = 500 μH, R
g
= 4.7
,
T
J
= 150 °C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Q1 - Q4 TRENCH IGBT 1200 V
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
BV
CES
V
CE(ON)
V
GE(th)
V
GE(th)
/T
J
g
fe
V
GE
I
CES
I
GES
V
GE
= 0 V, I
C
= 100 μA
V
GE
= 15 V, I
C
= 30 A
V
GE
= 15 V, I
C
= 30 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 1.0 mA
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
V
CE
= 20 V, I
C
= 30 A
V
CE
= 20 V, I
C
= 30 A
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
V
GE
= ± 30 V, V
CE
= 0 V
1200
-
-
2.6
-
-
-
-
-
-
-
2.12
2.31
4.6
- 14
36
7.1
0.001
0.5
-
-
2.52
-
6.6
-
-
-
0.23
-
± 200
mV/°C
S
V
mA
nA
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Revision: 16-Jun-16
Document Number: 94684
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ENQ030L120S
www.vishay.com
Vishay Semiconductors
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Q2 - Q3 TRENCH IGBT 600 V
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
D1 - D4 ANTIPARALLEL DIODE
Forward voltage drop
D2 - D3 ANTIPARALLEL DIODE
Forward voltage drop
V
FM
I
F
= 20 A
I
F
= 20 A T
J
= 125 °C
-
-
1.54
1.86
1.8
-
V
V
FM
I
F
= 20 A
I
F
= 20 A, T
J
= 125 °C
-
-
2.42
2.32
3.18
-
V
BV
CES
V
CE(ON)
V
GE(th)
V
GE(th)
/T
J
g
fe
V
GE
I
CES
I
GES
V
GE
= 0 V, I
C
= 150 μA
V
GE
= 15 V, I
C
= 30 A
V
GE
= 15 V, I
C
= 30 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 1.4 mA
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
V
CE
= 20 V, I
C
= 30 A
V
CE
= 20 V, I
C
= 30 A
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
V
GE
= ± 20 V, V
CE
= 0 V
600
-
-
3.6
-
-
-
-
-
-
-
1.42
1.56
5.6
-17
24
10
0.0003
0.028
-
-
1.87
-
7.1
-
-
-
0.23
-
± 200
mV/°C
S
V
mA
nA
V
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Q1 - Q4 TRENCH IGBT (WITH FREEWHEELING D1 - D4 ANTIPARALLEL DIODE)
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Q
g
Q
ge
Q
gc
E
ON
E
OFF
E
TOT
t
d(on)
t
r
t
d(off)
t
f
E
ON
E
OFF
E
TOT
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
T
J
= 150 °C, I
C
= 120 A, V
CC
= 600 V,
V
P
= 1200 V, R
g
= 4.7
,
V
GE
= 15 V to 0 V
I
C
= 30 A
V
CC
= 600 V
V
GE
= 15 V
R
g
= 4.7
L = 500 μH
T
J
= 125 °C
(1)
I
C
= 30 A
V
CC
= 600 V
V
GE
= 15 V
R
g
= 4.7
L = 500 μH
(1)
I
C
= 30 A
V
CC
= 600 V
V
GE
= 15 V
-
-
-
-
-
-
-
-
-
-
-
-
157
21
69
0.52
0.9
1.42
93
39
133
156
0.64
1.61
2.24
-
-
-
-
-
-
-
93
39
136
193
3338
124
75
Fullsquare
-
-
-
-
-
-
-
pF
ns
-
-
-
-
-
-
-
-
-
-
-
-
mJ
ns
mJ
nC
Revision: 16-Jun-16
Document Number: 94684
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ENQ030L120S
www.vishay.com
Vishay Semiconductors
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Q2 - Q3 TRENCH IGBT (WITH FREEWHEELING EXTERNAL TO-247 DIODE DISCRETE 30ETH06)
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
D1 - D4 ANTIPARALLEL DIODE
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
D2 - D3 ANTIPARALLEL DIODE
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
V
R
= 200 V
I
F
= 20 A
dl/dt = 500 A/μs
V
R
= 200 V
I
F
= 20 A
dl/dt = 500 A/μs, T
J
= 125 °C
-
-
-
-
-
-
30
4.8
73
31
5
78
-
-
-
-
-
-
ns
A
nC
ns
A
nC
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
V
R
= 400 V
I
F
= 20 A
dl/dt = 500 A/μs
V
R
= 400 V
I
F
= 20 A
dl/dt = 500 A/μs, T
J
= 125 °C
-
-
-
-
-
-
103
16
800
135
21
1412
-
-
-
-
-
-
ns
A
nC
ns
A
nC
Q
g
Q
ge
Q
gc
E
ON
E
OFF
E
TOT
t
d(on)
t
r
t
d(off)
t
f
E
ON
E
OFF
E
TOT
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
T
J
= 150 °C, I
C
= 130 A
V
CC
= 300 V, V
P
= 600 V
R
g
= 4.7
,
V
GE
= 15 V to 0 V
I
C
= 30 A
V
CC
= 300 V
V
GE
= 15 V
R
g
= 4.7
L = 500 μH
T
J
= 125 °C
(1)
I
C
= 30 A
V
CC
= 300 V
V
GE
= 15 V
R
g
= 4.7
L = 500 μH
(1)
I
C
= 48 A
V
CC
= 400 V
V
GE
= 15 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
95
28
35
0.23
0.26
0.49
70
31
91
87
0.33
0.48
0.61
70
31
96
117
3025
245
90
Fullsquare
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
ns
mJ
ns
mJ
nC
Note
(1)
Energy losses include “tail” and diode reverse recovery.
Revision: 16-Jun-16
Document Number: 94684
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ENQ030L120S
www.vishay.com
Vishay Semiconductors
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER
Resistance
B-value
Maximum operating temperature
Dissipation constant
Thermal time constant
SYMBOL
R
25
R
100
B
25/50
T
C
= 25 °C
T
C
= 100 °C
R
2
= R
25
exp. [B
25/50
(1/T
2
- 1/(298.15 K))]
TEST CONDITIONS
VALUE
5000
493 ± 5 %
3375 ± 5 %
220
2
8
UNITS
K
°C
mW/°C
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Q1 - Q4 TRENCH IGBT 1200 V - Junction to case thermal resistance (per switch)
Q2 - Q3 TRENCH IGBT 600 V- Junction to case thermal resistance (per switch)
D1 - D4 AP diode - Junction to case thermal resistance (per diode)
D2 - D3 AP diode - Junction to case thermal resistance (per diode)
Q1 - Q4 TRENCH IGBT 1200 V - Case to sink thermal resistance (per switch)
Q2 - Q3 TRENCH IGBT 600 V - Case to sink thermal resistance (per switch)
D1 - D4 AP diode - Case to sink thermal resistance (per diode)
D2 - D3 AP diode - Case to sink thermal resistance (per diode)
Case to sink thermal resistance (per module)
Mounting torque (M4)
Weight
Note
(1)
Mounting surface flat, smooth, and greased
R
thCS (1)
R
thJC
SYMBOL
MIN.
-
-
-
-
-
-
-
-
-
2
-
TYP.
-
-
-
-
0.75
0.77
0.78
0.65
0.1
-
28
MAX.
0.58
0.72
0.67
0.89
-
-
-
-
-
3
-
Nm
g
°C/W
UNITS
60
55
50
45
40
35
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
60
55
50
45
40
35
V
GE
= 9 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
I
C
(A)
I
C
(A)
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
CE
(V)
Fig. 1 - Typical Q1 - Q4 Trench IGBT 1200 V
Output Characteristics V
GE
= 15 V
V
CE
(V)
Fig. 2 - Typical Q1 - Q4 Trench IGBT 1200 V
Output Characteristics T
J
= 125 °C
Revision: 16-Jun-16
Document Number: 94684
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
NXP MCU
