VS-SD2000C..L Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Hockey PUK Version), 2100 A
FEATURES
• Wide current range
• High voltage ratings up to 1000 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style B-PUK (DO-200AB)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
B-PUK (DO-200AB)
TYPICAL APPLICATIONS
• Converters
2100 A
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
B-PUK (DO-200AB)
Single
• Power supplies
• High power drives
• Auxiliary system supplies for traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
Range
TEST CONDITIONS
VALUES
2100
55
3900
25
23 900
25 000
2857
2608
400 to 1000
-40 to +180
UNITS
A
°C
A
°C
A
kA
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-SD2000C..L
08
10
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1000
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1100
60
I
RRM
MAXIMUM
AT T
J
= 180 °C
mA
Revision: 11-Jan-18
Document Number: 93540
1
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-SD2000C..L Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
2100 (1040)
55 (85)
3900
23 900
25 000
20 100
Sinusoidal half wave,
initial T
J
= T
J
maximum
21 000
2857
2608
2020
1844
28 570
0.74
0.86
0.13
mW
r
f2
V
FM
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 6000 A, T
J
= T
J
maximum, t
p
= 10 ms sinusoidal wave
0.12
1.55
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to +180
-55 to +200
0.073
0.031
14 700
(1500)
255
K/W
N
(kg)
g
UNITS
°C
B-PUK (DO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.009
0.011
0.014
0.020
0.036
DOUBLE SIDE
0.009
0.011
0.014
0.020
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
0.006
0.011
0.015
0.021
0.036
DOUBLE SIDE
0.006
0.011
0.015
0.021
0.036
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93540
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD2000C..L Series
www.vishay.com
Vishay Semiconductors
180
Maxim um Allowab le Heatsink Tem perature ( °C)
160
140
120
100
80
30°
60
40
20
0
0
1000
2000
3000
4000
Average Forward Curren t (A)
60°
90°
120°
180°
DC
C o ndu ctio n Pe rio d
180
M a xim u m A llo w a b le H e a ts in k Te m p e ra t u re (°C )
160
140
120
100
80
60
40
0
2 00
40 0
SD 2 0 0 0 C ..L Se rie s
(Sin g le S id e C o o le d )
R
th J-hs
(D C ) = 0 .0 7 3 K / W
SD2000C..L Series
(Double Side Cooled)
R
thJ-h s
(DC) = 0.031 K/W
C o nduc tio n An gle
30°
6 00
60 °
18 0°
90 °
120°
8 0 0 10 0 0 1 2 00 1 4 00
A v e ra g e F o rw a rd C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 80
Maxim um Allowable Heatsink Temperatur e (°C)
1 60
1 40
1 20
1 00
80
60
40
20
0
0
5 00
1000
1 500
200 0
2 500
Average Forward Current (A)
30°
60 °
90 °
120°
180°
DC
C o nduc tion Pe riod
4000
M aximum Average Forward Power L oss (W)
SD 2000C..L Series
(Single Sid e Cooled)
R
thJ-h s
(DC) = 0.073 K/W
3500
3000
2500
2000
1500
1000
500
0
0
500
1000
1500
2000
2500
Average Forward Curren t (A)
C on duc tio n A ngle
180°
120°
90°
60°
30°
RM S Limit
SD2000C..L Series
T
J
= 180°C
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
180
Maxim um Allowable Heatsin k Tem perature ( °C)
160
140
120
100
80
60
40
20
0
0
500
Maxim um Average Forward Pow er Loss (W )
SD2000C..L Series
(Double Side Cooled)
R
th J- hs
(DC) = 0.031 K/W
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
1000
2000
3000
4000
Average Forwa rd Current (A)
C o ndu ctio n Pe rio d
C o nd uctio n A ng le
DC
180°
120°
90°
60°
30°
RMS Limit
30°
60°
90°
120°
180°
SD 2000C..L Series
T
J
= 180°C
1000
1500
2000
2500
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93540
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD2000C..L Series
www.vishay.com
Vishay Semiconductors
30000
Peak Half Sine W ave Forward Curren t (A)
M aximum Non Repet itive Surge Current
Versus Pulse Train Duration.
In itial T
J
= 180 °C
No V oltage Reapplied
Rated V
R RM
Reapplied
25000
Peak Half Sine W ave Forward Current (A)
20000
At Any Rated Load Cond ition An d W ith
Rated V
RRM
Applied Following Surge.
Initial T
J
= 180 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
25000
20000
15000
15000
10000
SD2000C..L Series
5000
1
10
10 0
Nu m be r O f E qua l A m p litude H alf C y cle C urre nt P ulse s (N )
10000
SD 2000C..L Series
5000
0.01
0.1
Pulse Train Duration (s)
1
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
100000
In stantaneous F orward Current (A)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
T
J
= 25°C
10000
T
J
= 180°C
1000
SD2000C..L Series
100
0.5
1
1.5
2
2.5
3
3.5
In stantaneous Forward V oltage (V )
Fig. 9 - Forward Voltage Drop Characteristics
0 .1
T ra n sie n t T h e rm a l Im p e d a n c e Z
thJ-hs
( K / W )
SD 2 0 0 0 C ..L Se rie s
0 .0 1
S te ad y St a te V alu e
R
th J-h s
= 0 .0 7 3 K /W
( S in g le Side C o o le d)
R
th J-h s
= 0 .0 3 1 K /W
( D o ub le S id e C o o le d )
( D C O p e ra t io n )
0 .0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
10 0
Sq u are W a v e Pu lse D u ra tio n ( s)
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Revision: 11-Jan-18
Document Number: 93540
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD2000C..L Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
SD
2
-
-
-
-
-
-
-
200
3
0
4
C
5
10
6
L
7
Vishay Semiconductors product
Diode
Essential part number
0 = standard recovery
C = ceramic PUK
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
L = PUK case B-PUK (DO-200AB)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95246
Revision: 11-Jan-18
Document Number: 93540
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
