VS-SD203N/R Series
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Vishay Semiconductors
Fast Recovery Diodes
(Stud Version) 200 A
FEATURES
• High power fast recovery diode series
• 1.0 μs to 2.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
DO-205AB (DO-9)
• Fast and soft reverse recovery
• Compression bonded encapsulation
• Stud version JEDEC
®
DO-205AB (DO-9)
• Maximum junction temperature 125 °C
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
200 A
DO-205AB (DO-9)
Single diode
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
50 Hz
I
FSM
60 Hz
50 Hz
60 Hz
V
RRM
t
rr
T
J
Range
Range
T
J
TEST CONDITIONS
VALUES
200
T
C
85
314
4990
5230
125
114
400 to 2500
1.0 to 2.0
25
°C
-40 to +125
V
μs
kA
2
s
A
UNITS
A
°C
I
2
t
Revision: 21-Nov-13
Document Number: 93170
1
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VS-SD203N/R Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-SD203N/R..S10
08
10
12
VS-SD203N/R..S15
14
16
VS-SD203N/R..S20
20
25
V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1000
1200
1400
1600
2000
2500
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
500
900
1100
1300
1500
1700
2100
2600
35
I
RRM
MAXIMUM
T
J
= 125 °C
mA
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 76 °C case temperature
t = 10 ms
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
200
85
314
4990
5230
4200
Sinusoidal half wave,
initial T
J
= T
J
maximum
4400
125
114
88
81
1250
1.00
1.47
1.10
0.46
1.65
V
mW
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 628 A, T
J
= 25 °C, t
p
= 400 μs square pulse
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
(μs)
1.0
1.5
2.0
750
25
- 30
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
V
r
(V)
TYPICAL VALUES
AT T
J
= 125 °C
t
rr
AT 25 % I
RRM
(μs)
2.4
2.9
3.2
Q
rr
(μC)
52
90
107
I
rr
(A)
33
44
46
I
FM
t
rr
t
Q
rr
I
RM(REC)
S10
S15
S20
dir
dt
Revision: 21-Nov-13
Document Number: 93170
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD203N/R Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque ± 10 %
Approximate weight
Case style
See dimensions (link at the end of datasheet)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
Lubricated threads
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.115
K/W
0.08
31
24.5
250
Nm
g
UNITS
°C
DO-205AB (DO-9)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.010
0.013
0.017
0.025
0.044
RECTANGULAR CONDUCTION
0.008
0.014
0.019
0.027
0.044
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
130
120
110
Maximum Allowable Case Temperature (°C)
SD203N/R Series
R
thJC
(DC) = 0.115 K/W
130
120
110
Conduction Period
100
90
80
70
0
50
100
150
200
250
300
350
SD203N/R Series
R
thJC
(DC) = 0.115 K/W
Conduction Angle
100
90
80
70
0
40
80
120
160
200
240
30°
60°
90°
120°
180°
30°
60°
90°
120°
180°
DC
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Revision: 21-Nov-13
Document Number: 93170
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For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-SD203N/R Series
www.vishay.com
Vishay Semiconductors
Peak Half
Sine
Wave Forward Current (A)
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
0.01
SD203N/R Series
Maximum Non Repetitive
Surge
Current
Versus Pulse Train Duration.
Initial T
J
= 125 °C
No Voltage Reapplied
Rated V
RRM
Reapplied
Maximum Average Forward Power Loss (W)
350
300
250
200
150
100
50
0
0
50
100
150
200
Conduction Angle
SD203N/R Series
T
J
= 125 °C
180°
120°
90°
60°
30°
RMS Limit
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Maximum Average Forward Power Loss (W)
550
500
450
400
350
300
250
200 RMS Limit
150
100
50
0
0
50
100
150
200
250
300
350
SD203N/R Series
T
J
= 125°C
Conduction Period
DC
180°
120°
90°
60°
30°
10 000
Instantaneous Forward Current (A)
T
J
= 25 °C
T
J
= 125 °C
1000
SD203N/R Series
100
0.5
2.5
4.5
6.5
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Peak Half
Sine
Wave Forward Current (A)
5000
4500
4000
3500
3000
2500
2000
1500
1000
1
Transient Thermal Impedance Z
thJC
(K/W)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following
Surge.
Initial T
J
= 125 °C
@ 60 Hz 0.0083
s
@ 50 Hz 0.0100
s
1
Steady State
Value:
R
thJC
= 0.115 K/W
(DC Operation)
0.1
0.01
SD203N/R Series
SD203N/R Series
10
100
0.001
0.001
0.01
0.1
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Revision: 21-Nov-13
Document Number: 93170
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For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD203N/R Series
www.vishay.com
Vishay Semiconductors
120
V
FP
100
I
T
J
= 125 °C
Forward Recovery (V)
80
60
T
J
= 25 °C
40
20
0
0
200
400
600
800
1000
1200
1400
1600
1800
2000
SD203N/R..S20 Series
Rate Off Fall Of Forward Current di/dt (A/μs)
Fig. 9 - Typical Forward Recovery Characteristics
Maximum Reverse Recovery Current - I
rr
(A)
Maximum Reverse Recovery Time - t
rr
(μs)
2.8
2.6
2.4
2.2
2
1.8
200 A
1.6
10
100
400 A
SD203N/R..S10 Series
T
J
= 125 °C, V
R
= 30 V
I
FM
= 750 A
Square
Pulse
100
90
80
70
60
50
40
30
20
20
30
40
50
60
70
80
90
100
SD203N/R..S10 Series
T
J
= 125 °C, V
R
= 30 V
200 A
I
FM
= 750 A
Square
Pulse
400 A
Rate Of Fall Of Forward Current - di
F
/dt (A/μs)
Fig. 10 - Recovery Time Characteristics
Rate Of Fall Of Forward Current - di
F
/dt (A/μs)
Fig. 12 - Recovery Current Characteristics
Maximum Reverse Recovery Charge - Q
rr
(μC)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
20
40
I
FM
= 750 A
Square
Pulse
Maximum Reverse Recovery Time - t
rr
(μs)
140
3.6
SD203N/R..S15 Series
T
J
= 125 °C, V
R
= 30 V
3.2
I
FM
= 750 A
2.8
Square
Pulse
400 A
200 A
2.4
400 A
2
200 A
1.6
10
100
SD203N/R..S10 Series
T
J
= 125 °C, V
R
= 30 V
60
80
100
Rate Of Fall Of Forward Current - di
F
/dt (A/μs)
Fig. 11 - Recovery Charge Characteristics
Rate Of Fall Of Forward Current - di
F
/dt (A/μs)
Fig. 13 - Recovery Time Characteristics
Revision: 21-Nov-13
Document Number: 93170
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
