VS-ST173S Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 175 A
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
TO-209AB (TO-93)
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
J
Package
Diode variation
175 A
1000 V, 1200 V
2.07 V
4680 A
4900 A
200 mA
-40 °C to 125 °C
TO-209AB (TO-93)
Single SCR
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
175
T
C
85
275
4680
4900
110
100
1000 to 1200
15 to 25
-40 to 125
kA
2
s
V
μs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
12
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
1100
1300
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
40
VS-ST173S
Revision: 11-Mar-14
Document Number: 94367
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-ST173S Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
500
450
330
170
50
V
DRM
50
60
47/0.22
320
290
190
80
790
810
760
510
50
V
DRM
-
550
540
490
300
4510
1970
1050
480
50
V
DRM
-
3310
1350
680
280
V
A/μs
85
47/0.22
°C
μF
A
85
60
47/0.22
85
60
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 75 °C case temperature
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
175
85
275
4680
4900
3940
Sinusoidal half wave,
initial T
J
= T
J
maximum
4120
110
100
77
71
1100
2.07
1.55
1.58
0.87
0.82
600
1000
m
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 600 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
minimum
Maximum turn-off time
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum,
I
TM
= 300 A, commutating dI/dt = 20 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt: See table in device code
VALUES
1000
1.1
15
25
μs
UNITS
A/μs
Revision: 11-Mar-14
Document Number: 94367
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST173S Series
www.vishay.com
Vishay Semiconductors
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
40
UNITS
V/μs
mA
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.105
0.04
31
(275)
24.5
(210)
280
UNITS
°C
K/W
N·m
(lbf · in)
g
TO-209AB (TO-93)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL
CONDUCTION
0.016
0.019
0.025
0.036
0.060
RECTANGULAR
CONDUCTION
0.012
0.020
0.027
0.037
0.060
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 94367
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST173S Series
www.vishay.com
Vishay Semiconductors
130
ST173S Series
R
thJC
(DC) = 0.105 K/W
130
ST173S Series
R
thJC
(DC) = 0.105 K/W
Maximum Allowable
Case Temperature (°C)
Maximum Allowable
Case Temperature (°C)
120
120
110
110
Ø
Conduction angle
100
30 °C
60 °C
90 °C
180 °C
120 °C
80
0
20
40
60
80
100 120 140 160 180
Ø
100
90
90°
80
70
0
40
80
120
30°
60°
120°
Conduction period
90
180°
DC
160
200
240
280
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
350
350
Maximum Average On-State
Power Loss (W)
Maximum Average On-State
Power Loss (W)
300
250
200
150
180°
120°
90°
60°
30°
0.
1
R
th
300
250
200
150
100
50
0
25
RMS limit
0.
16
0.2
K/W
K/
W
K/
W
SA
=
0.
08
W
K/
0.3
R
-
Δ
Ø
100
50
0
0
20
40
60
80
Conduction angle
ST173S Series
T
J
= 125 °C
100 120 140 160 180
K/W
0.4
K/W
0.5
K/W
0.8 K
/W
1.2 K/W
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
500
120°
400
180°
500
Maximum Average On-State
Power Loss (W)
Maximum Average
On-State Power Loss (W)
30°
60°
90°
DC
400
R
th
SA
=
300
RMS limit
Ø
0.1
0.
8
300
200
200
Conduction period
100
ST173S Series
T
J
= 125 °C
0
0
40
80
120
160
200
240
280
100
W
0.1
6K
0.2
/W
K/W
0.3
K/
0.4 K
W
0.5 K
/W
/W
0.8 K/W
1.2 K/W
K/
K/
W
-
Δ
R
0
25
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 11-Mar-14
Document Number: 94367
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST173S Series
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Vishay Semiconductors
1
Steady state value
R
thJC
= 0.105 K/W
(DC operation)
0.1
4500
At any rated load condition and with
rated V
RRM
applied following surge.
Peak Half Sine Wave
On-State Current (A)
4000
3500
3000
Transient Thermal
Impedance Z
thJC
(K/W)
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
0.01
ST173S Series
2500
ST173S Series
2000
1
10
100
0.001
0.001
0.01
0.1
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
5000
4500
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
250
ST173S Series
T
J
= 125 °C
Q
rr
- Maximum Reverse
Recovery Charge (µC)
Peak Half Sine Wave
On-State Current (A)
200
4000
3500
3000
2500
2000
1500
0.01
ST173S Series
A
00
=5
A
I
TM
00
=3
I
TM
0A
= 20
I
TM
I
TM
=
100 A
150
100
I
TM
= 50 A
50
0
0.1
1
0
20
40
60
80
100
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 9 - Reverse Recovered Current Characteristics
Instantaneous On-State Current (A)
10 000
ST173S Series
160
140
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
I
rr
- Maximum Reverse
Recovery Current (A)
120
100
80
60
40
20
1000
T
J
= 125 °C
T
J
= 25 °C
ST173S Series
T
J
= 125 °C
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0
20
40
60
80
100
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Revision: 11-Mar-14
Document Number: 94367
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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